Quantum Mechanical Effect on Trigate Junctionless FET for Fast Switching Application

M. Prasad,U. B. Mahadevaswamy

DOI: https://doi.org/10.1007/s11277-020-07939-2

IF: 2.017

2020-11-24

Wireless Personal Communications

Abstract:In this study, Trigate Junctionless FET device has been explored for its analog performance. The anolog and RF parameters for device performance like trans-conductance (gm), output conductance (gd), intrinsic gain (Av) and cut-off frequency (ft) are evaluated using visual TCAD tool. Simulation result reveals that a very low capacitance value (in the order of 10-19\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$10^-19$$\end{document}) which minimises ON state delay and making the device suitable for fast switching applications. The AC analysis of device demonstrates quite high cut off frequency of 2.44 GHz and a remarkable transconductance (Gm) of 0.154 μ\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$\mu$$\end{document}S. Furthermore, a novel CMOS Inverter has been designed using TGJLFET device structure in NMOS and PMOS configuration. The DC and transient response of the same has been studied extensively.

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