Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module
DU Yujie,LI Cui,TANG Xinling,YANG Fei,WU Junmin,LI Shiyan,JIN Xiaoxing,ZHANG Junming
DOI: https://doi.org/10.1109/sslchinaifws51786.2020.9308673
2020-01-01
Abstract:Silicon carbide (SiC) devices have attracted much attention due to their superior characteristics of high blocking voltage, high frequency and high operating temperature. In recent years, with the continuous development of SiC device technology, domestic and foreign high-voltage SiC devices have made certain breakthroughs. In this paper, a 6.5kV/400A SiC module is prepared using the 6.5kV SiC MOSFET chip and 6.5kV SiC SBD chip independently developed by the research group. The on-resistance of the module is 20.8mΩ at a junction temperature of 150°C, and the drain leakage current is 146μA under a voltage of 6.5kV, indicating that the module has excellent conduction and blocking characteristics. The switching characteristics of the 6.5kV/400A SiC module are tested and evaluated based on high-voltage SiC dynamic test platform. At a junction temperature of 150°C, the turn-on energy is 714.2mJ, and the turn-off energy Eoff is 448mJ, compared with the Si IGBT module of the same voltage and current, the SiC module has faster switching speed, lower switching loss, and has obvious advantages in high-voltage and high-frequency applications.