Carrier‐selective contacts using metal compounds for crystalline silicon solar cells

Jesus Ibarra Michel,Julie Dréon,Mathieu Boccard,James Bullock,Bart Macco

DOI: https://doi.org/10.1002/pip.3552

2022-03-16

Progress in Photovoltaics: Research and Applications

Abstract:Progress in Photovoltaics: Research and Applications, EarlyView.

What problem does this paper attempt to address?

Carrier-selective contacts for Si solar cells

F. Feldmann,M. Simon,M. Bivour,C. Reichel,M. Hermle,S. W. Glunz

DOI: https://doi.org/10.1063/1.4875904

IF: 4

2014-05-05

Applied Physics Letters

Abstract:Carrier-selective contacts (i.e., minority carrier mirrors) are one of the last remaining obstacles to approaching the theoretical efficiency limit of silicon solar cells. In the 1980s, it was already demonstrated that n-type polysilicon and semi-insulating polycrystalline silicon emitters form carrier-selective emitters which enabled open-circuit voltages (Voc) of up to 720 mV. Albeit promising, to date a polysilicon emitter solar cell having a high fill factor (FF) has not been demonstrated yet. In this work, we report a polysilicon emitter related solar cell achieving both a high Voc = 694 mV and FF = 81%. The passivation mechanism of these so-called tunnel oxide passivated contacts will be outlined and the impact of TCO (transparent conductive oxide) deposition on the injection-dependent lifetime characteristic of the emitter as well as its implications on FF will be discussed. Finally, possible transport paths across the tunnel oxide barrier will be discussed and it will be shown that the passivating oxide layer does not lead to a relevant resistive loss and thus does not limit the solar cell's carrier transport. Contrary to amorphous silicon-based heterojunction solar cells, this structure also shows a good thermal stability and, thus, could be a very appealing option for next generation high-efficiency silicon solar cells.

physics, applied
Electron‐Selective Strontium Oxide Contact for Crystalline Silicon Solar Cells with High Fill Factor

Chunfang Xing,Wenbo Gu,Kun Gao,Beibei Shao,Conghui Jiang,Guilin Bai,Dacheng Xu,Xinyu Wang,Kun Li,Zheheng Song,Zhaojun Su,Jie Mao,Xinyu Zhang,Peiting Zheng,Wei Zhang,Xiaohong Zhang,Yusheng Wang,Xinbo Yang,Baoquan Sun

DOI: https://doi.org/10.1002/solr.202201100

IF: 9.1726

2023-02-24

Solar RRL

Abstract:Extensive efforts have been made to develop wide‐bandgap metal compound‐based carrier‐selective contacts to improve the performance of crystalline silicon (c‐Si) solar cells, by mitigating the deleterious effects of metal‐Si contact directly. Herein, thermally‐evaporated wide‐bandgap strontium oxide (SrOx) is exploited as an electron‐selective contact for c‐Si solar cells. Benefiting from a lower work function (3.1 eV) of SrOx, a strong downward band bending is achieved at the n‐type c‐Si/SrOx interface, enabling the electron‐selective transport characteristic. Thin SrOx films simultaneously provide moderate surface passivation after annealing and enable a low contact resistivity on c‐Si surfaces. By the implementation of a single‐dielectric‐layer SrOx‐based rear contact, a champion power conversion efficiency of 20.0% is realized on the n‐type c‐Si solar cell featuring an intriguing fill factor of 82.8%. Moreover, electron‐selective SrOx contact is demonstrated to show high thermal stability up to 500 °C. The SrOx layer formed by a facile thermal evaporation process presents a unique opportunity to develop highly efficient and low‐cost c‐Si solar cells. This article is protected by copyright. All rights reserved.

energy & fuels,materials science, multidisciplinary
Dopant‐Free and Carrier‐Selective Heterocontacts for Silicon Solar Cells: Recent Advances and Perspectives

Pingqi Gao,Zhenhai Yang,Jian He,Jing Yu,Peipei Liu,Juye Zhu,Ziyi Ge,Jichun Ye

DOI: https://doi.org/10.1002/advs.201700547

IF: 15.1

2017-12-04

Advanced Science

Abstract:By combining the most successful heterojunctions (HJ) with interdigitated back contacts, crystalline silicon (c-Si) solar cells (SCs) have recently demonstrated a record efficiency of 26.6%. However, such SCs still introduce optical/electrical losses and technological issues due to parasitic absorption/Auger recombination inherent to the doped films and the complex process of integrating discrete p+- and n+-HJ contacts. These issues have motivated the search for alternative new functional materials and simplified deposition technologies, whereby carrier-selective contacts (CSCs) can be formed directly with c-Si substrates, and thereafter form IBC cells, via a dopant-free method. Screening and modifying CSC materials in a wider context is beneficial for building dopant-free HJ contacts with better performance, shedding new light on the relatively mature Si photovoltaic field. In this review, a significant number of achievements in two representative dopant-free hole-selective CSCs, i.e., poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate)/Si and transition metal oxides/Si, have been systemically presented and surveyed. The focus herein is on the latest advances in hole-selective materials modification, interfacial passivation, contact resistivity, light-trapping structure and device architecture design, etc. By analyzing the structure-property relationships of hole-selective materials and assessing their electrical transport properties, promising functional materials as well as important design concepts for such CSCs toward high-performance SCs have been highlighted.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Design Rule of Electron- and Hole-Selective Contacts for Polycrystalline Silicon-Based Passivating Contact Solar Cells

Sung-In Mo,Sungjin Choi,Jeong-Ho An,Bo-Jong Kim,Kwan Hong Min,Sungeun Park,Ji-Eun Hong,Soong Ju Oh,Hee-Eun Song,Joon-Ho Oh,Ka-Hyun Kim

DOI: https://doi.org/10.1021/acsami.3c08957

2023-10-11

Abstract:A crystalline silicon (c-Si) solar cell with a polycrystalline silicon/SiOx (poly-Si/SiOx) structure, incorporating both electron and hole contacts, is an attractive choice for achieving ideal carrier selectivity and serving as a fundamental component in high-efficiency perovskite/Si tandem and interdigitated back-contact solar cells. However, our understanding of the carrier transport mechanism of hole contacts remains limited owing to insufficient studies dedicated to its investigation. There is also a lack of comparative studies on the poly-Si/SiOx electron and hole contacts for ideal carrier-selective solar cells. Therefore, this study aims to address these knowledge gaps by exploring the relationship among microstructural evolution, dopant in-diffusion, and the resulting carrier transport mechanism in both the electron and hole contacts of poly-Si/SiOx solar cells. Electron (n+ poly-Si/SiOx/substrate)- and hole (p+ poly-Si/SiOx/substrate)-selective passivating contacts are subjected to thermal annealing. Changes in the passivation properties and carrier transport mechanisms of these contacts are investigated during thermal annealing at various temperatures. Notably, the results demonstrate that the passivation properties and carrier transport mechanisms are strongly influenced by the microstructural evolution of the poly-Si/SiOx layer stack and dopant in-diffusion. Furthermore, electron and hole contacts exhibit common behaviors regarding microstructural evolution and dopant in-diffusion. However, the hole contacts exhibit relatively inferior electrical properties overall, mainly because both the SiOx interface and the p+ poly-Si are found to be highly defective. Moreover, boron in the hole contacts diffuses deeper than phosphorus in the electron contacts, resulting in deteriorated carrier collection. The experimental results are also supported by device simulation. Based on these findings, design rules are suggested for both electron and hole contacts, such as using thicker SiOx and/or annealing the solar cell at a temperature not exceeding the critical annealing temperature of the hole contacts.
Conductive Hole-Selective Passivating Contacts for Crystalline Silicon Solar Cells

Lu Wan,Cuili Zhang,Kunpeng Ge,Xueliang Yang,Feng Li,Wensheng Yan,Zhuo Xu,Lin Yang,Ying Xu,Dengyuan Song,Jianhui Chen

DOI: https://doi.org/10.1002/aenm.201903851

IF: 27.8

2020-01-01

Advanced Energy Materials

Abstract:Defect state passivation and conductivity of materials are always in opposition; thus, it is unlikely for one material to possess both excellent carrier transport and defect state passivation simultaneously. As a result, the use of partial passivation and local contact strategies are required for silicon solar cells, which leads to fabrication processes with technical complexities. Thus, one material that possesses both a good passivation and conductivity is highly desirable in silicon photovoltaic (PV) cells. In this work, a passivation-conductivity phase-like diagram is presented and a conductive-passivating-carrier-selective contact is achieved using PEDOT:Nafion composite thin films. A power conversion efficiency of 18.8% is reported for an industrial multicrystalline silicon solar cell with a back PEDOT:Nafion contact, demonstrating a solution-processed organic passivating contact concept. This concept has the potential advantages of omitting the use of conventional dielectric passivation materials deposited by costly high-vacuum equipment, energy-intensive high-temperature processes, and complex laser opening steps. This work also contributes an effective back-surface field scheme and a new hole-selective contact for p-type and n-type silicon solar cells, respectively, both for research purposes and as a low-cost surface engineering strategy for future Si-based PV technologies.
Progress and Future Prospects of Wide‐Bandgap Metal‐Compound‐Based Passivating Contacts for Silicon Solar Cells

