Abstract:Surface passivation using intermediate phase transfer (IPT) enhances the performance of InAs colloidal quantum dot (CQD) photodetectors. IPT enables stable CQD ink in green solvents and facile control over the surface condition of the nanocrystals. The resultant photodiodes exhibit high gain (≈10) and fast response times (≈12/36 ns), resulting in a notable figure of merit (FOM). Solution‐processed low‐bandgap semiconductors are crucial to next‐generation infrared (IR) detection for various applications, such as autonomous driving, virtual reality, recognitions, and quantum communications. In particular, III–V group colloidal quantum dots (CQDs) are interesting as nontoxic bandgap‐tunable materials and suitable for IR absorbers; however, the device performance is still lower than that of Pb‐based devices. Herein, a universal surface‐passivation method of InAs CQDs enabled by intermediate phase transfer (IPT), a preliminary process that exchanges native ligands with aromatic ligands on the CQD surface is presented. IPT yields highly stable CQD ink. In particular, desirable surface ligands with various reactivities can be obtained by dispersing them in green solvents. Furthermore, CQD near‐infrared (NIR) photodetectors are demonstrated using solution processes. Careful surface ligand control via IPT is revealed that enables the modulation of surface‐mediated photomultiplication, resulting in a notable gain control up to ≈10 with a fast rise/fall response time (≈12/36 ns). Considering the figure of merit (FOM), EQE versus response time (or −3 dB bandwidth), the optimal CQD photodiode yields one of the highest FOMs among all previously reported solution‐processed nontoxic semiconductors comprising organics, perovskites, and CQDs in the NIR wavelength range.

Stable colloidal quantum dot-based infrared photodiode: multiple passivation strategy

Passivating {100} Facets of PbS Colloidal Quantum Dots via Perovskite Bridges for Sensitive and Stable Infrared Photodiodes

Excess Passivation of Large Colloidal Quantum Dots to Reduce Dark-Current Density for Near-Infrared Detection

Excess PbBr2 Passivation of Large PbS Colloidal Quantum Dots to Reduce Dark-Current Density for Near-Infrared Detection

Stability Enhancement of PbS Quantum Dots by Site-Selective Surface Passivation for Near-Infrared LED Application

In-situ surface patch-passivation via phosphorus oxygen bond for efficient PbS colloidal quantum dot infrared solar cells

Colloidal PbS Quantum Dot Photodiode Imager with Suppressed Dark Current

Surface Passivation by Congeneric Quantum Dots for High-Performance and Stable CsPbBr3-based Photodetectors

Enhanced Surface Passivation of Lead Sulfide Quantum Dots for Short-Wavelength Photodetectors

Surface passivation by congeneric quantum dots for high-performance and stable CsPbBr<sub>3</sub>-based photodetectors

Surface passivation by congeneric quantum dots for high-performance and stable CsPbBr 3 -based photodetectors

Ambient-Stable and High On/Off Ratio Near-Infrared Photodetector Based on Perovskite-Treated PbS Colloidal Quantum Dots

Electrode Engineering of Colloidal Quantum Dot Photodetectors Using a Self-Assembled Island-like LiF Interfacial Layer

Colloidal InAs Quantum Dot‐Based Infrared Optoelectronics Enabled by Universal Dual‐Ligand Passivation

Silicon Surface Passivation for Silicon-Colloidal Quantum Dot Heterojunction Photodetectors.

Probing and Controlling Surface Passivation of PbS Quantum Dot Solid for Improved Performance of Infrared Absorbing Solar Cells

High-Performance Colloidal Quantum Dot Photodiodes Via Suppressing Interface Defects

Double‐ended Passivator Enables Dark‐current‐suppressed Colloidal Quantum Dot Photodiodes for CMOS‐integrated Infrared Imagers

Bilayer PbS Quantum Dots for High-Performance Photodetectors.

Inorganic CsPbI3 Perovskite Coating on PbS Quantum Dot for Highly Efficient and Stable Infrared Light Converting Solar Cells

In situ passivation for high-quality PbS colloidal quantum dots synthesized using a PbBr2 precursor