Energy storage performance and piezoelectric response of silver niobate antiferroelectric thin film

Zhixuan An,Yao Yao,Jing Wang,Jing Wang,Li-Feng Zhu,Lei Zhao

DOI: https://doi.org/10.1016/j.ceramint.2024.01.151

IF: 5.532

2024-02-23

Ceramics International

Abstract:AgNbO 3 -based antiferroelectric materials have attracted extensive attention in energy storage due to their double polarization-electric field hysteresis loops, but they always suffer from low breakdown strength ( E b ). Films with few defects and small thickness exhibit high breakdown strength, which helps to improve energy storage performance. In the present work, an AgNbO 3 film with a small thickness of ∼200 nm is prepared via pulsed laser deposition, which has a dense microstructure and a small average grain size of ∼34.5 nm. The AgNbO 3 film displays an antiferroelectric nature, as confirmed by the double polarization-electric field hysteresis loops at room temperature. The room temperature phase structure of the AgNbO 3 film determined by the dielectric behaviour is the antiferroelectric M 2 phase. Due to the small thickness and fine grain size, a high E b of 1200 kV/cm is obtained, which boosts a recoverable energy storage density ( W rec ) of 9.3 J/cm 3 and an energy efficiency ( η ) of 63.7 % in the AgNbO 3 film. In addition, W rec exhibits good temperature stability at 30–120 °C. The AgNbO 3 film shows an obvious piezoelectric response after the electric field-induced antiferroelectric-ferroelectric phase transition as confirmed by piezoresponse force microscopy. These results provide guidance for the development of AgNbO 3 antiferroelectric films and devices with good energy storage performance.

materials science, ceramics