Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype
L. Paolozzi,M. Munker,R. Cardella,M. Milanesio,Y. Gurimskaya,F. Martinelli,A. Picardi,H. Rücker,A. Trusch,P. Valerio,F. Cadoux,R. Cardarelli,S. Débieux,Y. Favre,C.A. Fenoglio,D. Ferrere,S. Gonzalez-Sevilla,R. Kotitsa,C. Magliocca,T. Moretti,M. Nessi,A. Pizarro Medina,J. Sabater Iglesias,J. Saidi,M. Vicente Barreto Pinto,S. Zambito,G. Iacobucci
DOI: https://doi.org/10.1088/1748-0221/17/10/p10032
2022-10-21
Journal of Instrumentation
Abstract:The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a (NP) drift (NP) gain structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 μm pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a 55 Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the ^55Fe source limits the effective gain.
instruments & instrumentation