Kun Gao,Qunyu Bi,Xinyu Wang,Wenzhu Liu,Chunfang Xing,Kun Li,Dacheng Xu,Zhaojun Su,Cheng Zhang,Jian Yu,Dongdong Li,Baoquan Sun,James Bullock,Xiaohong Zhang,Xinbo Yang

DOI: https://doi.org/10.1002/adma.202200344

IF: 29.4

2022-05-09

Advanced Materials

Abstract:Given the increasing interest in searching for high‐quality low‐cost passivating contacts for c‐Si solar cells, the fundamentals and development status of wide‐bandgap metal‐compound‐based passivating contacts are reviewed and the challenges and potential solutions in developing highly transparent passivating contacts with excellent carrier selectivity are discussed. Based on in‐depth data analysis and simulations, the improvement strategies for metal‐compound‐based passivating contacts design and device integration are pointed out. Advanced doped‐silicon‐layer‐based passivating contacts have boosted the power conversion efficiency (PCE) of single‐junction crystalline silicon (c‐Si) solar cells to over 26%. However, the inevitable parasitic light absorption of the doped silicon layers impedes further PCE improvement. To this end, alternative passivating contacts based on wide‐bandgap metal compounds (so‐called dopant‐free passivating contacts (DFPCs)) have attracted great attention, thanks to their potential merits in terms of parasitic absorption loss, ease‐of‐deposition, and cost. Intensive research activity has surrounded this topic with significant progress made in recent years. Various electron‐selective and hole‐selective contacts based on metal compounds have been successfully developed, and a champion PCE of 23.5% has been achieved for a c‐Si solar cell with a MoOx‐based hole‐selective contact. In this work, the fundamentals and development status of DFPCs are reviewed and the challenges and potential solutions for enhancing the carrier selectivity of DFPCs are discussed. Based on comprehensive and in‐depth analysis and simulations, the improvement strategies and future prospects for DFPCs design and device implementation are pointed out. By tuning the carrier concentration of the metal compound and the work function of the capping transparent electrode, high PCEs over 26% can be achieved for c‐Si solar cells with DFPCs.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts

Massimo Nicolai,Mauro Zanuccoli,Frank Feldmann,Martin Hermle,Claudio Fiegna

DOI: https://doi.org/10.1109/jphotov.2017.2775142

2018-01-01

IEEE Journal of Photovoltaics

Abstract:Passivating contacts are a promising technology to enhance silicon solar cells conversion efficiency. In this paper, we present a simulation study carried out by using physical models calibrated on the basis of experimental data, aimed at understanding the electrical properties of front emitter silicon solar cells featuring top/rear poly-Si/SiOx selective contacts. Furthermore, we propose a rear junction (RJ) design that desensitizes the fill factor to top electrode resistivity. According to our simulations, the RJ scheme addresses the possibility to omit the transparent conductive oxide allowing promising conversion efficiency of silicon solar cells with carrier-selective contacts. In addition, the influence of the surface recombination velocity at the c-Si/SiOx interfaces and of the effective tunneling masses is investigated.

energy & fuels,materials science, multidisciplinary,physics, applied
Temperature and Environmental Stable Titanium Carbide as Electron-Selective Heterocontact for Crystalline Silicon Solar Cells

Yang Ding,Zhiping Huang,Deyuan Wei,Jingwei Chen,Biao Sun,Chong Di,Jianming Wang,Kangping Zhang,Ying Xu,Guangsheng Fu

DOI: https://doi.org/10.1039/d3tc01388j

IF: 6.4

2023-06-30

Journal of Materials Chemistry C

Abstract:Carrier selective transport material has been extensively investigated as an important means of increasing carrier collection rates. In this study, magnetron RF sputtered titanium carbide (TiC x ) is proposed as a novel electron-selective contact material that provides excellent electron transport and hole blocking properties on n-type Si surfaces due to small conduction band shift and large valence band shift. The prepared ~4 nm TiC x /n-Si heterostructure contact achieves a contact resistivity of 4.24 mΩ·cm 2 , which is lower than most reported structures. Crystalline silicon solar cells with a simple full-area electron-selective TiC x rear contact achieves a power conversion efficiency (PCE) of 17.37%, which is attributed to a significant increase in fill factor (FF) and open-circuit voltage (Voc). At the same time, the TiC x films demonstrate good environmental and temperature stability in damp heat tests, light soaking tests, HAST tests and high temperature annealing tests up to 770 °C. This work opens up the possibility of using metal carbides as an electron transport layer for photovoltaic devices and validates their suitability for existing large-scale production processes for high-efficiency silicon solar cells.

materials science, multidisciplinary,physics, applied
Crystalline Silicon Heterojunction Solar Cells with Metal Oxide Window Layers

Erenn Ore,Gehan Amaratunga

DOI: https://doi.org/10.1109/pvsc40753.2019.8981326

2019-01-01

Abstract:For the crystalline silicon (c-Si) heterojunction (HJ) solar cell with the conventional structure, the parasitic absorbance in the window contact layer (WCL) of p-type doped thin film silicon or its alloy (pDTF-Si/A) limits the amount of the short circuit current density (J SC ) generated. In this work, pDTFSi/A is replaced with a transition metal oxide (TMO) of MoO X , WO X , TiO X , NiO X , Cu 2 O X . Due to the wide band gaps of TMO materials, the c-Si HJ cells with TMO WCLs have higher J SC than the conventional c-Si HJ cell under AM1.5 irradiation. The values of the excess charge carrier lifetime and the implied open circuit voltage indicate that WO X provides the best passification for c-Si.
Laser Crystallization and Dopant Activation for a-Si:H Film in Carrier-Selective Contacts for Silicon Solar cells

George C. Wilkes,Ajay D. Upadhyaya,Ajeet Rohatgi,Mool C. Gupta

DOI: https://doi.org/10.1109/pvsc40753.2019.8981156

2019-06-01

Abstract:Herein we present a pulsed laser processing method for crystallization and dopant activation of a highly n-doped amorphous silicon (a-Si:H) carrier selective layer for high conductivity, high carrier lifetime, low emitter saturation current and limited surface layer heating as opposed to high temperature furnace annealing induced heating of the bulk Si wafer. We demonstrate increased crystallinity and reduced layer resistivity, without impacting surface passivation quality. Additionally, we examine the role of forming gas annealing (FGA) on further improving the passivation of laser-processed polysilicon layers to achieve a <2 mΩ•cm film resistivity, 2.1 ms effective carrier lifetime, 685 mV implied open-circuit voltage (iVOC), and 27 fA/cm2 recombination current density (J0) with the potential for further passivation improvement via laser process optimization.
Passivating Contacts for Crystalline Silicon Solar Cells: An Overview of the Current Advances and Future Perspectives

Wei Li,Zhiyuan Xu,Yu Yan,Jiakai Zhou,Qian Huang,Shengzhi Xu,Xiaodan Zhang,Ying Zhao,Guofu Hou

DOI: https://doi.org/10.1002/aenm.202304338

IF: 27.8

2024-04-03

Advanced Energy Materials

Abstract:This work conducts a comprehensive and in‐depth study of the evolution of high‐efficiency c‐Si solar cells, adopting a historical perspective to explore the advancements in passivation contact techniques and materials to state‐of‐the‐art cell designs. Besides, this work identifies existing challenges and proposes insights into future pathways for c‐Si solar cells. Solar photovoltaics (PV) are poised to be crucial in limiting global warming by replacing traditional fossil fuel generation. Within the PV community, crystalline silicon (c‐Si) solar cells currently dominate, having made significant efficiency breakthroughs in recent years. These advancements are primarily due to innovations in solar cell technology, particularly in developing passivating contact schemes. As such, this review article comprehensively examines the evolution of high‐efficiency c‐Si solar cells, adopting a historical perspective to investigate the advancements in passivation contact techniques and materials to state‐of‐the‐art cell designs. Additionally, this work deeply studies the recent advances and critical design principles underlying each developed passivation scheme. Eventually, this work identifies existing challenges and proposes insights into future directions for c‐Si solar cells through diverse passivating contact strategies.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Application of carrier-selective contacts in c-Si front/back contacted (FBC) and IBC solar cells with different thermal budget

Gianluca Limodio,Guangtao Yang,Paul Procel,Arthur Weeber,Olindo Isabella,Miro Zeman

DOI: https://doi.org/10.1109/pvsc.2018.8548142

2018-06-01

Abstract:This paper shows the application of carrier-selective passivating contacts (CSPCs) in c-Si front-back contacted (FBC) and interdigitated back-contacted (IBC) solar cells with different thermal budgets. From lifetime analysis of our poly-Si and a-Si:H CSPCs, three FBC and one IBC architectures are devised to progressively increase efficiency (ç) and achieve record short-circuit current density (JSC): (i) a poly-poly cell ($\eta $ = 19.6%); (ii) a selective emitter structure known as PeRFeCT (Passivated Emitter Rear and Front ConTacts, $\eta $ = 20.0%); (iii) a so-called hybrid solar cell with poly-Si and a-Si:H CSPCs at rear and front, respectively ($\eta $ = 21.0%); and (iv) an IBC solar cell with poly-Si CSPC ($\eta $ = 23.0%, JSC = 42.2 mA/cm2).
Simulation of p-type c-Si solar cells with metal oxides as carrier-selective contacts

Xiaoning Liu,Qian Huang,Xiufang Yang,Jiakai Zhou,Chengchao Ren,Xianglin Su,Zhiyuan Xu,Ying Zhao,Guofu Hou

DOI: https://doi.org/10.1016/j.solener.2022.05.030

IF: 7.188

2022-07-01

Solar Energy

Abstract:The silicon heterojunction (SHJ) solar cell has been one of the most promising candidates for the photovoltaic (PV) market because of its high efficiency, simple structure and mature fabrication process. By replacing the p-type and n-type doped silicon layers with metal oxides, the so-called dopant-free asymmetric heterocontacts (DASH) solar cell can be formed, which will be easy to achieve full-surface passivation and selective carrier transport. In this study, the AFORS-HET software was used to simulate the Ag grid/ITO/ZnO/c-Si(p)/MoOX/Ag device configuration, in which ZnO was used as electron-selective contact and MoOX as hole-selective contact. The influence of work function (WF) of MoOX layer, thickness and doping concentration of ZnO layer, doping concentration of crystalline silicon (c-Si) layer on the device performance were investigated. The simulation results demonstrated that the application of ZnO layer and MoOX layer as carrier-selective layers can significantly increase the open-circuit voltage (VOC) and short-circuit current density (JSC). After a series of optimization, the simulated champion conversion efficiency (Eff) can reach 27.64 %, which will provide meaningful information for subsequent experiment research of DASH solar cells.

energy & fuels
Atomic Layer Deposition of Vanadium Oxide as Hole‐Selective Contact for Crystalline Silicon Solar Cells

Xinbo Yang,Hang Xu,Wenzhu Liu,Qunyu Bi,Lujia Xu,Jingxuan Kang,Mohamed N. Hedhili,Baoquan Sun,Xiaohong Zhang,Stefaan De Wolf

DOI: https://doi.org/10.1002/aelm.202000467

IF: 6.2

2020-07-15

Advanced Electronic Materials

Abstract:High carrier recombination loss at the contact regions has become the dominant factor limiting the power conversion efficiency (PCE) of crystalline silicon (c‐Si) solar cells. Dopant‐free carrier‐selective contacts are being intensively developed to overcome this challenge. In this work, vanadium oxide (VOx ) deposited by atomic layer deposition (ALD) is investigated and optimized as a potential hole‐selective contact for c‐Si solar cells. ALD VOx films are demonstrated to simultaneously offer a good surface passivation and an acceptable contact resistivity (ρc) on c‐Si, achieving a best contact recombination current density (J 0) of ≈40 fA cm−2 and a minimum ρc of ≈95 mΩ.cm2. Combined with a high work function of 6.0 eV, ALD VOx films are proven to be an effective hole‐selective contact on c‐Si. By the implementation of hole‐selective VOx contact, the state‐of‐the‐art PCE of 21.6% on n‐type c‐Si solar cells with a high stability is demonstarted. These results demonstrate the high potential of ALD VOx as a stable hole‐transport layer for photovoltaic devices, with applications beyond c‐Si, such as perovskite and organic solar cells.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer

