Abstract:Hafnium oxide (HfO2) is a leading candidate to replace silicon oxide as the gate dielectric for future generation metal-oxide-semiconductor based nanoelectronic devices. Atomic layer deposition (ALD) has recently gained interest because of its suitability for fabrication of conformal films with thicknesses in the nanometer range. This study uses periodic density functional theory (DFT) to investigate the mechanisms of both half-reactions occurring on the growing surface during the ALD of HfO2 using HfCl4 and water as precursors. We find that the adsorption energy and the preferred site of adsorption of the metal precursor are strong functions of the water coverage. As water coverage increases, the metal precursor preferentially interacts with multiple surface adsorption sites. During the water pulse the removal of Cl can be facilitated by either a ligand exchange reaction or the dissociation of Cl upon increase in coordination of the Hf atom of the precursor. Our predicted potential energy surface indicates that a more likely mechanism is hydration of the adsorbed Hf complex up to a coordination number of 7, followed by the dissociation of a chloride ion that is stabilized by solvation. Born-Oppenheimer molecular dynamics (BOMD) simulations of an adsorbed metal precursor in the presence of a multilayer of water shows that Cl dissociation is facile if sufficient water molecules are present to solvate the Cl(-) anions. Hence, solvation plays a crucial role during the water pulse and provides an alternative explanation for why ALD growth rates for this system decrease at high temperatures.

Electrochemical Reduction of Hafnium Tetrachloride in Molten NaCl ‐ KCl

Electrochemical Behavior of Hafnium in (Nacl-Kcl-naf-hfo2) Molten Salt

Electrochemical Studies on the Redox Behavior of Zr(IV) in the LiCl-KCl Eutectic Molten Salt and Separation of Zr and Hf

Dissolution of tungsten carbide and valence analysis of tungsten ions in chloride–fluoride molten salts

Purification of Kroll's Reduction Unreacted Hafnium Oxide Residue

Electrochemical Behavior of Tungsten in (nacl–kcl–naf–wo3) Molten Salt

Low Temperature Electrodeposition of Titanium in Fluoride-Added LiCl–KCl–CsCl Molten Salt

AN INVESTIGATION OF THE VAPOR DENSITY OF HAFNIUM TETRACHLORIDE AT HIGH TEMPERATURES

Electrochemical behavior of tungsten in the (NaCl-KCl-NaF-Na2WO4) molten salt

Electrochemical Behavior of Zirconium in the (Nacl-Kcl-naf-zro2) Molten Salt

Thermodynamics of niobium chlorides and mixtures with alkali chlorides

Temperature Dependence on Dry Etching of Hafnium Oxide Using an Inductively Coupled Plasma

Raman and Electrochemical Study of Zirconium in LiCl-KCl-LiF-ZrCl4

Electrochemical Reduction of V2O5 in the (nacl–kcl–naf) Molten Salt

Preparation of Ferrotitanium Alloy from Ilmenite by Electrochemical Reduction in Chloride Molten Salts

Electrodeposition of tantalum and its electrochemical behaviors in molten NaCl-KCl

Molten Salt Synthesis, Formation Mechanism, and Oxidation Behavior of Nanocrystalline HfB 2 Powders

Electrolytic Synthesis of Ferrotitanium Powders from Ilmenite in CaCl2-NaCl Melts at a Lower Temperature of 700 °C

Atomic Layer Deposition of Hafnium Oxide from Hafnium Chloride and Water

Electrodeposition of titanium from chloride melts

Direct electrochemical reduction of low titanium chlorides into titanium aluminide alloy powders from molten eutectic KCl–LiCl–MgCl2