High Capacitance Porous Ruthenium Nitride Films with High Rate Capability for Micro‐Supercapacitors

Khac Huy Dinh,Grace Whang,Marielle Huve,David Troadec,Antoine Barnabé,Bruce Dunn,Pascal Roussel,Christophe Lethien
DOI: https://doi.org/10.1002/smll.202402607
IF: 13.3
2024-06-12
Small
Abstract:Here the study shows how to control the film morphology and composition by tuning temperature, gas atmosphere, and the deposition pressure in the magnetron sputtering process. The correlation between the morphology, structure, and electrochemical properties of the RuN films is investigated. The demand for high‐performance energy storage devices to power Internet of Things applications has driven intensive research on micro‐supercapacitors (MSCs). In this study, RuN films made by magnetron sputtering as an efficient electrode material for MSCs are investigated. The sputtering parameters are carefully studied in order to maximize film porosity while maintaining high electrical conductivity, enabling a fast charging process. Using a combination of advanced techniques, the relationships among the morphology, structure, and electrochemical properties of the RuN films are investigated. The films are shown to have a complex structure containing a mixture of crystallized Ru and RuN phases with an amorphous oxide layer. The combination of high electrical conductivity and pseudocapacitive charge storage properties enabled a 16 μm‐thick RuN film to achieve a capacitance value of 0.8 F cm−2 in 1 m KOH with ultra‐high rate capability.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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