CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory

Min-Kyu Kim,Ik-Jyae Kim,Jang-Sik Lee

DOI: https://doi.org/10.1126/sciadv.abe1341

IF: 13.6

2021-01-15

Science Advances

Abstract:A unique three-dimensional integration strategy is provided for high-performance, ultrahigh-density ferroelectric memory.

multidisciplinary sciences

What problem does this paper attempt to address?

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Chen Sun,Chao Li,Subhranu Samanta,Kaizhen Han,Zijie Zheng,Jishen Zhang,Qiwen Kong,Haiwen Xu,Zuopu Zhou,Yue Chen,Cheng Zhuo,Kai Ni,Xunzhao Yin,Xiao Gong

DOI: https://doi.org/10.1002/aelm.202200643

IF: 6.2

2022-01-01

Advanced Electronic Materials

Abstract:3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these drawbacks by introducing an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which has the advantages of ultra-low OFF current, back-end-of-line compatibility, higher mobility and better uniformity than poly-Si, and free of grain boundaries due to the amorphous nature. Ultra-scaled floating-gate (FG) transistors with a channel length of 60 nm are reported, achieving the highest ON current of 127 uA/um among all reported a-IGZO-based flash devices for high-density, low-power, and high-performance 3D NAND applications. Furthermore, a non-volatile and area-efficient ternary content-addressable memory (TCAM) with only two a-IGZO FG transistors is experimentally demonstrated. Array-level simulations using experimentally calibrated models show that this design achieves at least 240x array-size scalability and 2.7-fold reduction in search energy than 16T-CMOS, 2T2R, and 2FeFET TCAMs.
Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

Chuangtao Chen,Qingrong Huang,Chao Li,Li Zhang,Cheng Zhuo,Xunzhao Yin

DOI: https://doi.org/10.1109/SOCC49529.2020.9524766

2020-01-01

Abstract:Non-volatile (NV) devices are actively considered for compact and high performance memory architectures, especially in-memory computing (IMC) designs where processing and memory elements are co-located to address the memory wall issues for data-intensive applications. Content addressable memories (CAMs) are a form of INIC that compares the input query data against the stored data in parallel, and outputs the comparison result in terms of match or mismatch. Numerous CAMs have been proposed based on NV devices and demonstrate superior area, energy and performance metrics over the CMOS based conventional ones. Unlike the prior works that exploit the NV devices in the digital domain, in this paper, we proposed an analog CAM design, which utilizes the analog characteristics of Ferroelectrics field effect transistor (FeFET) to achieve a denser storage and search operations in analog domain. We illustrate our proposed analog CAM through a device-circuit co-design approach, and validate the 3-bit storage and search capability of the proposed design. The scalability of the proposed design is also examined. Evaluation results suggests that our analog CAM can achieve 22.4x higher memory density, and 8.6x higher energy efficiency compared with the conventional CMOS based design.
Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (adv. Electron. Mater. 12/2022)

Chen Sun,Chao Li,Subhranu Samanta,Kaizhen Han,Zijie Zheng,Jishen Zhang,Qiwen Kong,Haiwen Xu,Zuopu Zhou,Yue Chen,Cheng Zhuo,Kai Ni,Xunzhao Yin,Xiao Gong

DOI: https://doi.org/10.1002/aelm.202270067

IF: 6.2

2022-01-01

Advanced Electronic Materials

Abstract:Massively Scalable Ternary Content-Addressable Memories In article number 2200643, Xunzhao Yin, Xiao Gong, and co-workers present high-performance floating-gate transistors with an amorphous-InGaZnO channel and the application in ternary content addressable memories (TCAMs). The two-transistor configuration and the extremely low OFF current of the TCAM cell significantly improve the scalability of the TCAM array.
3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

Jiajie Yu,Tianyu Wang,Chen Lu,Zhenhai Li,Kangli Xu,Yongkai Liu,Yifan Song,Jialin Meng,Hao Zhu,Qingqing Sun,David Wei Zhang,Lin Chen

DOI: https://doi.org/10.1002/aelm.202400438

IF: 6.2

2024-01-01

Advanced Electronic Materials

Abstract:AbstractA new type of ferroelectric memory device with high reliability and complementary metal‐oxide‐semiconductor (CMOS) compatibility characteristics is an important condition for achieving integrated memory and computing chips. Here, 3D stacked ferroelectric memory devices based on ferroelectric materials of HfO2 are fabricated. The device exhibits high speed (50 ns), low read voltage (0.5 V), and great reliability with no substantial degradation after 1010 cycles and a 10‐years data retention at 85 °C. The IMP and NAND logic are achieved with stable memory window (>200 mV) across the vertical devices’ interconnection. On this basis, combining with the traditional CMOS logic device, multiple combination logic functions containing NOT, AND, and NOR are achieved by simulation. The collaboration of devices in the vertical direction providing the possibility of combining multi‐bit logic in memory functions and paves the way for the implementation of high‐density, high‐reliability, and low‐energy consumption computing‐in‐memory chips compatible with the CMOS technology.
An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications

Seonjun Choi,Myounggon Kang,Hong-sik Jung,Yuri Kim,Yun-heub Song

DOI: https://doi.org/10.3390/electronics13050889

IF: 2.9

2024-02-26

Electronics

Abstract:In this paper, we propose an optimized device structure with a highly stable process that addresses threshold voltage shift issues in the String-Select-Line (SSL) and Ground-Select-Line (GSL) gates using ferroelectric memory in 3D NAND flash memory applications. The proposed device utilizes nickel (Ni) instead of tungsten (W) for the GSL and SSL gates, enabling optimized polarization properties during the annealing process and leveraging the disparity in thermal expansion coefficients. Notably, the difference in thermal expansion coefficient from tungsten (W), employed in other Word Line (WL) gates, allows effective control over polarization properties. To validate the proposed structure, we fabricated and measured a Metal–Ferroelectric–Insulator–Silicon (MFIS) capacitor utilizing Hafnium–Zirconium Oxide (HZO) material. The measurement results indicate that a change in the upper metal layer results in a more than fivefold increase in the variance of polarization characteristics between the WL gates (responsible for the memory function) and the SSL and GSL gates dedicated to channel control. In addition, process simulation was conducted using the same device structure, confirming the application of tensile stress to the HZO thin film in the case of a W electrode and compressive stress in the case of a Ni electrode. Furthermore, applying this controlled polarization characteristic parameter to the 3D NAND flash memory structure revealed a reduction in the threshold voltage shift of the control gate from a previous change of 2.6 V or more to 0.05 V, facilitating stable control.

engineering, electrical & electronic,computer science, information systems,physics, applied
A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

Erh-Kun Lai,Hang-Ting Lue,Yi-Hsuan Hsiao,Jung-Yu Hsieh,Chi-Pin Lu,Szu-Yu Wang,Ling-Wu Yang,Tahone Yang,Kuang-Chao Chen,Jeng Gong,Kuang-Yeu Hsieh,Rich Liu,Chih-Yuan Lu

DOI: https://doi.org/10.1109/iedm.2006.346903

2006-12-01

Abstract:A double-layer TFT NAND-type flash memory is demonstrated, ushering into the era of three-dimensional (3D) flash memory. A TFT device using bandgap engineered SONOS (BE-SONOS) (Lue et al., 2005, Lai et al., 2006) with fully-depleted (FD) poly silicon (60 nm) channel and tri-gate P+-poly gate is integrated into a NAND array. Small devices (L/W=0.2/0.09 mum) with excellent performance and reliability properties are achieved. The bottom layer shows no sign of reliability degradation compared to the top layer, indicating the potential for further multi-layer stacking. The present work illustrates the feasibility of 3D flash memory
A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Juejian Wu,Hongtao Zhong,Kai Ni,Yongpan Liu,Huazhong Yang,Xueqing Li

