Abstract:Over the last decades, the rapidly growing theoretical methods have revolutionized whole scientific paradigm, developed state-of-art analyses, and created substantial computational platforms through the huge support of outstanding mathematical algorithms. The self-consistent-charge density-functional based tight-binding (SCC-DFTB) scheme is one of them that offers versatile and efficient quantum mechanical calculations with some unique features compatible especially to the crystalline solid even at low computational resources. Its effective parametrizations and computational implementations under the Gaussian standardized interface as an "External program" via the users' script (Gaussian- External methodology; GEM) has added an additional value because of which various in-built high-level Gaussian computations are directly accessible. Herewith, the Gaussian offered geometry optimization algorithms and convergence criteria plus the ModRedundant type relaxed potential energy surface (PES) scanning techniques are assessed through the GEM, and characterized the crystal structures with concerned molecular energetics and PES of the experimentally synthesized 1,4-bis (trimethylsilyl) benzene (1,4-BTMSB) compound; a potential precursor for the high quality Silicon Carbide (β-SiC) coating particles, and an ideal "Internal Standard" for the quantitative spectroscopic analyses. The general results reveal that the 1,4- BTMSB molecules in its unit-cell and crystal lattice experience significant non-bonding interactions that induces them to attain the definite molecular geometry with recognizable ring, angle, torsional, and steric strains. The quantitative analyses of its PES depict that the phenylene ring has to overcome multiple yet unidentical energy barriers with the tallest Ea1= 5.3 kcal/mol in order to undergo internal 2π angular rotation around the 1,4-(C-Si) axes. And, exhibiting such type internal rotation of its phenylene ring is energetically highly probable as this compound is widely employed in coating high temperature reactors, and in quantizing analyte in high energy run spectroscopic facilities. The same quantification is referred here in order to underscore the significance of adopting perfectly closed topological molecular architectures while designing/synthesizing amphidynamic type crystalline free molecular gyrotops and their prototypes.

Theoretical Study of Two-Dimensional Boron Silicide from First-Principles

Exploration of structures of two-dimensional boron-silicon compounds with sp2 silicon

Hyperhoneycomb Boron Nitride With Anisotropic Mechanical, Electronic, And Optical Properties

Two-dimensional Antiferromagnetic Boron Form First Principles

Different Roles of a Boron Substitute for Carbon and Silicon in Β-Sic

High temperature stability, metallic character and bonding of the Si2BN planar structure

Low-symmetry two-dimensional BNP 2 and C 2 SiS structures with high and anisotropic carrier mobilities

Structural Characteristics and Quantum Chemistry Calculation of Si-Doped Boron Carbides

Properties of BSi$_6$N monolayers derived by first-principle computation

First-principles study of the electron and phonon transport properties in monolayer boron monosulfide

New stable two dimensional silicon carbide nanosheets

Two-dimensional silicon bismotide (SiBi) monolayer with a honeycomb-like lattice: first-principles study of tuning the electronic properties

Structural, Vibrational and Electronic Properties of Single Layer Hexagonal Crystals of Groups IV and V

Theoretical dissection of superconductivity in two-dimensional honeycomb borophene oxide B2O crystal with a high stability

Characterization of Silicon Carbide Biphenylene Network through G0W0-BSE Calculations

Two-dimensional Boron Monosulfides: Semiconducting and Metallic Polymorphs

Icosahedral silicon boride: A potential hybrid photovoltaic-thermoelectric for energy harvesting

Bulk structure of Si2BN predicted by computational approaches

First Principle Studies on the Stability and Electronic Structures of BeSiN2 and MgSiN2

Theoretical Investigations of the Crystal Structures and Molecular Energetics of High Quality Silicon Carbide (β-SiC) Precursor Compound 1,4-bis(trimethylsilyl)benzene

Phonon and electronic properties of semiconducting silicon nitride bilayers