Abstract:A 61-MHz Pierce oscillator constructed in 0.35-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> CMOS technology and referenced to a polysilicon surface-micromachined capacitive-gap-transduced wine-glass disk resonator has achieved phase noise marks of −119 dBc/Hz at 1-kHz offset and −139 dBc/Hz at far-from-carrier offsets. When divided down to 13 MHz, this corresponds to −132 dBc/Hz at 1-kHz offset from the carrier and −152 dBc/Hz far-from-carrier, sufficient for mobile phone reference oscillator applications, using a single MEMS resonator, i.e., without the need to array multiple resonators. Key to achieving these marks is a Pierce-based circuit design that harnesses a MEMS-enabled input-to-output shunt capacitance more than <inline-formula> <tex-math notation="LaTeX">$100\times $ </tex-math></inline-formula> smaller than exhibited by macroscopic quartz crystals to enable enough negative resistance to instigate and sustain oscillation while consuming only <inline-formula> <tex-math notation="LaTeX">$78~\mu \text{W}$ </tex-math></inline-formula> of power—a reduction of <inline-formula> <tex-math notation="LaTeX">$\sim 4.5\times $ </tex-math></inline-formula> over previous work. Increasing the bias voltage of the resonator by 1.25 V further reduces power consumption to <inline-formula> <tex-math notation="LaTeX">$43~\mu \text{W}$ </tex-math></inline-formula> at the cost of only a few decibels in far-from-carrier phase noise. This oscillator achieves a 1-kHz-offset figure of merit (FOM) of −231 dB, which is now the best among published chip-scale oscillators to date. A complete linear circuit analysis quantifies the influence of resonator input-to-output shunt capacitance on power consumption and predicts further reductions in power consumption via reduction of electrode-to-resonator transducer gaps and bond pad sizes. The demonstrated phase noise and power consumption posted by this tiny MEMS-based oscillator are attractive as potential enablers for low-power “set-and-forget” autonomous sensor networks and embedded radios.

A Low Impedance CMOS-MEMS Capacitive Resonator Based on Metal-Insulator-Metal (MIM) Capacitor Structure

Vhf Cmos-Mems Oxide Resonators With Q > 10,000

High- Integrated CMOS-MEMS Resonators With Deep-Submicrometer Gaps and Quasi-Linear Frequency Tuning

Platform Development for CMOS-MEMS Multi-Gap Capacitive Transducers

Miniaturized Multi-Cantilever MEMS Resonators with Low Motional Impedance

Characteristics of phase delay in capacitive pick-off circuits for MEMS resonators

A Generalized Cmos-Mems Platform For Micromechanical Resonators Monolithically Integrated With Circuits

A Fully Differential CMOS–MEMS DETF Oxide Resonator with $Q > \hbox{4800}$ and Positive TCF

Inter-CMOS process for monolithic integrated MEMS resonator

SOI-based capacitive micromechanical resonator with submicron gap-spacing

A generalized foundry CMOS platform for capacitively-transduced resonators monolithically integrated with amplifiers

Quasi-linear Frequency Tuning for CMOS-MEMS Resonators

Realizing Deep-Submicron Gap Spacing for CMOS-MEMS Resonators with Frequency Tuning Capability Via Modulated Boundary Conditions

Design and Application of a Metal Wet-Etching Post-Process for the Improvement of CMOS-MEMS Capacitive Sensors

High-performance MIM Capacitor Using ALD High-K HfO2-Al2O3 Laminate Dielectrics

High-Performance MIM Capacitors for a Secondary Power Supply Application

Low-Power MEMS-Based Pierce Oscillator Using a 61-MHz Capacitive-Gap Disk Resonator

High Performance Ald Hfo2-Al2o3 Laminate Mim Capacitors for Rf and Mixed Signal Ic Applications

Ultra-sensitive magnetic field sensor based on a low-noise magnetoelectric MEMS-CMOS oscillator

Multi-harmonic phononic frequency comb generation in capacitive CMOS-MEMS resonators

Integrated RF MEMS/CMOS Devices