Abstract:Layered semiconductors, represented by transition metal dichalcogenides, have attached extensive attention due to their unique and tunable electrical and optical properties. In particular, lateral layered semiconductor multijunctions, including homojunctions, heterojunctions, hybrid junctions and superlattices, present a totally new degree of freedom in research on electronic devices beyond traditional materials and their structures, providing unique opportunities for the development of new structures and operation principle-based high performance devices. However, the advances in this field are limited by the precise synthesis of high-quality junctions and greatly hampered by ambiguous device performance limits. Herein, we review the recent key breakthroughs in the design, synthesis, electronic structure and property modulation of lateral semiconductor multijunctions and focus on their application-specific devices. Specifically, the synthesis methods based on different principles, such as chemical and external source-induced methods, are introduced stepwise for the controllable fabrication of semiconductor multijunctions as the basics of device application. Subsequently, their structure and property modulation are discussed, including control of their electronic structure, exciton dynamics and optical properties before the fabrication of lateral layered semiconductor multijunction devices. Precise property control will potentially result in outstanding device performances, including high-quality diodes and FETs, scalable logic and analog circuits, highly efficient optoelectronic devices, and unique electrochemical devices. Lastly, we focus on several of the most essential but unresolved debates in this field, such as the true advantages of few-layer vs. monolayer multijunctions, how sharp the interface should be for specific functional devices, and the superiority of lateral multijunctions over vertical multijunctions, highlighting the next-phase strategy to enhance the performance potential of lateral multijunction devices.

Strained- layer semiconductor superlattices

Molecular Beam Epitaxial Growth and Properties of Layered Semiconductor Structures for Advanced Photonic and Electronic Devices

Strain-engineered growth of two-dimensional materials

Strain-Directed Layer-By-Layer Epitaxy Toward van der Waals Homo- and Heterostructures

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Structure and Strength of Multilayers

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Strain engineering in semiconducting two-dimensional crystals

Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition

Lateral layered semiconductor multijunctions for novel electronic devices

Monolayer MoS$_2$ Strained to 1.3\% with a Microelectromechanical System

Layer-by-layer epitaxy of multilayer MoS2 wafers

Epitaxial Growth of Large‐area Monolayers and van der Waals Heterostructures of Transition‐metal Chalcogenides via Assisted Nucleation

Strain-Induced Electronic Structure Changes in Stacked van der Waals Heterostructures

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Layer-by-layer Epitaxy of Multi-Layer MoS2 Wafers

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

Engineering the Strain and Interlayer Excitons of 2D Materials via Lithographically Engraved Hexagonal Boron Nitride

Strain modulation of epitaxial h-BN on sapphire: the role of wrinkle formation for large-area two-dimensional materials

Strain Engineering 2D MoS$_{2}$ with Thin Film Stress Capping Layers