Le Li,Guanlin Du,Xi Zhou,Yinyue Lin,Yuanwei Jiang,Xingyu Gao,Linfeng Lu,Gang Li,Wei Zhang,Qiang Feng,Jilei Wang,Liyou Yang,Dongdong Li

DOI: https://doi.org/10.1021/acsami.1c08258

2021-06-14

Abstract:Passivating contacts that simultaneously promote carrier selectivity and suppress surface recombination are considered as a promising trend in the crystalline silicon (c-Si) photovoltaic industry. In this work, efficient p-type c-Si (p-Si) solar cells with cuprous oxide (Cu2O) hole-selective contacts are demonstrated. The direct p-Si/Cu2O contact leads to a substoichiometric SiOx interlayer and diffusion of Cu into the silicon substrate, which would generate a deep-level impurity behaving as carrier recombination centers. An Al2O3 layer is subsequently employed at the p-Si/Cu2O interface, which not only serves as a passivating and tunneling layer but also suppresses the redox reaction and Cu diffusion at the Si/Cu2O interface. In conjunction with the high work function of Au and the superior optical property of Ag, a power conversion efficiency up to 19.71% is achieved with a p-Si/Al2O3/Cu2O/Au/Ag rear contact. This work provides a strategy for reducing interfacial defects and lowering energy barrier height in passivating contact solar cells.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c08258?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c08258</a>.Experimental details, minority carrier lifetime, XRR spectra, UPS spectra, refractive index data, and Tauc plot (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c08258/suppl_file/am1c08258_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Gizem Nogay,Josua Stuckelberger,Philippe Wyss,Esteban Rucavado,Christophe Allebé,Takashi Koida,Monica Morales-Masis,Matthieu Despeisse,Franz-Josef Haug,Philipp Löper,Christophe Ballif

DOI: https://doi.org/10.1016/j.solmat.2017.06.039

IF: 6.9

2017-12-01

Solar Energy Materials and Solar Cells

Abstract:We present a detailed optimization of a hole selective rear contact for p–type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based on a layer stack comprising a chemically grown thin silicon oxide, an intrinsic silicon interlayer, and an in-situ boron-doped non-stoichiometric silicon-rich silicon-carbide layer on top. After deposition, the structure is annealed at 775–900°C to diffuse dopant impurities to the c-Si wafer and a hydrogenation step is carried out. It is shown that hydrogenation is essential to obtain high quality surface passivation. In particular, we compare the effect of annealing in forming gas and annealing with a silicon-nitride overlayer as hydrogen source. We present a systematic optimization of the hole-selective contact, for which we varied the doping concentration, annealing parameters and report the implied open circuit voltage (iVoc) and combined specific contact resistivity (ρc). It is observed that for highly doped layers the optimum annealing temperature for high quality surface passivation is 800°C while for lowly doped layers the optimum annealing condition shifts to 850°C. Excellent surface passivation and efficient current transport is evidenced by an iVoc value of 718mV which corresponds to a saturation current density (J0) of 11.5fA/cm2 and a ρc of 17mΩcm2 on p−type wafers. Moreover, the evolution of the boron diffusion profiles with different annealing conditions is investigated. Finally, we demonstrate proof-of-concept p−type hybrid solar cells employing the full-area hole-selective rear contact presented here and standard heterojunction front electron contact. The excellent efficiency potential of our passivating rear contact is highlighted by conversion efficiencies up to of 21.9%, enabling Voc of 708mV, FF of 79.9% and Jsc of 38.7mA/cm2.

materials science, multidisciplinary,physics, applied,energy & fuels
Tunable work function of molybdenum oxynitride for electron-selective contact in crystalline silicon solar cells

Zeyu Gu,Le Li,Guanlin Du,Yinyue Lin,Linfeng Lu,Jia Chen,Zheren Du,Ronglin Liu,Quan Cheng,Kun Gao,Xinbo Yang,Dongdong Li

DOI: https://doi.org/10.1063/5.0086801

IF: 4

2022-03-21

Applied Physics Letters

Abstract:Dopant-free carrier-selective contacts based on metal compounds have attracted considerable attention for high-efficiency crystalline silicon solar cells. In this work, the feasibility of using molybdenum oxynitride (MoO x N y ) as an electron-selective contact layer in n-type crystalline silicon ( n-Si) solar cells has been demonstrated. With the increase in the N 2 :Ar ratio during the sputtering process, the work function of a MoO x N y film decreases from 4.57 to 4.26 eV, which is advantageous for the MoO x N y film to be an electron transport layer. An efficiency of 18.0% has been achieved in n-Si based solar cells using a full-area MoO x N y contact for electron extraction, featuring a high fill factor of 84.6%.

physics, applied
Differently shaped Ag crystallites and four current transport paths at sintered Ag/Si interface of crystalline silicon solar cells

Bowen Feng,Yaoping Liu,Wei Chen,Guoguang Xing,Xingqian Chen,Xiaolong Du

DOI: https://doi.org/10.1016/j.solmat.2023.112381

IF: 6.9

2023-05-17

Solar Energy Materials and Solar Cells

Abstract:The comprehensive understanding of the Ohmic contact mechanism on the front metalization is highly desirable for further improvement of crystalline silicon solar cells performance. However, there are still controversial views about current transport paths between silver electrode and silicon emitter. To clarify this significant issue, we applied the selective acid etching (AE) process and the method of mechanical stripping process to prepare proper samples for direct observation of the Ag/Si contact interface. It is revealed that four kinds of Ag crystallites are grown with variant shapes and sizes on the pyramid tips, {111} planes, edges and tiny bumps at valleys of the textured Si surface resulting from anisotropic etching of Si emitter by the flowing molten glass frit during firing and the consequent epitaxially growth of Ag on the etching pits during cooling. All these Ag crystallites are in direct contact with Si emitter, serving as the most important contact points on the Si side. Meanwhile, three kinds of spherical Ag particles are formed in the resolidified glass frit during cooling which are crucial tunneling paths, conducting between glass-covered Ag crystallites on silicon and Ag bulk above. As a whole, four current transport paths are suggested mainly via Ag crystallites, Ag particles or both. In addition, the four electron transport paths are further confirmed by the Kelvin probe force microscopy characterization. The clarification and detailed understanding of all current transport paths are key points to design better silver paste and sintering process, and hence to improve the solar cell performance.

materials science, multidisciplinary,physics, applied,energy & fuels
Ultrathin transparent metal capping layer on metal oxide carrier-selective contacts for Si solar cells

Yonghwan Lee,Bikesh Gupta,Hark Hoe Tan,Chennupati Jagadish,Jihun Oh,Siva Karuturi

DOI: https://doi.org/10.1140/epjs/s11734-022-00544-3

2022-03-26

The European Physical Journal Special Topics

Abstract:Carrier-selective contacts using metal oxide thin films have been proposed and successfully demonstrated for dopant-free Si solar cells. However, the electronic properties of several metal oxide thin films such as <svg xmlns:xlink="http://www.w3.org/1999/xlink" width="6.202ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 2670.2 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMAIN-4D"></use> <use xlink:href="#MJMAIN-6F" x="917" y="0"></use> <use xlink:href="#MJMAIN-4F" x="1418" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMAIN-78" x="3106" y="-213"></use></g></svg> can deteriorate easily due to the modification of surface chemical state upon exposure to ambient air. Here, we report the use of an ultrathin Au capping layer on <svg xmlns:xlink="http://www.w3.org/1999/xlink" width="6.202ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 2670.2 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMAIN-4D"></use> <use xlink:href="#MJMAIN-6F" x="917" y="0"></use> <use xlink:href="#MJMAIN-4F" x="1418" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMAIN-78" x="3106" y="-213"></use></g></svg> to mitigate the undesired surface chemistry modification. In addition, the Au capping layer also functions as a transparent conducting electrode, thereby potentially allowing the replacement of transparent conductive oxides such as indium tin oxide. We further show that the power conversion efficiency of a simple Au/<svg xmlns:xlink="http://www.w3.org/1999/xlink" width="6.202ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 2670.2 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMAIN-4D"></use> <use xlink:href="#MJMAIN-6F" x="917" y="0"></use> <use xlink:href="#MJMAIN-4F" x="1418" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMAIN-78" x="3106" y="-213"></use></g></svg>/n-Si device increases from 0.53 to 6.43% with the incorporation of a grid type electrode at the front surface. Our results provide insights into the design of efficient solar cells incorporating carrier selective contacts without the need to use transparent conductive oxides.<svg xmlns="http://www.w3.org/2000/svg" style="display: none;"><defs id="MathJax_SVG_glyphs"><path stroke-width="1" id="MJMAIN-4D" d="M132 622Q125 629 121 631T105 634T62 637H29V683H135Q221 683 232 682T249 675Q250 674 354 398L458 124L562 398Q666 674 668 675Q671 681 683 682T781 683H887V637H854Q814 636 803 634T785 622V61Q791 51 802 49T854 46H887V0H876Q855 3 736 3Q605 3 596 0H585V46H618Q660 47 669 49T688 61V347Q688 424 688 461T688 546T688 613L687 632Q454 14 450 7Q446 1 430 1T410 7Q409 9 292 316L176 624V606Q175 588 175 543T175 463T175 356L176 86Q187 50 261 46H278V0H269Q254 3 154 3Q52 3 37 0H29V46H46Q78 48 98 56T122 69T132 86V622Z"></path><path stroke-width="1" id="MJMAIN-6F" d="M28 214Q28 309 93 378T250 448Q340 448 405 380T471 215Q471 120 407 55T250 -10Q153 -10 91 57T28 214ZM250 30Q372 30 372 193V225V250Q372 272 371 288T364 326T348 362T317 390T268 410Q263 411 252 411Q222 411 195 399Q152 377 139 338T126 246V226Q126 130 145 91Q177 30 250 30Z"></path><path stroke-width="1" id="MJMAIN-4F" d="M56 340Q56 423 86 494T164 610T270 680T388 705Q521 705 621 601T722 341Q722 260 693 191T617 75T510 4T388 -22T267 3T160 74T85 189T56 340ZM467 647Q426 665 388 665Q360 665 331 654T269 620T213 549T179 439Q174 411 174 354Q174 144 277 61Q327 20 385 20H389H391Q474 20 537 99Q603 188 603 354Q603 411 598 439Q577 592 467 647Z"></path><path stroke-width="1" id="MJMAIN-78" d="M201 0Q189 3 102 3Q26 3 17 0H11V46H25Q48 47 67 52T96 61T121 78T139 96T160 122T180 150L226 210L168 288Q159 301 149 315T133 336T122 351T113 363T107 370T100 376T94 379T88 381T80 383Q74 383 44 385H16V431H23Q59 429 126 429Q219 429 229 431H237V385Q201 381 201 369Q201 367 211 353T239 315T268 274L272 270L297 304Q329 345 329 358Q329 364 327 369T322 376T317 380T310 384L307 385H302V431H309Q324 428 408 428Q487 428 493 431H499V385H492Q443 385 411 368Q394 360 377 341T312 257L296 236L358 151Q424 61 429 57T446 50Q464 46 499 46H516V0H510H502Q494 1 482 1T457 2T432 2T414 3Q403 3 377 3T327 1L304 0H295V46H298Q309 46 320 51T331 63Q331 65 291 120L250 175Q249 174 219 133T185 88Q181 83 181 74Q181 63 188 55T206 46Q208 46 208 23V0H201Z"></path></defs></svg>
Carrier Selectivity and Passivation at the Group V elemental 2D Material--Si Interface of a PV Device

Gurudayal Behera,K. R. Balasubramaniam,Aftab Alam

2024-01-05

Abstract:This study investigates the interfacial characteristics relevant to photovoltaic (PV) devices of the Group--V elemental 2D layers with Si. The surface passivation and carrier selectivity of the interface between $\alpha$ and $\beta$ allotropes of arsenene, antimonene, and bismuthene monolayers with Si (100) and Si(111) were estimated \emph{via} first--principles calculations. Amongst the various interface configurations studied, all of the Si(111)--based slabs and only a couple of the Si(100)--based slabs are found to be stable. Bader charge analysis reveals that charge transfer from/to the Si slab to (As)/from (Sb and Bi) in the 2D layer occurs, indicating a strong interaction between atoms across the interface. Comparing within the various configurations of a particular charge (electron or hole) selective layer, the structural distortion of the Si slab is the lowest for $\alpha$--As/Si and $\beta$-Bi/Si. This translates as a lower surface density of states (DOS) in the band gap arising out of the Si slab when integrated with $\alpha$--arsenene and $\beta$--bismuthene, implying better surface passivation. All-in-all, our analysis suggests $\alpha$-As as the best candidate for a passivating electron selective layer, while $\beta$-Bi can be a promising candidate for a passivating hole selective layer.

Computational Physics,Materials Science

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Carrier Selectivity and Passivation at the Group V elemental 2D Material--Si Interface of a PV Device