AgNbO3 antiferroelectric film with high energy storage performance

Yanle Zhang,Xiaobo Li,Jianmin Song,Suwei Zhang,Jing Wang,Xiuhong Dai,Baoting Liu,Guoyi Dong,Lei Zhao

DOI: https://doi.org/10.1016/j.jmat.2021.02.018

IF: 8.589

2021-11-01

Journal of Materiomics

Abstract:Antiferroelectric materials with double hysteresis loops are attractive for energy storage applications, which are becoming increasingly important for power electronics nowadays. Among them, AgNbO3 based lead-free ceramics have attracted intensive interest as one of promising environmental-friendly candidates. However, most of the AgNbO3 based ceramics suffers from low dielectric breakdown strength (E b). The limitation of low E b is broken to some extent in this work. Here, AgNbO3 epitaxial films were fabricated by pulsed laser deposition, which possess high E b of 624 kV/cm. The (001)AgNbO3 epitaxial film reveals typical antiferroelectric hysteresis loops when the applied electric fields are over 300 kV/cm. A recoverable energy density of 5.8 J/cm3 and an energy efficiency of 55.8% are obtained at 600 kV/cm, which demonstrates the great promise of the AgNbO3 film for energy storage applications.

materials science, multidisciplinary,chemistry, physical,physics, applied