Abstract:A potentially manufacturable liquid‐source MOCVD process was applied to deposit platinum (Pt) films (12–140 nm) on thermally oxidized Si substrates. The deposition of Pt films was carried out at a substrate temperature of 350 °C by oxygen‐assisted pyrolysis of complex precursors in a low‐pressure, hot‐wall reactor. The effects of two different metal–organic precursors, a) trimethyl methyl cyclopentadienyl platinum [(CH3)3CH3CpPt], and b) platinum acetylacetonate [Pt(acac)2], on the properties of Pt films were studied. Although the polycrystalline Pt films deposited from Pt(acac)2 exhibited a preferred (111) orientation with a X‐ray intensity ratio of I(111)/I(200) = 40, the films deposited from (CH3)3CH3CpPt were highly (111) oriented with I(111)/I(200) = 270. The following properties were typical of Pt films from Pt(acac)2 as compared to Pt films from (CH3)3CH3CpPt: finer grain size (25 nm vs. 50 nm), smaller root mean square (rms) surface roughness (5 nm vs. 15 nm), and better step coverage (95 % vs. 35 %). These experimental findings indicated that growth of Pt films from Pt(acac)2 occurred under the kinetically‐limited regime, whereas the deposition of Pt from (CH3)3CH3CpPt was limited by the mass transport rate. Additionally, the temperature (4.2–293 K) dependence of the electrical resistivities (ρ) of Pt films was measured and the electron mean free paths were estimated. It was observed that ρ(T) deviated from Matthiessen's rule. Platinum thin films are grown on thermal‐SiO2/Si at 350 °C from (CH3)3‐CH3CpPt and Pt(acac)2. Films deposited from the first precursor show an orientation ratio of [I(111)/I(200) = 270], a large grain size of 50 nm, and poor conformality of 35–45 %, while those produced from Pt(acac)2 show [I(111)/I(200) = 40], finer grain structure, and excellent conformality of 85–95 % (see Figure). Film resistivity exhibits values of 23.6 and 27.6 μΩ cm.

A Novel Study of the Growth and Resistivity of Nanocrystalline Pt Films Obtained from Pt(acac)2 in the Presence of Oxygen or Water Vapor

MOCVD of Platinum Films from (CH3)3CH3CpPt and Pt(acac)2: Nanostructure, Conformality, and Electrical Resistivity

Crystallization kinetics of thin water films on Pt(111): effects of oxygen and carbon-monoxide adspecies

Investigation of microstructure evolution in Pt-doped TiO2 thin films deposited by rf magnetron sputtering

Growth and Decomposition of Pt Surface Oxides

Sfg and Stm Studies of the Pt(111) Crystal Face at Atmospheric Co and Oxygen Pressures: Preparation of Platinum Nanocluster Arrays

Effects of Oxygen Partial Pressure and Thermal Annealing on the Electrical Properties and High-Temperature Stability of Pt Thin-Film Resistors

Experimental study of thermal annealing effects on evaporated platinum thin film with various substrate configurations

Insight towards Nucleation Mechanism and Change in Morphology for Nanostructured Platinum Thin Film Directly Grown on Carbon Substrate via Electrochemical Deposition

Study of the Initial Aluminide Phase Growth in Al/Pt Couples

In situ study of the thermal stability of supported Pt nanoparticles and their stabilization via atomic layer deposition overcoating

Mechanistic studies for depositing highly dispersed Pt nanoparticles on carbon by use of trimethyl(methylcyclopentadienyl)platinum(IV) reactions with O2 and H2

Effect of Pt on Stress Rupture Properties of Pt-Modified Nickel Aluminide Coatings at 1100 °C

Interaction Between Pt(acac)2 and Alumina Surfaces Studied by XAS

Synthesis and Characterization of Optical Transmissive, Electrically Conductive Platinum and Platinum Oxide Semiconductor Thin Films

Two-dimensional crystalline platinum oxide

Determination of growth regimes of Pt nanostructures on GaN (0001) based on the control of Pt thickness and annealing time: Morphological evolution of Pt nanostructures from the nanoparticles, nanoclusters to porous network

Insight on Thermally Activated Hydrocarbon Dehydrogenation on the Pt3Ni(111) Surface: from Adsorbed Hydrocarbons Up to Graphene Formation

Role of the Oxidizing Co-Reactant in Pt Growth by Atomic Layer Deposition Using MeCpPtMe 3 and O 2 /O 3 /O 2 -Plasma

Atomistic Mechanism of Surface Oxide Formation on Pt(111)

On the Correlation Between Crystallinity of Platinum Bottom Electrode and That of Mod Derived Pzt Thin Films