High detection efficiency silicon single-photon detector with a monolithic integrated circuit of active quenching and active reset

Yu-Qiang Fang,Kai Luo,Xing-Guo Gao,Gai-Qing Huo,Ang Zhong,Peng-Fei Liao,Pu Pu,Xiao-Hui Bao,Yu-Ao Chen,Jun Zhang,Jian-Wei Pan
DOI: https://doi.org/10.1063/5.0034458
2020-11-19
Abstract:Silicon single-photon detectors (SPDs) are key devices for detecting single photons in the visible wavelength range. Photon detection efficiency (PDE) is one of the most important parameters of silicon SPDs, and increasing PDE is highly required for many applications. Here, we present a practical approach to increase PDE of silicon SPD with a monolithic integrated circuit of active quenching and active reset (AQAR). The AQAR integrated circuit is specifically designed for thick silicon single-photon avalanche diode (SPAD) with high breakdown voltage (250-450 V), and then fabricated via the process of high-voltage 0.35-$\mu$m bipolarCMOS-DMOS. The AQAR integrated circuit implements the maximum transition voltage of ~ 68 V with 30 ns quenching time and 10 ns reset time, which can easily boost PDE to the upper limit by regulating the excess bias up to a high enough level. By using the AQAR integrated circuit, we design and characterize two SPDs with the SPADs disassembled from commercial products of single-photon counting modules (SPCMs). Compared with the original SPCMs, the PDE values are increased from 68.3% to 73.7% and 69.5% to 75.1% at 785 nm, respectively, with moderate increases of dark count rate and afterpulse probability. Our approach can effectively improve the performance of the practical applications requiring silicon SPDs.
Instrumentation and Detectors,Applied Physics,Quantum Physics
What problem does this paper attempt to address?
The problem this paper attempts to address is improving the Photon Detection Efficiency (PDE) of Silicon Single-Photon Detectors (SPD) in the visible light spectrum. Specifically, the authors propose a practical method to enhance the PDE of thick Silicon Single-Photon Avalanche Diodes (SPAD) by integrating Active Quenching and Active Reset (AQAR) circuits. ### Main Issues: 1. **Improving PDE**: Existing silicon SPDs require higher PDE for many applications, but traditional passive quenching methods have some limitations, such as lower maximum count rate (CRmax) and slower recovery time. 2. **Design and Implementation of AQAR Circuit**: To overcome these limitations, the authors designed and implemented a monolithically integrated AQAR circuit specifically for thick silicon SPADs with high breakdown voltages (250-450 V). ### Solution: - **AQAR Circuit Design**: This circuit can complete the quenching process within 30 nanoseconds and the reset process within 10 nanoseconds, significantly improving the PDE. - **Experimental Validation**: The authors conducted experimental validation using SPADs from commercial Single-Photon Counting Modules (SPCM). The results showed that the PDE increased from 68.3% to 73.7% and from 69.5% to 75.1%, with a moderate increase in dark count rate (DCR) and afterpulse probability (Pap). ### Experimental Results: - **PDE Improvement**: Compared to the original SPCM, the SPD using the AQAR circuit showed a relative increase in PDE of about 8%. - **Performance Enhancement**: Although there was an increase in DCR and Pap, the overall performance was significantly improved, making it suitable for applications requiring high PDE. In conclusion, this paper effectively improves the PDE of silicon SPDs by designing and implementing the AQAR circuit, providing a better solution for practical applications.