Abstract:Iron silicides were grown on Si(110) and Si(111) substrates by the molecular beam epitaxy method at 650-920 degrees C and 920 degrees C, respectively. Scanning tunneling microscopy observation showed that only nanowires (NWs) formed on Si(110), and the dimensions of the NWs increased with increasing growth temperature. The sizes of the NWs grown at 920 degrees C reached similar to 80 nm high, similar to 250 nm wide, and several mu m long, and were much larger than NWs grown at 650 degrees C, indicating that high temperature was favorable for NW growth. Electron backscatter diffraction characterization identified that the crystal structure of the NWs grown at 920 degrees C was beta-FeSi2 with a single orientation of beta-FeSi2(101)//Si(1 (1) over bar(1) over bar)), beta-FeSi2[010]//Si[110]. Iron silicides grown on Si(111) at 920 degrees C formed three-dimensional (3D) islands and ultra-thin films. The 3D islands were identified as the Fe2Si phase with hexagonal crystal structure and space group 164, and the cell constants at room temperature were a= 0.405 nm and c= 0.509 nm. The orientation relationship between the Fe2Si phase and the Si(111) substrate was Fe2Si(001)//Si(111), Fe2Si[(1) over bar(2) over bar0]//Si[11 (2) over bar].

Structural Characterization of Epitaxial Alpha-Derived Fesi2 on Si(111)

Electronic States at the First Stages of Epitaxial Growth of Fe Silicides on Si(111)7 X 7

Structure and Orientation Analysis of Iron Silicide Epitaxially Grown on Si Substrates

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Electronic structure and bonding in epitaxially stabilized cubic iron silicides

Solid Phase Epitaxy of Beta-Fesi2 on Si(100)

Structural characterization of low temperature epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM

/spl beta/-FeSi/sub 2/ formation on MOCVD Fe/Si(100) by solid phase epitaxy

Epitaxial Growth and Atomic Arrangement in Fe2CrO4 on Crystal Symmetry Matched (001) MgAl2O4

Epitaxial growth of Si thin films with hexagonal close-packed structures on metal substrates

Room-Temperature Growth Of Al Films On Si(111)-7x7 Surface

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Molecular Beam Epitaxy Growth and Post-Growth Annealing of Fese Films on Srtio3: A Scanning Tunneling Microscopy Study

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

Studies on the Heterostructure of Fe Film on Si Substrate

Ion Beam Syntheses and Microstructure Studies of A New Fesi2 Phase

Room-Temperature Growth of Al Films on Si(111)-7 7 Surface

Molecular Beam Epitaxy Growth of Tetragonal FeS Films on SrTiO3 (001) Substrates

Effects of a Ti Interlayer on Formation of Β-Fesi2 on Si(001) Substrates

Two-Dimensional Growth Of Al Films On Si(111)-7 X 7 At Low-Temperature

Epitaxial Growth of a Full-Heusler Alloy Co$_{2}$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy