Abstract:Solution-processed semiconductors have opened promising avenues for next-generation semiconductor and optoelectronic industries. Colloidal quantum dots (QDs) as one of the most typical materials are widely utilized for the design and development of light-emitting diodes, photodetectors, and solar cells. Recently, an emerging process of PbS QD ink has been employed to attain world record power conversion efficiency by surface passivation using a PbI2 ligand to form PbI2–PbS and the process optimization in the field of photovoltaics. However, the bonding and debonding of the ligands on the surface of PbS QDs are dynamic reversible processes in an ink environment. The uncoordinated Pb2+ defects induced by unbonded PbS QDs serve as the recombination sites. Thus, the present ink process leaves much room for the enhancement by surface passivation of PbS QDs. Herein, we devise an efficient strategy with a supplementary phenethylammonium iodide (PEAI) ligand for the formation of the PEAI–PbS interface in PbS QD ink-processed solar cells. This newly developed method can not only improve the passivation on the QD surface by iodine ions but also simultaneously enhance the carrier collection efficiency by a graded energy alignment between PbI2–PbS and PEAI–PbS layers. The corresponding power conversion efficiency of the optimized device has significantly increased by approximately 20% more than the control device. As a result, such a robust and efficient method regarded as a strategic candidate can overcome the bottleneck of imperfect passivation caused by a large specific surface area and loose bonding ligands, eventually promoting the industrial application of QDs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c08135?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c08135</a>.Absorbance results, description for detailed testing conditions, TEM images of OA–PbS QDs, XPS spectra of QD films about I 3d signal, FTIR data for QD films, device performances of PbS QDs by different supplemental treatment condition (ligands/concentration/annealing temperature/immersing time/solvents), AFM images of control and PEAI-QD films, XRD of QD films, SEM image of control and PEAI-QD films, UPS of ZnO and EDT–PbS QD films, TA results of control and PEAI-QD films, EIS spectra of the photovoltaic devices, and device performance as a function of CQD film thickness (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c08135/suppl_file/am0c08135_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Probing and Controlling Surface Passivation of PbS Quantum Dot Solid for Improved Performance of Infrared Absorbing Solar Cells

Optimizing Surface Passivation of n‐Type Quantum Dots for Efficient PbS Quantum Dot Solar Cells

Inorganic CsPbI3 Perovskite Coating on PbS Quantum Dot for Highly Efficient and Stable Infrared Light Converting Solar Cells

In-situ surface patch-passivation via phosphorus oxygen bond for efficient PbS colloidal quantum dot infrared solar cells

Passivation Strategy of Reducing Both Electron and Hole Trap States for Achieving High-Efficiency PbS Quantum-Dot Solar Cells with Power Conversion Efficiency over 12%

Passivation Via Atomic Layer Deposition Al2O3 for the Performance Enhancement of Quantum Dot Photovoltaics

Enhanced Mobility-Lifetime Products in Pbs Colloidal Quantum Dot Photovoltaics

Over 15% Efficiency PbS Quantum‐Dot Solar Cells by Synergistic Effects of Three Interface Engineering: Reducing Nonradiative Recombination and Balancing Charge Carrier Extraction

Organic Ligand Complementary Passivation to Colloidal-Quantum-Dot Surface Enables Efficient Infrared Solar Cells

Strong Coupling of Colloidal Quantum Dots via Self‐Assemble Passivation for Efficient Infrared Solar Cells

Enhanced Passivation and Carrier Collection in Ink-Processed PbS Quantum Dot Solar Cells via a Supplementary Ligand Strategy

Enhancing Electron and Hole Extractions for Efficient PbS Quantum Dot Solar Cells

Solution Annealing Induces Surface Chemical Reconstruction for High-Efficiency PbS Quantum Dot Solar Cells

Colloidal-Quantum-Dot Photovoltaics Using Atomic-Ligand Passivation

High Reduction of Interfacial Charge Recombination in Colloidal Quantum Dot Solar Cells by Metal Oxide Surface Passivation

Passivation Using Molecular Halides Increases Quantum Dot Solar Cell Performance.

14.1% CsPbI3 Perovskite Quantum Dot Solar Cells Via Cesium Cation Passivation

Optimizing Surface Chemistry of PbS Colloidal Quantum Dot for Highly Efficient and Stable Solar Cells via Chemical Binding

In Situ Synergistic Halogen Passivation of Semiconducting PbS Quantum Dot Inks for Efficient Photovoltaics.

Merging Passivation in Synthesis Enabling the Lowest Open‐Circuit Voltage Loss for PbS Quantum Dot Solar Cells

Efficient Interface and Bulk Passivation of PbS Quantum Dot Infrared Photodetectors by PbI2 Incorporation