Abstract:With an external laser excitation, the electroluminescence (EL) of GaInN/GaN green light emitting diodes (LEDs) grown on sapphire by metal organic vapor phase epitaxy has been investigated. The EL was found significantly enhanced under this bias and the difference can not merely be attributed to additional photoluminescence (PL). Under 325 nm photon bias, the EL enhancement starts at its highest value and decreases along with an increase of the LED current. Under 408 nm and 488 nm bias, it increases first to a value smaller than that of the 325 nm bias and then decreases with a much lower rate along the current increase. The EL enhancement is attributed to the more efficient carrier injection into quantum wells (QWs) resulting from the screening of the QW polarization by photon bias. Therefore, an enhanced balance of majority and minority carriers was obtained resulting in a better radiative recombination rate. Meanwhile, the current-voltage characteristics show a negative current first and then a voltage reduction as forward voltage increases. The reverse photocurrent indicates carrier loss due to the solar cell effect in our LED device while at high current region the carrier loss is attributed to another effect controlled by the external electrical field. At the balance point of those two effects, the EL enhancement is the highest. These findings clarify the transition from highly efficient radiative recombination at low current density to the region of efficiency droop at high current densities.

Illumination-induced modulation of conductivity and Gunn oscillation properties in epitaxial GaAs

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Influence of the illumination on the subband structure and occupation in Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N/GaN heterostructures

Influence of the illumination on the subband structure and occupation in Al x Ga 1− x N/GaN heterostructures

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices

Influence of the Illumination on the Beating Patterns in the Oscillatory Magnetoresistance in Alxga1-Xn/Gan Heterostructures

Influence Of The Illumination On The Spin Splitting Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Luminescence Enhancement of Plasma-Etched InAsP∕InGaAsP Quantum Wells

Cathodoluminescence of quantized energy states at AlGaN/GaN interface

Effects of Light Illumination on Electron Velocity of Algan/Gan Heterostructures under High Electric Field

Effect of Substrate Photoexcitation on Channel Conduction in A Modulation-Doped Alxga1-Xas/Gaas Heterostructure

Photon Modulated Electroluminescence of Gainn/Gan Multiple Quantum Well Light Emitting Diodes

Simulation Investigation of Multiple Domain Observed in In0.23Ga0.77As Planar Gunn Diode

Green Light Emitting Diodes under Photon Modulation

Magnetotransport Properties of the Two-Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures under Illumination

Influence of the Illumination on Weak Antilocalization in an AlxGa1−xN∕GaN Heterostructure with Strong Spin-Orbit Coupling

Investigation of the Electroluminescence Spectrum Shift of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes under Direct and Pulsed Currents

Tuning the Charge States in InAs/GaSb or InAs/GaInSb Composite Quantum Wells by Persistent Photoconductivity

Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers

Synchrotron-radiation-induced Surface Photovoltage on GaAs Studied by Contact-Potential-difference Measurements.