Abstract:To date, most surface acoustic wave (SAW) devices have been made from bulk piezoelectric materials, such as quartz, lithium niobate or lithium tantalite. These bulk materials are brittle, less easily integrated with electronics for control and signal processing, and difficult to realize multiple wave modes or apply complex electrode designs. Using thin film SAWs makes it convenient to integrate microelectronics and multiple sensing or microfluidics techniques into a lab-on-a-chip with low cost and multi-functions on various substrates (silicon, glass or polymer). In the work, aluminum nitride (AlN)-based SAW devices were fabricated and characterized for discrete microfluidic (or droplet based) applications. AlN films with a highly c -axis texture were deposited on silicon substrates using a magnetron sputtering system. The fabricated AlN/Si SAW devices had a Rayleigh wave mode at a frequency of 80.3 MHz (with an electromechanical coupling coefficient k 2 of 0.24 % and phase velocity v p of 5,139 m/s) and a higher-frequency-guided wave mode at 157.3 MHz (with a k 2 value of 0.22 % and v p of 10,067 m/s). Both modes present a large out of band rejection of ~15 dB and were successfully applied for microfluidic manipulation of liquid droplets, including internal streaming, pumping and jetting/nebulization, and their performance differences for microfluidic functions were discussed. A detailed investigation of the influences of droplet size (ranging from 3 to 15 μL) and RF input power (0.25–68 W) on microdroplet behavior has been conducted. Results showed that pumping and jetting velocities were increased with an increase of RF power or a decrease in droplet size.

A Comparison of the Saw Velocity for Thin Film Aluminum Nitride on Silicon by Line Focus Beam Acoustic Microscopy and Direct Transducer Measurements

High Quality Silicon-Based Aln Thin Films For Mems Application

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

Characterisation of Aluminium Nitride Films and Surface Acoustic Wave Devices for Microfluidic Applications

Theoretical Investigation of Acoustic Wave Devices Based on Different Piezoelectric Films Deposited on Silicon Carbide

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications

Acoustic and Optical Phonon Frequencies and Acoustic Phonon Velocities in Silicon-Doped Aluminum Nitride Thin Films

Alscn Thin Film Based Surface Acoustic Wave Devices with Enhanced Microfluidic Performance

Discrete Microfluidics Based on Aluminum Nitride Surface Acoustic Wave Devices

High-Performance SAW Resonators Based on Single-crystalline a-Plane AlN Thin Films on Sapphire Substrates

Theoretical and Experimental Study of High-Electromechanical-Coupling Surface Acoustic Wave Resonators Based on A-Plane (1120)al0.56sc0.44n Films

A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

Study on Strain and Piezoelectric Polarization of Aln Thin Films Grown on Si

Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniques

Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

Sputtered AIN Films for Semiconductor Lasers

Growth and Characterization of Polyimide-Supported AlN Films for Flexible Surface Acoustic Wave Devices

Quality-enhanced AlN Epitaxial Films Grown on C-Sapphire Using ZnO Buffer Layer for SAW Applications