Abstract:This work explores the applicability of atomic layer deposition (ALD) in producing highly oriented crystalline gallium oxide films on foreign substrates at low thermal budgets. The effects of substrate, deposition temperature, and annealing process on formation of crystalline gallium oxide are discussed. The Ga2O3 films exhibited a strong preferred orientation on the c-plane sapphire substrate. The onset of formation of crystalline gallium oxide is determined, at which only two sets of planes, i.e., α-Ga2O3 (006) and β-Ga2O3 (4̅02), are present parallel to the surface. More specifically, this work reports, for the first time, that epitaxial gallium oxide films on sapphire start to form at deposition temperatures ≥ 190 °C by using an optimized plasma-enhanced ALD process such that α-Ga2O3 (006)∥α-Al2O3 (006) and β-Ga2O3 (2̅01)∥α-Al2O3 (006). Both α-Ga2O3 (006) and β-Ga2O3 (2̅01) planes are polar planes (i.e., consisting of only one type of atom, either Ga or O) and, therefore, favorable to form by ALD at such low deposition temperatures. Ellipsometry and van der Pauw measurements confirmed that the crystalline films have optical and electrical properties close to bulk gallium oxide. The film grown at 277 °C was determined to have superior properties among as-deposited films. Using TEM to locate α-Ga2O3 and β-Ga2O3 domains in the as-deposited crystalline films, we proposed a short annealing scheme to limit the development of α-Ga2O3 domains in the film and produce pure β-Ga2O3 films via an energy-efficient process. A pure β-Ga2O3 phase on sapphire with β-Ga2O3 (2̅01)∥α-Al2O3 (006) was successfully achieved by using the proposed process at the low annealing temperature of 550 °C preceded by the low deposition temperature of 190 °C. The results of this work enable epitaxial growth of gallium oxide thin films, with superior material properties offered by ALD, not only with potential applications as a high-performance material in reducing global energy consumption but also with an energy-efficient fabrication process.

Deposition of Ga2O3 thin films by liquid metal target sputtering

Deposition and photoluminescence of zinc gallium oxide thin films with varied stoichiometry made by reactive magnetron co-sputtering

Low Temperature Deposition of Ga2O3 Films on Sapphire and Epi-Gan Substrates

Compact Ga2O3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

High Crystallization Quality beta-Ga2O3 Films Prepared by Chemical Vapor Deposition

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Structure and Properties of Gallium-Oxide Films Produced by High-Frequency Magnetron-Assisted Deposition

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Heterogrowth of -(Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>)<sub>2</sub>O<sub>3</sub > Thin Films on Sapphire Substrates

Deposition and Optical Characterization of Sputter Deposited p-Type Delafossite CuGaO2 Thin Films Using Cu2O and Ga2O3 Targets

Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

Optimized Growth of Gallium Oxide Thin Films Using Different Synthesis Processes

Characterization of Gallium Oxide/glass thin films grown by RF magnetron sputtering

Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy

Structural, optical and morphological evolution of Ga2O3/Al2O3 (0001) films grown at various temperatures by pulsed laser deposition

Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition

Growth and characterization of Ta-doped Ga2O3 films deposited by magnetron sputtering

Low-temperature deposition of β-Ga 2 O 3 thin films employing in situ pulsed laser-assisted RF sputtering system

Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling