Abstract:Facile control of the photoluminescence (PL) from monolayer molybdenum disulfide (1L MoS2) is demonstrated. Room temperature treatment with a fluorinated or sulfonated chemical solution enhances and blueshifts the PL emission. In contrast, atomic layer deposition of a high‐κ dielectric attenuates and redshifts the 1L MoS2 PL spectrum. The peak width is also tunable. Monolayer molybdenum disulfide (1L MoS2), a promising optoelectronic material, emits strong visible photoluminescence (PL). Systematic control of the intensity, energy, and spectral width of PL from 1L MoS2 on silicon dioxide/silicon (SiO2/Si) is demonstrated via simple external treatments. Treating MoS2 with solutions formed from the superacid bis‐(trifluoromethanesulfonyl)amide (TFSA) enhances, blueshifts, and sharpens the PL. Treatments with solutions from structurally analogous chemicals that lack sulfur, in the case of bis(trifluoroacetamide) (BTFA), or lack fluorine, in the case of methanesulfonamide (MSA), show the same trend, suggesting a two‐component mechanism for TFSA involving the presence of electronegative species and sulfur vacancy passivation. Up to ≈100× enhancement of the PL intensity is achieved, with the peak blueshifted by ≈30 meV and the spectral linewidth halved. Conversely, direct thermal atomic layer deposition (ALD) of aluminum oxide (Al2O3) or hafnium oxide (HfO2) is found to suppress the PL by up to a factor of ≈3, redshift by up to ≈70 meV, and broaden by ≈3×. Single‐spot and mapping Raman/PL techniques are combined in a robust characterization process to associate changes in the PL character to charge doping. This work demonstrates the convenient tunability of the optical behavior of 1L MoS2 by varying the electron density.

Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates.

Reversible Photoluminescence Modulation of Monolayer MoS2 on a Ferroelectric Substrate by Light Irradiation and Thermal Annealing

Reversible photoluminescence modulation of monolayer MoS 2 on a ferroelectric substrate by light irradiation and thermal annealing

Photodriven Transient Picosecond Top-Layer Semiconductor to Metal Phase-Transition in p-Doped Molybdenum Disulfide

Electro-optic modulation of solution-processed molybdenum disulfide

Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating

Plasmonic Hot Electron Induced Structural Phase Transition in Monolayer MoS_2

Plasmonic Hot Electron Induced Structural Phase Transition in a MoS2 Monolayer

Highly Efficient and Controllable Photoluminescence Emission on a Suspended MoS2-based Plasmonic Grating

Evolutional photoluminescence property in ultraviolet-ozone-treated monolayer MoS2

Tunable Photoluminescence from Monolayer Molybdenum Disulfide

Macroscopic electro-optical modulation of solution-processed molybdenum disulfide

Modulating the Optoelectronic Properties of MoS2 by Highly Oriented Dipole-Generating Monolayers

Tailoring the Physical Properties of Molybdenum Disulfide Monolayers by Control of Interfacial Chemistry.

Insulator–metal transition in substrate-independent VO2 thin film for phase-change devices

Reversible H-T′ Phase Transition in Monolayer Molybdenum Disulfide Via Electron Beam Assisted Solid State Lithiation/delithiation

Measurements of electrically tunable refractive index of MoS2 monolayer and its usage in optical modulators

Probing the Electron States and Metal-Insulator Transition Mechanisms in Molybdenum Disulphide Vertical Heterostructures

A single silicon nanostripe gated suspended monolayer and bilayer WS2 to realize abnormal electro-optical modulation

Tailoring Mos2 Exciton-Plasmon Interaction by Optical Spin-Orbit Coupling

Tunable Photoluminescence in a Van Der Waals Heterojunction Built from a MoS2 Monolayer and a PTCDA Organic Semiconductor