Realizing Deep-Submicron Gap Spacing for CMOS-MEMS Resonators with Frequency Tuning Capability Via Modulated Boundary Conditions

Wen-Chien Chen,Ming-Huang Li,Weileun Fang,Sheng-Shian Li
DOI: https://doi.org/10.1109/memsys.2010.5442301
2010-01-01
Abstract:Integrated CMOS-MEMS array resonators have been demonstrated that takes advantage of pull-in effect to surmount limitations of CMOS foundry process and attains electrode-to-resonator gap spacing at a deep-submicron range, leading to much smaller motional impedance compared to conventional CMOS-MEMS technologies, while possessing unique frequency tuning capability by modulating their mechanical boundary conditions. With the increase of applied dc-bias which simultaneously serves for functions of pull-in and resonator operation, the upward frequency shift of resonance caused by boundary condition (“BC”) change offers opposite tuning mechanism to well-known effect of electrical stiffness. As a result, frequency variation induced by BC-modulation and electrical-stiffness would yield a frequency-insensitive region under a certain dc-bias.
What problem does this paper attempt to address?