Bulk structure of Si2BN predicted by computational approaches

Jiawen Wang,Shangqian Chen,Yingke Yang,Yi Yu,Huilong Dong,Youyong Li
DOI: https://doi.org/10.1016/j.diamond.2022.109530
IF: 3.806
2022-12-01
Diamond and Related Materials
Abstract:Recently, the theoretically predicted single-layer silicon boron nitride (Si2BN) has gained wide scientific interests. However, there still lack of studies on its bulk counterpart. In this work, we computationally predicted the bulk structures of Si2BN by combining particle swarm optimization (PSO) algorithm with first-principles calculations. For the PSO screened structures, we confirmed that the α-phase (α-Si2BN) is the most probable structure of bulk Si2BN, by evaluating from crystal symmetry, average atomic formation enthalpy and phonon dispersion spectrum. The electronic band structure of α-Si2BN indicates that it's semiconducting with an ultra-narrow indirect band gap (0.02 eV). Moreover, investigations on mechanical and thermal properties reveal that the α-Si2BN exhibits considerable hardness, ultra-high Debye temperature (1001K) and ultra-high melting point (2600 K), which holds great potential as high-temperature resistant material.
materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
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