Abstract:WO 3 -doping significantly enhances the optical and electrochemical properties of Nb 2 O 5 thin films, making them ideal for optoelectronic applications. This study investigates WO 3 -doped Nb 2 O 5 thin films deposited via reactive co-sputtering of niobium and tungsten metal targets at room temperature. WO 3 concentration was controlled by adjusting the power to the tungsten target. The microstructure, surface morphology, optical, and electrochemical properties of the deposited films were analyzed. X-ray diffraction revealed that the films are polycrystalline, with improved crystallinity as WO 3 content increased. Higher doping reduced microstrain and increased grain size. X-ray photoelectron spectroscopy confirmed chemical composition and doping levels. Atomic force microscopy showed uniform surface morphology in pristine films, with increased surface roughness at higher WO 3 concentrations. The optical parameters of the thin films were evaluated by measuring their transmittance and reflectance spectra across a wavelength range of 300 to 800 nm. Optical analysis revealed reduced transmittance and reflectance but higher absorption at a 41% WO 3 concentration. The absorption coefficient exhibits a redshift in the absorption edge accompanied by a reduction in the energy band gap from 3.75 eV to 3.10 eV as the doping concentration increases. The film with 41% WO 3 demonstrated high absorption, low transmittance, and enhanced optical and electrical conductivity. This balance between high conductivity and low transmittance ensures that WO 3 doped Nb 2 O 5 thin films can be a suitable material for sensor and solar cell applications. Cyclic voltammetry measurements showed the impact of WO 3 doping on cathode current density and total charge density. Remarkably, the best performance was observed for the 41% WO 3 doped thin film. Overall, WO 3 doping strongly influences the optical and electrochemical properties, indicating that a specific concentration of WO 3 in WO 3 -Nb 2 O 5 mixed oxide thin films holds great potential for electrochromic devices, while also being suitable for use in sensors and solar cells.

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