DOI: https://doi.org/10.1145/3316781.3317737

2019-01-01

Abstract:Making embedded memory symmetric provides the capability of memory access in both rows and columns, which brings new opportunities of significant energy and time savings if only a portion of data in the words need to be accessed. This work investigates the use of ferroelectric field-effect transistors (FeFETs), an emerging nonvolatile, low-power, deeply-scalable, CMOS-compatible transistor technology, and proposes a new 3-transistor/cell symmetric nonvolatile memory (SymNVM). With ~1.67x higher density as compared with the prior FeFET design, significant benefits of energy and latency improvement have been achieved, as evaluated and discussed in depth in this paper.
Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Ru Huang,Falong Zhou,Li, Yan,Yimao Cai

DOI: https://doi.org/10.1109/icsict.2006.306465

2006-01-01

Abstract:Scaling down of conventional flash memory technology faces difficult technical challenges and some physical limitations. Novel silicon-based flash cell structures were presented in this paper as possible solutions. A novel cell structure using dual doping polysilicon (PNP) as the floating gate is proposed and experimentally exhibit higher programming speed and better data retention characteristics in comparison with conventional n-type floating-gate structure. To further enhance storage density and relax the stringent requirements of scaling, a novel vertical channel dual-nitride-trapping-layer ROM (VDNROM) as a kind of SONOS flash is proposed and experimentally demonstrated. Compared with conventional planar NROM cell, VDNROM structure can have high capability of cell area shrinking and achieve four-physical-bit per cell storage capability. The fabrication technologies of the two novel devices are fundamentally compatible with standard CMOS process
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

Kwan-Ho Kim,Seyong Oh,Merrilyn Mercy Adzo Fiagbenu,Jeffrey Zheng,Pariasadat Musavigharavi,Pawan Kumar,Nicholas Trainor,Areej Aljarb,Yi Wan,Hyong Min Kim,Keshava Katti,Seunguk Song,Gwangwoo Kim,Zichen Tang,Jui-Han Fu,Mariam Hakami,Vincent Tung,Joan M. Redwing,Eric A. Stach,Deep Jariwala,Roy H. Olsson III

DOI: https://doi.org/10.1038/s41565-023-01399-y

IF: 38.3

2023-05-23

Nature Nanotechnology

Abstract:Three-dimensional monolithic integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrent with enhanced energy efficiency in big data applications such as artificial intelligence. Despite decades of efforts, there remains an urgent need for reliable, compact, fast, energy-efficient and scalable memory devices. Ferroelectric field-effect transistors (FE-FETs) are a promising candidate, but requisite scalability and performance in a back-end-of-line process have proven challenging. Here we present back-end-of-line-compatible FE-FETs using two-dimensional MoS 2 channels and AlScN ferroelectric materials, all grown via wafer-scalable processes. A large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios greater than 10 7 and ON-current density greater than 250 μA um –1 , all at ~80 nm channel length are demonstrated. The FE-FETs show stable retention up to 10 years by extension, and endurance greater than 10 4 cycles in addition to 4-bit pulse-programmable memory features, thereby opening a path towards the three-dimensional heterointegration of a two-dimensional semiconductor memory with silicon complementary metal–oxide–semiconductor logic.

materials science, multidisciplinary,nanoscience & nanotechnology
A Novel 3D 2TnC FeRAM Architecture and Operation Scheme with Improved Disturbance for High-Bit-Density Dynamic Random-Access Memory

Ji-yeon Lee,Jiho Song,Seonjun Choi,Jae-min Sim,Yun-Heub Song

DOI: https://doi.org/10.3390/electronics13224474

IF: 2.9

2024-11-20

Electronics

Abstract:In this paper, we proposed the development of stackable 3D ferroelectric random-access memory (FeRAM), with two select transistors and n capacitors (2TnC), to address scaling limitations for bit density growth and the complicated manufacturing of 3D dynamic random-access memory (DRAM). The proposed 3D FeRAM has a 3D NAND-like architecture, with stacked metal–ferroelectric–metal (MFM) capacitors serving as memory cells in a unit string. A similar manufacturing process is used to achieve a cost-effective process and high bit density for next-generation DRAM applications. The two access transistors, string–select–line (SSL) and ground–select–line (GSL), are perfect string selections. We confirmed that the grounded back gate (GBG) of the proposed architecture can significantly improve the worst disturbance case compared to a floating back gate (FBG) like the 1TnC structure. Also, we confirmed the feasibility of performing the random-access operation during the read operation regardless of the data pattern of the selected string.

engineering, electrical & electronic,computer science, information systems,physics, applied
Oxide-semiconductor channel ferroelectric field-effect transistors for high-density memory applications: 3D NAND operation and the potential impact of in-plane polarization

Junxiang Hao,Xiaoran Mei,Takuya Saraya,Toshiro HIRAMOTO,Masaharu Kobayashi

DOI: https://doi.org/10.35848/1347-4065/ad11b8

IF: 1.5

2024-01-10

Japanese Journal of Applied Physics

Abstract:We have explored the 3D NAND memory operation of oxide-semiconductor (OS) channel ferroelectric FETs (FeFETs) by TCAD simulation with a multi-transistor NAND-string model. Key challenges in 3D NAND memory devices, such as (1) disturbance from pass voltages (Vpass), (2) interference from neighboring wordlines, and (3) both the conventional and self-boost program inhibit operation of unselected bitlines, are addressed. For a target device structure, the operation voltages can be optimized to satisfy the requirement of (1)–(3). The stacking possibility of 3D NAND OS FeFETs is also predicted by conducting an extrapolation from the TCAD simulation results. We also studied the potential impact of in-plane polarization in the NAND FeFET string. A comparative study shows that in-plane polarization under the spacer may lead to unexpected characteristics of OS-channel FeFETs in 3D NAND memory operation. This paper will provide insights on the feasibility of 3D NAND FeFETs for high-capacity storage memory.

physics, applied
Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

Xueqing Li,Juejian Wu,Kai Ni,Sumitha George,Kaisheng Ma,John Sampson,Sumeet Kumar Gupta,Yongpan Liu,Huazhong Yang,Suman Datta,Vijaykrishnan Narayanan

DOI: https://doi.org/10.1109/mdat.2019.2902094

2019-01-01

IEEE Design and Test

Abstract:Editor’s note: This article explores the design of high-density, low-power, and high-speed embedded nonvolatile memory arrays exploiting the unique device characteristics of the emerging ferroelectric FETs. —Vivek De, Intel Corporation
An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash

Haozhang Yang,Peng Huang,Runze Han,Xiaoyan Liu,Jinfeng Kang

DOI: https://doi.org/10.1007/s11432-021-3502-4

2023-03-15

Science China Information Sciences

Abstract:In this article, the design of a novel 3D-NAND-based content addressable memory (CAM) consisting of two flash transistors with ultra-high density and low power consumption is proposed for data-intensive computing. Hewlett simulation program with integrated circuit emphasis (HSPICE) of a 3D-NAND-based CAM array is performed to study the functionality and properties of the presented CAM design, and the results indicate that the energy consumption is 0.196 fJ/bit/search. The cell density of a 16-layer 3D-NAND flash is 157 times higher than CAMs based on conventional static random access memory. Furthermore, to exploit the multibit storage property of 3D-NAND flash, we also propose a multilevel CAM design, which significantly boosts the cell density and expands the functionality. As a proof-of-concept illustration, we take a 4-level CAM to successfully implement the search operation. Furthermore, the impacts of 3D-NAND layers and parasitic effects on the performance of the proposed CAM design are also discussed.

computer science, information systems,engineering, electrical & electronic
Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Ik‐Jyae Kim,Jang‐Sik Lee

DOI: https://doi.org/10.1002/adma.202206864

IF: 29.4

2022-12-11

Advanced Materials

Abstract:Ferroelectric materials have been intensively investigated for high‐performance nonvolatile memory devices in past decades owing to their nonvolatile polarization characteristics. Ferroelectric memory devices are expected to exhibit lower power consumption and higher speed than conventional memory devices. However, non‐complementary metal‐oxide‐semiconductor (CMOS) compatibility and degradation due to fatigue of traditional perovskite‐based ferroelectric materials have hindered the development of high‐density and high‐performance ferroelectric memories in the past. The recently developed hafnia‐based ferroelectric materials have attracted immense attention in the development of advanced semiconductor devices. Because hafnia is typically used in CMOS processes, it can be directly incorporated into the current semiconductor technologies. Additionally, hafnia‐based ferroelectrics show high scalability and large coercive fields that are advantageous for high‐density memory devices. This review summarizes the recent developments in ferroelectric devices, especially ferroelectric transistors, for next‐generation memory and neuromorphic applications. First, the types of ferroelectric memories and their operation mechanisms are reviewed. Then, issues limiting the realization of high‐performance ferroelectric transistors and possible solutions are discussed. The experimental demonstration of ferroelectric transistor arrays, including three‐dimensional ferroelectric NAND and its operation characteristics, are also reviewed. Finally, challenges and strategies toward the development of next‐generation memory and neuromorphic applications based on ferroelectric transistors are outlined. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Giuk Kim,Taeho Kim,Sangho Lee,Junghyeon Hwang,Minhyun Jung,Jinho Ahn,Sanghun Jeon

DOI: https://doi.org/10.35848/1347-4065/ad3f23

IF: 1.5

2024-05-08

Japanese Journal of Applied Physics

Abstract:Here, we present a novel approach to employing a negative capacitance (NC) phenomenon in the blocking oxide of charge trap flash (CTF) memory. To achieve this, we developed an inversible mono-domain like ferroelectric (IMFE) film through high-pressure post-deposition annealing in a forming gas at 200 atm (FG-HPPDA). The FG-HPPDA process enables to form a uniform alignment of domains and facilitates invertible domain switching behavior in ferroelectrics, generating an internal field by the flexo-electric effect as well as interface-pinned polarization by chemical reaction. Subsequently, to stabilize the NC effect, we fabricated the IMFE/Al2O3 heterostructure, which exhibits an outstanding capacitance-boosting feature. Finally, we successfully demonstrate unprecedented CTF memory with the NC effect in a blocking oxide. Our unique CTF device shows the improved performance (maximum incremental-step-pulse-programming (ISPP) slope ∼1.05) and a large MW (>8 V), attributed to the capacitance boosting by NC phenomenon.

physics, applied
Crystal Filter-Mediated Grain Alignment in Poly-Si Thin-Film Transistors for Next-Generation Ferroelectric Memory Devices

Ik-Jyae Kim,Jiwoung Choi,Jang-Sik Lee

DOI: https://doi.org/10.1109/led.2024.3425454

IF: 4.8157

2024-08-28

IEEE Electron Device Letters

Abstract:Hafnia-based ferroelectric thin-film transistors (FeTFTs) hold promise for next-generation memory applications like three-dimensional (3D) NAND flash memory, owing to their low power and high-speed operation. However, the utilization of polycrystalline Si (poly-Si) channels imposes limitations on the on-current of the device due to its low mobility. Consequently, alternative channel materials and diverse device engineering methods are being explored. In this study, we fabricated a FeTFT utilizing a poly-Si channel with aligned grains, achieved through the crystal-filtered (CF) metal-induced lateral crystallization method. The CF poly-Si channel exhibited an increase in on-current compared to conventional poly-Si channels. Additionally, the FeTFT employing CF poly-Si demonstrated a memory window of 3.2 V and a switching speed of 50 ns. This study represents a significant advancement in the field of FeTFTs and holds potential for application in next-generation electronic devices, particularly in 3D NAND flash memory, display, and neuromorphic device applications.

engineering, electrical & electronic
Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Shuiyuan Wang,Lan Liu,Lurong Gan,Huawei Chen,Xiang Hou,Yi Ding,Shunli Ma,David Wei Zhang,Peng Zhou

