Abstract:The field-effect transistors (FETs) based on reduced graphene oxide (rGO) with SiO 2 , porous silicon (PS), and oxidized porous silicon (PS ox ) supporting layers were obtained. The influence of charged impurities in the silicon substrate and electrically active defects in the support layers on the electrical properties of the FETs was studied based on the capacitance-voltage characteristic analysis. Localized electron states in the SiO 2 , PS, and PS ox supporting layers that affect the charge transfer in the rGO-based FETs were determined using thermally stimulated depolarization spectroscopy. The influence mechanisms of various supporting layers on the electrical characteristics of the obtained FETs are discussed.

Effect of supporting layer on electrical characteristics of field-effect transistor based on reduced graphene oxide film