Abstract:The conventional surface x-ray diffraction method [1] allows us to determine atomic arrangements of crystal surfaces and interfaces.While x-ray diffraction intensities distributed within a reciprocal lattice space are usually measured with a finetooth comb using the method, an overall image of the diffraction intensity profile is difficult to get until after such lengthy and time consuming measurement is completed.We proposed x-ray reciprocal-lattice space imaging method (X-ReSI) for straightforward understanding of 1D nanostructures such as NiO nanowires [2].The X-ReSI is a single-exposure diffraction technique which records the reciprocallattice pattern of a fixed crystalline nanostructure using a 2D detector.The fundamental idea behind the method is that the reciprocal lattice of 1D or 2D structures are an array of sheets or rods, respectively.Thus the reciprocal-lattice space can be recorded for a fixed sample with a 2D x-ray detector fixed.The typical exposure time is a few seconds to a few minutes using the 3rd generation x-ray source.We applied the method to structural evaluation of Bi nanolines being 1/8 monolayers in coverage on average.The results of the application reveal that Bi nanolines embeded in Si was found to have a 2 x n superstructure having Bi dimer bonds [3].On the other hand line structures in samples capped with an amorphous Si layer and having no cap layers still remained with a non-detectable amount of the 2 x n atomic structures.Other applications are structural determination of a Bi4Ti3O12 thinfilm and in-situ observation of a Au electrode in H2SO4.

On the origin of the additional electron diffraction spots from epitaxial (111) Si single-crystal films

A Study of Rheed Pattern from the Epitaxial Growth of Si-Ge Crystal

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)

Structural Characterization of Epitaxial Alpha-Derived Fesi2 on Si(111)

Epitaxial growth of Si thin films with hexagonal close-packed structures on metal substrates

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Structural characterization of low temperature epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM

Substrate Dependence Of Anisotropic Electronic Structure In Ag(111) Quantum Film Studied By Angle-Resolved Photoelectron Spectroscopy

Multiple origins of extra electron diffractions in fcc metals

Studies of Fesi2/Si Quantum Dot Nano-Structures by X-Ray Bragg-Surface Diffractions (Bsd)

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth Sic on Si(100) Using C-60 and Si

Diffuse diffraction spots in RHEED patterns

Forbidden 200 diffraction spots in silicon

Comment on “A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films” [Surf. Sci. 459 (2000) 277–286]

Determination of Stacking Fault Probability in Fcc Fe-Mn-Si-Al Alloy by Electron Diffraction

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Bunches of misfit dislocations on the onset of relaxation of Si$_{0.4}$Ge$_{0.6}$/Si(001) epitaxial films revealed by high-resolution x-ray diffraction

Room-Temperature Growth Of Al Films On Si(111)-7x7 Surface

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Study of Si1-xGEx epitaxy growth on Si(100) and Si(111)