Solution-Processed Copper (I) Iodide via Co-Doping for Enhanced Hole Selective Contacts in P-Type Crystalline Silicon Solar Cells
Wang Fu,Wuqi Liu,Yaju Wei,Dan Liu,Songyu Li,Di Zhao,Xiaoping Wu,Lingbo Xu,Ping Lin,Can Cui,Xuegong Yu,Peng Wang
DOI: https://doi.org/10.1039/d3tc02988c
IF: 6.4
2023-12-13
Journal of Materials Chemistry C
Abstract:To address the contact recombination, carrier-selective contacts (CSCs) have played a key role in crystalline silicon (c-Si) solar cells for higher photoelectrical conversion efficiency (PCE). Recently, wide-bandgap metal compound materials with extreme work functions or suitable energy band alignment have drawn considerable interest for CSC materials. Among them, cuprous iodide (CuI) is a very promising hole-selective layer, however, very little research has been conducted for c-Si solar cells. In this work, we have demonstrated that solution-processed CuI films act as effective full-area hole-selective contact layers for p-Si solar cells. Moreover, iodine (I2) doping suppresses the generation of I- vacancies, and enhances the film conductivity due to an increase of copper vacancies (VCu). Aluminum ion (Al3+) doping further promotes the generation of more VCu and increases the work function of the CuI film. The proposed I2 and Al3+ co-doping strategy for CuI films significantly improves the passivating contact performance of Ag/Al3+-I2:CuI/p-Si heterojunction, contributing to the PCE significantly improved from 15.12% to 18.28%, which is the highest of solution-processed copper-based hole transport layers for c-Si solar cells so far. The results demonstrate the great potential of the CuI hole-selective layer applied for highly efficient c-Si solar cells.
materials science, multidisciplinary,physics, applied