DOI: https://doi.org/10.1038/s41467-020-20257-2

IF: 16.6

2021-01-04

Nature Communications

Abstract:Abstract With the advent of the big data era, applications are more data-centric and energy efficiency issues caused by frequent data interactions, due to the physical separation of memory and computing, will become increasingly severe. Emerging technologies have been proposed to perform analog computing with memory to address the dilemma. Ferroelectric memory has become a promising technology due to field-driven fast switching and non-destructive readout, but endurance and miniaturization are limited. Here, we demonstrate the α-In 2 Se 3 ferroelectric semiconductor channel device that integrates non-volatile memory and neural computation functions. Remarkable performance includes ultra-fast write speed of 40 ns, improved endurance through the internal electric field, flexible adjustment of neural plasticity, ultra-low energy consumption of 234/40 fJ per event for excitation/inhibition, and thermally modulated 94.74% high-precision iris recognition classification simulation. This prototypical demonstration lays the foundation for an integrated memory computing system with high density and energy efficiency.

multidisciplinary sciences
3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

Xinyue Yu,Zhongyuan Ma,Zixiao Shen,Wei Li,Kunji Chen,Jun Xu,Ling Xu

DOI: https://doi.org/10.3390/nano12142459

IF: 5.3

2022-07-18

Nanomaterials

Abstract:As a strong candidate for computing in memory, 3D NAND flash memory has attracted great attention due to the high computing efficiency, which outperforms the conventional von-Neumann architecture. To ensure 3D NAND flash memory is truly integrated in the computing in a memory chip, a new candidate with high density and a large on/off current ratio is now urgently needed. Here, we first report that 3D NAND flash memory with a high density of multilevel storage can be realized in a double-layered Si quantum dot floating-gate MOS structure. The largest capacitance–voltage (C-V) memory window of 6.6 V is twice as much as that of the device with single-layer nc-Si quantum dots. Furthermore, the stable memory window of 5.5 V can be kept after the retention time of 105 s. The obvious conductance–voltage (G-V) peaks related to the charging process can be observed, which further confirms that the multilevel storage can be realized in double-layer Si quantum dots. Moreover, the on/off ratio of 3D NAND flash memory with a nc-Si floating gate can reach 104, displaying the characteristic of a depletion working mode of an N-type channel. The memory window of 3 V can be maintained after 105 P/E cycles. The programming and erasing speed can arrive at 100 μs under the bias of +7 V and −7 V. Our introduction of double-layer Si quantum dots in 3D NAND float gating memory supplies a new way to the realization of computing in memory.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
A Novel High-Density and Low-Power Ternary Content Addressable Memory Design Based on 3D NAND Flash

H. Z. Yang,P. Huang,R. Z. Han,Y. C. Xiang,Y. Feng,B. Gao,J. Z. Chen,L. F. Liu,X. Y. Liu,J. F. Kang

DOI: https://doi.org/10.1109/snw50361.2020.9131657

2020-01-01

Abstract:A novel ternary content addressable memory (TCAM) design based on 3D NAND Flash is proposed, in which two adjacent flash cells consist of one TCAM cell. HSPICE simulations show that the proposed TCAM has the ultra-low energy consumption of 0.298 fJ/bit/search for a 64-bit word and the cell density with 96-layer 3D NAND is reduced similar to 582 times compared to the conventional CMOS-based TCAMs.

CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (adv. Electron. Mater. 12/2022)

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications

A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

A Novel 3D 2TnC FeRAM Architecture and Operation Scheme with Improved Disturbance for High-Bit-Density Dynamic Random-Access Memory

Oxide-semiconductor channel ferroelectric field-effect transistors for high-density memory applications: 3D NAND operation and the potential impact of in-plane polarization

Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash

Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Crystal Filter-Mediated Grain Alignment in Poly-Si Thin-Film Transistors for Next-Generation Ferroelectric Memory Devices

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage

A Novel High-Density and Low-Power Ternary Content Addressable Memory Design Based on 3D NAND Flash