Photon counting 1060-nm hybrid photomultiplier with high quantum efficiency

R.A. La Rue,G.A. Davis,D. Pudvay,K.A. Costello,V.W. Aebi

DOI: https://doi.org/10.1109/55.748909

IF: 4.8157

1999-03-01

IEEE Electron Device Letters

Abstract:An ultra-low-noise, high-speed, hybrid photomultiplier tube sensitive from 900 to 1300 nm optical wavelength is described. The device, also known as an intensified photodiode (IPD), uses an active transferred electron (TE) photocathode with the quaternary In/sub .69/Ca/sub .31/As/sub .67/P/sub .33/ photo-absorbing layer and a GaAs Schottky avalanche photodiode (SAPD) anode. The detector has a combined electron bombarded and avalanche gain of over 15000 which is sufficient to overcome preamplifier noise and provide high internal counting efficiency of approximately 85%. At an active cathode bias of 1.5 V the room temperature cathode dark count rate is 6.67/spl times/10/sup 5//s. Cooling reduces this substantially corresponding to a dark current activation energy almost equal to the bandgap of the In/sub .69/Ca/sub .31/As/sub .67/P/sub .33/ layer.

engineering, electrical & electronic

What problem does this paper attempt to address?

This paper attempts to solve the problem of low - noise light detection in the near - infrared band (900 to 1300 nanometers). The traditional photomultiplier method usually uses an InGaAs photocathode, but this method has the problem of low quantum efficiency. The quantum efficiency of silicon avalanche photodiodes (APD) at a wavelength of 1060 nanometers is only 1 - 2%, and the internal counting efficiency is about 50%, which results in an actual quantum efficiency of less than 1%. In addition, the bandwidth of the detector and post - detection electronic devices must be far greater than the dark count rate at room temperature, otherwise photon counting will coincide with dark counting, resulting in signal loss. At the same time, the shot noise generated by the high dark count rate also limits the sensitivity of the detector.

To solve these problems, this paper proposes a new type of hybrid photomultiplier, namely the Intensified Photodiode (IPD), which uses an active Transferred - Electron (TE) photocathode and a GaAs Schottky Avalanche Photodiode (SAPD) anode. This design not only improves the quantum efficiency, but also minimizes the cathode dark count by optimizing the material parameters of the TE photocathode, thereby achieving an internal counting efficiency of over 85% and a total gain (a combination of electron bombardment and avalanche gain) of over 15000 at a wavelength of 1060 nanometers. These improvements enable the device to perform single - photon counting efficiently under low - noise conditions.