Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition
Jinseong Heo,Heejeong Jeong,Yeonchoo Cho,Jaeho Lee,Kiyoung Lee,Seunggeol Nam,Eun-Kyu Lee,Sangyeob Lee,Hyangsook Lee,Sungwoo Hwang,Seongjun Park
DOI: https://doi.org/10.1021/acs.nanolett.6b02199
IF: 10.8
2016-10-05
Nano Letters
Abstract:Atomically thin two-dimensional (2D) materials range from semimetallic graphene to insulating hexagonal boron nitride to semiconducting transition-metal dichalcogenides. Recently, metal-insulator-semiconductor field effect transistors built from these 2D elements were studied for flexible and transparent electronics. However, to induce ambipolar characteristics for alternative power-efficient circuitry, ion-gel gating is often employed for high capacitive coupling, limiting stable operation at ambient conditions. Here, we report reconfigurable MoTe<sub>2</sub> optoelectronic transistors with all 2D components, where the device can be reconfigured by both drain and gate voltages. Eight different configurations for each fixed voltage are spatially resolved by scanning photocurrent microscopy. In addition, metal-insulator transitions are observed in both electron and hole carriers under 2 V due to strong Coulomb interaction in the system. Furthermore, the vertical tunneling photocurrent through multiple van der Waals layers between the gate and source contacts is measured. Our reconfigurable devices offer potential building blocks for system-on-a-chip optoelectronics.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology