Abstract:For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration. In this study, a rapid and non-destructive approach for depth profiling is presented that uses confocal Raman microscopy. As an example, a 4H–SiC substrate with an epitaxial layer of several micrometers thick and top layer in nanoscale that was modified by ion-implantation was characterized. From the Raman depth profiling, longitudinal optical (LO) mode from the epitaxial layer and longitudinal optical phonon-plasmon coupled (LOPC) mode from the substrate layer can be sensitively distinguished at the interface. The position profile of the LOPC peak intensity in the depth direction was found to be effective in estimating the thickness of the epitaxial layer. For three kinds of epitaxial layer with thicknesses of 5.3 μm, 6 μm, and 7.5 μm, the average deviations of the Raman depth analysis were −1.7 μm, −1.2 μm, and −1.4 μm, respectively. Moreover, when moving the focal plane from the heavily doped sample (~1018 cm−3) to the epitaxial layer (~1016 cm−3), the LOPC peak showed a blue shift. The twice travel of the photon (excitation and collection) through the ion-implanted layer with doping concentrations higher than 1 × 1018 cm−3 led to a difference in the LOPC peak position for samples with the same epitaxial layer and substrate layer. Furthermore, the influences of the setup in terms of pinhole size and numerical aperture of objective lens on the depth profiling results were studied. Different from other research on Raman depth profiling, the 50× long working distance objective lens (50L× lens) was found more suitable than the 100× lens for the depth analysis 4H–SiC with a multi-layer structure.

Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

Defects in epitaxial 4H-SiC revealed by exciton recombination

Characterisation of SiC radiation detector technologies with synchrotron X-rays

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination

Photoluminescence Study of Epitaxial 4H-Sic Grown on AlN/Si ( 100 ) Complex Substrate by Chemical Vapor Deposition

Electrical and Spectroscopic Properties of SiC Detectors

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Investigation of the Performance Degradation of 4H-SiC Neutron Detectors Using MCNP and TCAD

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Monte Carlo Analysis of Silicon Carbide Neutron Detector With Double Conversion Layer

Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy

Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers