Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Effect of TiW blocking layer and temperature annealing on resistive switching parameters of Hafnium oxide based CBRAM device

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Resistive Switching Characteristics of Pt/TaOx/HfNx Structure and Its Performance Improvement

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO 2 /Pt RRAM.

Effect of Annealing Conditions on Resistive Switching in Hafnium Oxide-based MIM Devices for Low-power RRAM

Multi-mode Resistive Switching Behaviors Induced by Modifying Ti Interlayer Thickness and Operation Scheme

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx (HAT) RRAM

Bipolar Resistive Switching Characteristics of Tin/Hfox/Ito Devices for Resistive Random Access Memory Applications

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

Complementary Resistive Switching Behaviors Evolved from Bipolar Tin/Hfo2/Pt Device

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Improving Analog Switching in HfOx-Based Resistive Memory with a Thermal Enhanced Layer

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Analog and Digital Resistive Switching in W/TiO2/ITO Devices: The Impact of Crystallinity and Indium Diffusion

Complementary Resistive Switching Behavior for Conductive Bridge Random Access Memory

Stabilizing Resistive Switching Performances of TiN/MgZnO/ZnO/Pt Heterostructure Memory Devices by Programming the Proper Compliance Current

Improvement of Resistive Switching Properties in $ \Hbox{zro}_{2}$-Based ReRAM with Implanted Ti Ions

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device