Abstract:Semimetallic two-dimensional (2D) Dirac materials beyond graphene, especially 2D materials with robust Dirac points against the spin-orbit coupling (SOC), are still highly sought. Herein, we theoretically demonstrate the InBi monolayer as a long-sought 2D Dirac material whose exotic Dirac Fermionic states cannot be gapped out by SOC. The InBi monolayer with the litharge crystal structure possesses not only 4-fold band degeneracy, linear energy dispersion, and ultrahigh Fermi velocity in the order of 105 m/s, but also spontaneous ferroelasticity that can lead to the orthorhombic lattice deformation and semimetallic electronic structure. Specifically, the symmetry protected spin-orbit Dirac points in 2D InBi are located at the Brillouin Zone (BZ) boundary and near the Fermi level in energy. More importantly, with coexisting spin-orbit Dirac points and spontaneous ferroelasticity, the InBi monolayer exhibits an additional advantage for engineering Dirac Fermionic states by ferroelastic (FE) strain. Energy levels of Dirac points are strongly coupled to FE strain, and the semimetallic electronic structure of the InBi monolayer is also susceptible to the FE strain induced carrier self-doping effect. Depending on the strain orientation within the InBi monolayer, electron and hole Fermi pockets will develop along the two planar directions, leading to the characteristic transport coefficients (as evidenced by our transport simulations based on Boltzmann formalism) for future experimental detection. FE strain tunable Dirac Fermionic states together with the carrier self-doping effect will benefit future development of ultrathin electronic devices with both high carrier mobility and controllable charge conductivities.

Two-dimensional silicon bismotide (SiBi) monolayer with a honeycomb-like lattice: first-principles study of tuning the electronic properties

Theoretical Study of Two-Dimensional Boron Silicide from First-Principles

Tuning electronic and optical properties of free-standing Sn2Bi monolayer stabilized by hydrogenation

SiGe/AsSb bilayer heterostructures: structural characteristics and tunable electronic properties

Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

Binary Two-Dimensional Honeycomb Lattice with Strong Spin-Orbit Coupling and Electron-Hole Asymmetry.

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Tunable electronic properties in stanene and two dimensional silicon-carbide heterobilayer: A first principles investigation

InBi: A Ferroelastic Monolayer with Strain Tunable Spin-Orbit Dirac Points and Carrier Self-Doping Effect.

Density functional theory study of two-dimensional bismuth selenite: layer-dependent electronic, transport and optical properties with spin-orbit coupling.

Two-Dimensional Topological Insulator Al2SbBi with a Double-Layer Honeycomb Structure with Large Spin Splitting and Piezoelectricity for Spintronic Devices

How Can the Unstable Two-Dimensional Sn2Bi Be Experimentally Realized on Si(111)?

Large spin splitting and piezoelectricity in a two-dimensional topological insulator Al$_2$SbBi with double-layer honeycomb structure

Two-Dimensional Topological Insulator Al 2 SbBi with a Double-Layer Honeycomb Structure with Large Spin Splitting and Piezoelectricity for Spintronic Devices

Band engineering of XBi (X = Si, Ge, Sn, and Pb) single layers via strain and surface chemical-modulation

Ab Initio Study Of Electronic And Optical Behavior Of Two-Dimensional Silicon Carbide

Strain-tunable electronic anisotropy of AlSb double-layer honeycomb structure

A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)

Tuning transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ with biaxial strain

Properties of BSi$_6$N monolayers derived by first-principle computation

Thickness- and strain-tunable electronic structures of two-dimensional Bi2O2Se