Abstract:In this comprehensive study, we rigorously evaluated the applicability of amorphous indium gallium zinc oxide (a‐IGZO) thin films synthesized using atomic layer deposition (ALD) technology in the field of large‐area organic light‐emitting diode (OLED) TVs. The key term to display production is the distribution of device characteristics, and maintaining uniformity can improve productivity yield and product quality. The purpose of this paper is to present guidelines for early application in industry through the process variable exploration results of ALD deposition equipment. The process parameters studied are process pressure and oxygen partial pressure (PO 2 ). We have secured a method to secure device characteristics suitable for display technology through the correlation between a‐IGZO thin film characteristics and device characteristics through corresponding parameters. Our empirical data strongly demonstrate that the threshold voltage (V th ) stabilizes near 0.0 V and consistently achieves device mobility exceeding 15 cm 2 /Vs. In particular, this study shows that the variability of the Vth characteristic, which is limited to a narrow range of less than ±0.1V, is greatly reduced, and the mobility dispersion is also greatly reduced to less than ±1cm 2 /Vs. A deeper analytical exploration revealed that the pivotal factors affecting device performance are closely related to oxygen vacancies (V o ) and their dynamic interactions with oxygen molecules. These results will improve the uniformity of device characteristics, and it is believed that the introduction of ALD technology into future display technology will demonstrate improvements in the performance and quality of display products.

P‐13.11: Highly Efficient Electric‐Thermal Simulation for AMOLED Design

IR-Drop-Based Temperature Distribution in Large-Size AMOLED Panel

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

A New IR-Drop Model That Improves Effectively the Brightness Uniformity of an AMOLED Panel

A Method to Improve IR Drop Issue of Large-Size Top-Emission AMOLED

Power Consumption Model for AMOLED Display Panel Based on 2T-1C Pixel Circuit

Reflective 3D pixel configuration for enhancing efficiency of OLED displays

64‐5: Virtual ESD Failure Detection Methodology for Oxide TFT Based OLED Panels

The IR Drop Effect of 2T1C and 3T1C Driving Modes in Top Emission AMOLED

P-6.10: LTPS-TFT Process for OLED and some issues generated from the manufacturing

Transistor Technologies and Pixel Circuit Design for Efficient Active-Matrix Organic Light-Emitting Diode Displays

Simulation of Luminous Efficacy of AC Plasma-Display-Panel with Floating Electrodes

Eliminating Hysteresis Effects in Flexible Organic Light-Emitting Diodes

Ltps-Tft Pixel Circuit Compensating for Tft Threshold Voltage Shift and Ir-Drop on the Power Line for Amoled Displays

97‐3: Late‐News Paper: Enhanced IGZO TFT Performance with Atomic Layer Deposition Parameter Optimization for Large OLED Displays

P‐4.4: A Design to Improve the Uniformity of AMOLED Panel

12.2: High Performance AMOLED Pixel Circuit Using Interleaved Emit Signals Based on Low‐Temperature Poly‐Si and Oxide (LTPO) TFTs

P‐17: Design of AMOLED Pixel Circuit Using LTPO TFTs with Enhanced Reliability

48‐4: LTPO Technology Development for Enhanced Display Performance: Image Sticking Phenomena, Circuit Operation and Backplane Process Integration

Electrical and Optical Characteristics of a Color Alternating Current Plasma Display Panel with Floating Electrodes

P-21: Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor Technology for High-Resolution AMOLED Application