Abstract:In this work, synchrotron X‐ray diffraction, capacitance‐voltage measurements, and piezoresponse force microscopy imaging are used to examine the polarization wake‐up phenomenon that exists in ferroelectric capacitors with Hf0.5Zr0.5O2 (HZO) thin films. These measurements strongly demonstrate that polarization wake‐up results from a field‐induced phase change in the HZO films from an initially‐present tetragonal phase to the ferroelectric orthorhombic phase. As an emerging nonvolatile memory technology, HfO2‐based ferroelectrics exhibit excellent compatibility with silicon CMOS process flows; however, the reliability of polarization switching in these materials remains a major challenge. During repeated field programming and erase of the polarization state of initially pristine HfO2‐based ferroelectric capacitors, the magnitude of the measured polarization increases, a phenomenon known as "wake‐up". In this study, the authors attempt to understand what causes the wake‐up effect in Hf0.5Zr0.5O2 (HZO) capacitors using nondestructive methods that probe statistically significant sample volumes. Synchrotron X‐ray diffraction reveals a concerted shift in HZO Bragg peak position as a function of polarization switching cycle number in films prepared under conditions such that they exhibit extremely large (≈3000%) wake‐up. In contrast, a control sample with insignificant wake‐up shows no such peak shift. Capacitance – voltage measurements show evolution in the capacitance loop with switching cycle number for the wake‐up sample and no change for the control sample. Piezoresponse force microscopy measurements are utilized to visualize the domain switching with wake‐up. The combination of these observations clearly demonstrates that wake‐up is caused by a field‐driven phase transformation of the tetragonal phase to the metastable ferroelectric orthorhombic phase during polarization switching of HZO capacitors.

RF Characterization of Ferroelectric MOS Capacitors

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

Small Signal Capacitance in Ferroelectric HZO: Mechanisms and Physical Insights

Real-Time Polarization Switch Characterization of HfZrO4 for Negative Capacitance Field-Effect Transistor Applications

Effect of thickness scaling on the switching dynamics of ferroelectric HfO2–ZrO2 capacitors

Visualizing Ferroelectric Uniformity of Hf1- xZr x O2 Films Using X-ray Mapping

Switching Dynamics of Ferroelectric HfO2-ZrO2 with Various ZrO2 Contents

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2

Temperature‐Dependent Phase Transitions in HfxZr1‐xO2 Mixed Oxides: Indications of a Proper Ferroelectric Material

Fabrication and characteristics of ZnO MOS capacitors with high- K HfO 2 gate dielectrics

Stable Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Within a Broad Working Temperature Range

High Performance and Nearly Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitor Realized by Middle Layer Strategy with BEOL Compatibility

Field‐Induced Ferroelectric Phase Evolution During Polarization "Wake‐Up" in Hf0.5Zr0.5O2 Thin Film Capacitors

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

Changing the properties of Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ during cyclic repolarization of ferroelectric capacitors with different electrode materials

Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors