Non-static ground state in SmB6: a form of time crystal?

Qi Wu,Liling Sun

DOI: https://doi.org/10.48550/arXiv.1611.02962

2016-11-09

Strongly Correlated Electrons

Abstract:Here we propose the existence of a non-static ground state in the Kondo insulator SmB6, with a unique accompany-type valence fluctuation of Sm ions in its bulk. Whether SmB6 is a fashion of time crystal is an intriguing issue.

What problem does this paper attempt to address?

Additional Energy Scale in SmB6 at Low-Temperature

L. Jiao,S. Rößler,D. J. Kim,L. H. Tjeng,Z. Fisk,F. Steglich,S. Wirth

DOI: https://doi.org/10.1038/ncomms13762

IF: 16.6

2016-01-01

Nature Communications

Abstract:Topological insulators give rise to exquisite electronic properties because of their spin-momentum locked Dirac-cone-like band structure. Recently, it has been suggested that the required opposite parities between valence and conduction band along with strong spin-orbit coupling can be realized in correlated materials. Particularly, SmB6 has been proposed as candidate material for a topological Kondo insulator. Here we observe, by utilizing scanning tunnelling microscopy and spectroscopy down to 0.35 K, several states within the hybridization gap of about ±20 meV on well characterized (001) surfaces of SmB6. The spectroscopic response to impurities and magnetic fields allows to distinguish between dominating bulk and surface contributions to these states. The surface contributions develop particularly strongly below about 7 K, which can be understood in terms of a suppressed Kondo effect at the surface. Our high-resolution data provide insight into the electronic structure of SmB6, which reconciles many current discrepancies on this compound.
Surface and Electronic Structure of Smb6 Through Scanning Tunneling Microscopy

S. Roessler,Lin Jiao,D. J. Kim,S. Seiro,K. Rasim,F. Steglich,L. H. Tjeng,Z. Fisk,S. Wirth

DOI: https://doi.org/10.1080/14786435.2016.1171414

2016-01-01

The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics

Abstract:SmB_6, a so called Kondo insulator, is recently discussed as a candidate material for a strong topological insulator. We present detailed atomically resolved topographic information on the (001) surface from more than a dozen SmB_6 samples. Atomically flat, in situ cleaved surfaces often exhibit B- and Sm-terminated surfaces as well as reconstructed and non-reconstructed areas coexisting on different length scales. The terminations are unambiguously identified. In addition, electronic inhomogeneities are observed which likely result from the polar nature of the (001) surface and may indicate an inhomogeneous Sm valence at the surface of SmB_6. In addition, atomically resolved topographies on a (110) surface are discussed.
Hybridization, Inter-Ion Correlation, and Surface States in the Kondo Insulator SmB6

Xiaohang Zhang,N. P. Butch,P. Syers,S. Ziemak,Richard L. Greene,J. Paglione

DOI: https://doi.org/10.1103/PhysRevX.3.011011

2013-01-30

Abstract:As an exemplary Kondo insulator, SmB6 has been studied for several decades; however, direct evidence for the development of the Kondo coherent state and the evolution of the electronic structure in the material has not been obtained due to the rather complicated electronic and thermal transport behavior. Recently, these open questions attracted increasing attention as the emergence of a time-reversal invariant topological surface state in the Kondo insulator has been suggested. Here, we use point-contact spectroscopy to reveal the temperature dependence of the electronic states in SmB6. We demonstrate that SmB6 is a model Kondo insulator: below 100 K, the conductance spectra reflect the Kondo hybridization of Sm ions, but below ~ 30 K, signatures of inter-ion correlation effects clearly emerge. Moreover, we find evidence that the low-temperature insulating state of this exemplary Kondo lattice compound harbors conduction states on the surface, in support of predictions of nontrivial topology in Kondo insulators.

Strongly Correlated Electrons,Materials Science
Direct Observation of the Spin Texture in SmB6 As Evidence of the Topological Kondo Insulator

N. Xu,P. K. Biswas,J. H. Dil,R. S. Dhaka,G. Landolt,S. Muff,C. E. Matt,X. Shi,N. C. Plumb,M. Radović,E. Pomjakushina,K. Conder,A. Amato,S. V. Borisenko,R. Yu,H.-M. Weng,Z. Fang,X. Dai,J. Mesot,H. Ding,M. Shi

DOI: https://doi.org/10.1038/ncomms5566

IF: 16.6

2014-01-01

Nature Communications

Abstract:Topological Kondo insulators have been proposed as a new class of topological insulators in which non-trivial surface states reside in the bulk Kondo band gap at low temperature due to strong spin-orbit coupling. In contrast to other three-dimensional topological insulators, a topological Kondo insulator is truly bulk insulating. Furthermore, strong electron correlations are present in the system, which may interact with the novel topological phase. By applying spin- and angle-resolved photoemission spectroscopy, here we show that the surface states of SmB6 are spin polarized. The spin is locked to the crystal momentum, fulfilling time reversal and crystal symmetries. Our results provide strong evidence that SmB6 can host topological surface states in a bulk insulating gap stemming from the Kondo effect, which can serve as an ideal platform for investigating of the interplay between novel topological quantum states with emergent effects and competing orders induced by strongly correlated electrons.
Surface and Bulk Electronic Structure of the Strongly Correlated System SmB6and Implications for a Topological Kondo Insulator

N. Xu,X. Shi,P. K. Biswas,C. E. Matt,R. S. Dhaka,Y. Huang,N. C. Plumb,M. Radovic,J. H. Dil,E. Pomjakushina,K. Conder,A. Amato,Z. Salman,D. McK. Paul,J. Mesot,H. Ding,M. Shi

DOI: https://doi.org/10.1103/physrevb.88.121102

IF: 3.7

2013-01-01

Physical Review B

Abstract:Recent theoretical calculations and experimental results suggest that the strongly correlated material SmB6 may be a realization of a topological Kondo insulator. We have performed an angle-resolved photoemission spectroscopy study on SmB6 in order to elucidate elements of the electronic structure relevant to the possible occurrence of a topological Kondo insulator state. The obtained electronic structure in the whole three-dimensional momentum space reveals one electron-like 5d bulk band centered at the X point of the bulk Brillouin zone that is hybridized with strongly correlated f electrons, as well as the opening of a Kondo band gap (Delta(B) similar to 20 meV) at low temperature. In addition, we observe electron-like bands forming three Fermi surfaces at the center Gamma point and boundary (X) over bar point of the surface Brillouin zone. These bands are not expected from calculations of the bulk electronic structure, and their observed dispersion characteristics are consistent with surface states. Our results suggest that the unusual low-temperature transport behavior of SmB6 is likely to be related to the pronounced surface states sitting inside the band hybridization gap and/or the presence of a topological Kondo insulating state.
Bulk Fermi Surface of Charge-Neutral Excitations in SmB_{6} or Not: A Heat-Transport Study.

Y. Xu,S. Cui,J. K. Dong,D. Zhao,T. Wu,X. H. Chen,Kai Sun,Hong Yao,S. Y. Li

DOI: https://doi.org/10.1103/physrevlett.116.246403

2017-01-01

Abstract:Recently, there have been increasingly hot debates on whether a bulk Fermi surface of charge-neutral excitations exists in the topological Kondo insulator SmB_{6}. To unambiguously resolve this issue, we perform the low-temperature thermal conductivity measurements of a high-quality SmB_{6} single crystal down to 0.1 K and up to 14.5 T. Our experiments show that the residual linear term of thermal conductivity at the zero field is zero, within the experimental accuracy. Furthermore, the thermal conductivity is insensitive to the magnetic field up to 14.5 T. These results demonstrate the absence of fermionic charge-neutral excitations in bulk SmB_{6}, such as scalar Majorana fermions or spinons and, thus, exclude the existence of a bulk Fermi surface suggested by a recent quantum oscillation study of SmB_{6}. This puts a strong constraint on the explanation of the quantum oscillations observed in SmB_{6}.
Emergence of a coherent in-gap state in SmB6 Kondo insulator revealed by scanning tunneling spectroscopy

Wei Ruan,Cun Ye,Minghua Guo,Fei Chen,Xianhui Chen,Guangming Zhang,Yayu Wang

DOI: https://doi.org/10.1103/PhysRevLett.112.136401

2014-03-01

Abstract:We use scanning tunneling microscopy to investigate the (001) surface of cleaved SmB6 Kondo insulator. Variable temperature dI/dV spectroscopy up to 60 K reveals a gap-like density of state suppression around the Fermi level, which is due to the hybridization between the itinerant Sm 5d band and localized Sm 4f band. At temperatures below 40 K, a sharp coherence peak emerges within the hybridization gap near the lower gap edge. We propose that the in-gap resonance state is due to a collective excitation in magnetic origin with the presence of spin-orbital coupling and mixed valence fluctuations. These results shed new lights on the electronic structure evolution and transport anomaly in SmB6.

Materials Science,Strongly Correlated Electrons
SmB6: A material with anomalous energy distribution function of charge carriers?

I. Batko,M. Batkova

DOI: https://doi.org/10.1016/j.matlet.2018.10.098

2018-07-23

Abstract:We argue that because of valence-fluctuation caused dynamical changes (fluctuations) of impurity energies in an impurity band of valence fluctuating semiconductors both occupied and unoccupied sites can be found in the impurity band above as well as below the Fermi level even in the ground state. As a consequence, the ground state energy distribution function of the subsystem of localized charge carriers for valence fluctuating semiconductors is qualitatively different than one for conventional semiconductors at T = 0 K, what sheds new light on interpretation of experimental results of valence fluctuating semiconductors, e.g. SmB6 and YbB12, at lowest temperatures.

Strongly Correlated Electrons
Emergence of a Coherent In-Gap State in the SmB6 Kondo Insulator Revealed by Scanning Tunneling Spectroscopy.

Wei Ruan,Cun Ye,Minghua Guo,Fei Chen,Xianhui Chen,Guang-Ming Zhang,Yayu Wang

DOI: https://doi.org/10.1103/physrevlett.112.136401

2014-01-01

Abstract:We use scanning tunneling microscopy to investigate the (001) surface of a cleaved SmB6 Kondo insulator. Variable temperature dI/dV spectroscopy up to 60 K reveals a gaplike density of state suppression around the Fermi level, which is due to the hybridization between the itinerant Sm 5d band and localized Sm 4f band. At temperatures below 40 K, a sharp coherence peak emerges within the hybridization gap near the lower gap edge. We propose that the in-gap resonance state is due to a collective excitation in magnetic origin with the presence of spin-orbital coupling and mixed valence fluctuations. These results shed new light on the electronic structure evolution and transport anomaly in SmB6.
Bulk Rotational Symmetry Breaking in Kondo Insulator SmB_{6}

Z. Xiang,B. Lawson,T. Asaba,C. Tinsman,Lu Chen,C. Shang,X. H. Chen,Lu Li

DOI: https://doi.org/10.1103/physrevx.7.031054

2018-01-01

Abstract:The Kondo insulator samarium hexaboride (SmB6) has been intensely studied in recent years as a potential candidate of a strongly correlated topological insulator. One of the most exciting phenomena observed in SmB6 is the clear quantum oscillations appearing in magnetic torque at a low temperature despite the insulating behavior in resistance. These quantum oscillations show multiple frequencies and varied effective masses. The origin of quantum oscillation is, however, still under debate with evidence of both two-dimensional Fermi surfaces and three-dimensional Fermi surfaces. Here, we carry out angle-resolved torque magnetometry measurements in a magnetic field up to 45 T and a temperature range down to 40 mK. With the magnetic field rotated in the (010) plane, the quantum oscillation frequency of the strongest oscillation branch shows a fourfold rotational symmetry. However, in the angular dependence of the amplitude of the same branch, this fourfold symmetry is broken and, instead, a twofold symmetry shows up, which is consistent with the prediction of a two-dimensional Lifshitz-Kosevich model. No deviation of Lifshitz-Kosevich behavior is observed down to 40 mK. Our results suggest the existence of multiple light-mass surface states in SmB6, with their mobility significantly depending on the surface disorder level.
Anomalous Quantum Oscillations and Evidence for a Non-Trivial Berry Phase in SmSb

Fan Wu,Chunyu Guo,Michael Smidman,Jinglei Zhang,Ye Chen,John Singleton,Huiqiu Yuan

DOI: https://doi.org/10.1038/s41535-019-0161-4

IF: 6.856

2019-01-01

npj Quantum Materials

Abstract:Topologically non-trivial electronic structures can give rise to a range of unusual physical phenomena, and the interplay of band topology with other effects such as electronic correlations and magnetism requires further exploration. The rare earth monopnictides X(Sb,Bi) (X = lanthanide) are a large family of semimetals where these different effects may be tuned by the substitution of rare-earth elements. Here we observe anomalous behavior in the quantum oscillations of one member of this family, antiferromagnetic SmSb. The analysis of Shubnikov-de Haas (SdH) oscillations provides evidence for a non-zero Berry phase, indicating a non-trivial topology of the α-band. Furthermore, striking differences are found between the temperature dependence of the amplitudes of de Haas-van Alphen effect oscillations, which are well fitted by the Lifshitz-Kosevich (LK) formula across the measured temperature range, and those from SdH measurements which show a significant disagreement with LK behavior at low temperatures. Our findings of unusual quantum oscillations in an antiferromagnetic, mixed valence semimetal with a possible non-trivial band topology can provide an opportunity for studying the interplay between topology, electronic correlations and magnetism.
Exploration of strongly correlated states in SmB6 through a comparison of its two-coil pick-up response to that of Bi2Se3

Sayantan Ghosh,Sugata Paul,Amit Jash,Zachary Fisk,S. S. Banerjee

2023-06-24

Abstract:Earlier studies on the Kondo insulator SmB6 reveal the presence of a bulk Kondo insulating gap between 30 - 50 K, and the emergence of a conducting surface state only below 4 K. Here, we compare the two-coil mutual inductance pick-up response of SmB6 single crystal with that of a conventional topological insulator (TI), Bi2Se3 single crystal. From these studies we identify three distinct temperature regimes for SmB6, viz., (i) T >= T*(~ 66 K), (ii) (40 K~) T_g <= T < T*, and (iii) T < T_g. At T* in SmB6, we observe a peak in the temperature-dependent AC pickup signal which corresponds to the peak in the broad hump feature in the bulk DC susceptibility measurements and features in the resistivity measurements. A dip in the pickup signal at T_g in SmB6 correlates with the evidence for the opening of a bulk Kondo gap in transport measurements. Our study of the pickup signal in SmB6 suggests the presence of a thin (submicron order thickness) high conducting surface layer from a temperature just below T_g. In this T regime in SmB6, the pickup signal shows a distinct square root frequency (f) dependence compared to the linear f dependence found in Bi2Se3. Across all the different T regimes, distinct AC frequency dependence and scaling properties are observed. Our results suggest that above T*, weak exchange interactions cause electrons to scatter from random ion sites. Electronic correlations gradually strengthen with the onset of Kondo like hybridization, setting in from below T*, and at T_g, a strongly correlated Kondo gap opens up in the bulk of the material. The appearance of the thin high conducting surface layer is nearly coincident with the onset of bulk Kondo insulating state below T_g in SmB6.

Strongly Correlated Electrons
On the Chemistry and Physical Properties of Flux and Floating Zone Grown SmB6 Single Crystals

W. A. Phelan,S. M. Koohpayeh,P. Cottingham,J. A. Tutmaher,J. C. Leiner,M. D. Lumsden,C. M. Lavelle,X. P. Wang,C. Hoffmann,M. A. Siegler,T. M. McQueen

DOI: https://doi.org/10.48550/arXiv.1510.07612

2015-10-27

Abstract:Recent theoretical and experimental findings suggest that the long-known but not well understood low temperature resistance plateau of SmB6 may originate from protected surface states arising from a topologically non-trivial bulk band structure having strong Kondo hybridization. Yet other studies have ascribed this feature to impurity phases, sample vacancies, and surface reconstructions. Given the typical methods used to prepare SmB6 single crystals, the flux and floating zone procedures, these ascriptions should not be taken lightly. Here, we demonstrate how compositional variations and observable amounts of impurity phases in SmB6 crystals grown by floating zone and flux affect the physical properties. From neutron diffraction and X-ray computed tomography experiments, we observe that a 154Sm11B6 crystal prepared using aluminum flux contains co-crystallized, epitaxial aluminum. A large, nearly stoichiometric crystal of SmB6 was successfully grown using the float-zone technique; upon continuing the zone melting, samarium vacancies are introduced. These samarium vacancies drastically alter the resistance and plateauing magnitude of the low temperature resistance compared to stoichiometric SmB6. These results highlight that small presences of impurity phases and compositional variations must be considered when collecting and analyzing physical property data of SmB6. Finally, a more accurate samarium-154 coherent neutron scattering length value, 8.9(1) fm, is reported.

Strongly Correlated Electrons
Magnetoresistance Evidence of A Surface State and A Field-Dependent Insulating State in the Kondo Insulator Smb6

F. Chen,C. Shang,Z. Jin,D. Zhao,Y. P. Wu,Z. J. Xiang,Z. C. Xia,A. F. Wang,X. G. Luo,T. Wu,X. H. Chen

DOI: https://doi.org/10.1103/physrevb.91.205133

2015-01-01

Abstract:Recently the resistance saturation at low temperature in the Kondo insulator SmB6, a long-standing puzzle in condensed matter physics, was proposed to originate from a topological surface state. Here we systematically studied the magnetoresistance of SmB6 at low temperature up to 55 T. For temperature decreasing below 16 K, the temperature-dependent magnetoresistance exhibits a negative magnetoresistance, while the angular-dependent magnetoresistance shows a fourfold symmetry. Below 5 K, both temperature-and angular-dependent magnetoresistances show a similar crossover behavior in which the negative magnetoresistance is strongly suppressed and a twofold angular-dependent magnetoresistance appears. Furthermore, the angular-dependent magnetoresistance on a different crystal face confirms a two-dimensional surface state as the origin of magnetoresistance crossover below 5 K. Based on a two-channels model consisting of both surface and bulk states, the critical magnetic field (H-c) of 125 T for field-dependent insulating behavior is extracted from our temperature-dependent resistance under different magnetic fields. Our results have important implications in understanding the novel low-temperature transport behavior in SmB6.
Ground state anomalies in SmB6

Anup Pradhan Sakhya,Kalobaran Maiti

DOI: https://doi.org/10.1038/s41598-020-58172-7

2020-01-27

Abstract:SmB6 has drawn much attention in recent times due to the discovery of anomalies in its ground state properties as well as prediction of topologically protected gapless surface states. Varied theories have been proposed to capture the ground state anomalies. Here, we studied the electronic structure of SmB6 employing density functional theory using different exchange correlation potentials, spin-orbit coupling and electron correlation strength. We discover that a suitable choice of interaction parameters such as spin-orbit coupling, electron correlation strength and exchange interaction within the generalized gradient approximation provides a good description of the spectral functions observed in the angle-resolved photoemission spectroscopy (ARPES) studies. The Fermi surface plots exhibit electron pockets around X-point and hole pockets around ΓX line having dominant Sm 4f character. These observations corroborate well with the recent experimental results involving quantum oscillation measurements, ARPES, etc. In addition to primarily Sm 4f contributions observed at the Fermi level, the results exhibit significantly large contribution from B 2p states compared to weak Sm 5d contributions. This suggests important role of B 2p - Sm 4f hybridization in the exotic physics of this system.
Correlation Induced Magnetic Topological Phases in Mixed-Valence Compound SmB6

Huimei Liu,Moritz M. Hirschmann,George A. Sawatzky,Giniyat Khaliullin,Andreas P. Schnyder

DOI: https://doi.org/10.1103/PhysRevResearch.5.L042028

2023-11-29

Abstract:SmB6 is a mixed-valence compound with flat f-electron bands that have a propensity to magnetism. Here, using a realistic Gamma8 quartet model, we investigate the dynamical spin susceptibility and describe the in-gap collective mode observed in neutron scattering experiments. We show that as the Sm valence increases with pressure, the magnetic correlations enhance and SmB6 undergoes a first-order phase transition into a metallic antiferromagnetic state, whose symmetry depends on the model parameters. The magnetic orderings give rise to distinct band topologies: while the A-type order leads to an overlap between valence and conduction bands in the form of Dirac nodal lines, the G-type order has a negative indirect gap with weak Z2 indices. We also consider the spin polarized phase under a strong magnetic field, and find that it exhibits Weyl points as well as nodal lines close to the Fermi level. The magnetic phases show markedly different surface states and tunable bulk transport properties, with important implications for experiments. Our theory predicts that a magnetic order can be stabilized also by lifting the Gamma8 cubic symmetry, thus explaining the surface magnetism reported in SmB6.

Strongly Correlated Electrons
Anomalous quantum oscillations and a non-trivial Berry phase in SmSb

Fan Wu,C. Y. Guo,M. Smidman,J. L. Zhang,Y. Chen,John Singleton,H. Q. Yuan

2018-01-01

Abstract:We provide evidence for anomalous behavior in the quantum oscillations of the antiferromagnetic semimetal SmSb. Magnetotransport measurements in high magnetic fields reveal that SmSb has a non-trivial $pi$ Berry phase inferred from the Landau index analysis of Shubnikov-de Haas (SdH) oscillations. Furthermore, striking differences are found between the temperature dependence of the amplitudes of de Haas-van Alphen effect oscillations, which are well fitted by the Lifshitz-Kosevich (LK) formula across the measured temperature range, and those from SdH measurements which show a significant disagreement with LK behavior at low temperatures. Our findings of unusual quantum oscillations in an antiferromagnetic, mixed valence semimetal with a non-trivial Berry phase can provide an opportunity for studying the interplay between topology, electronic correlations and magnetism.
Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6

F. Chen,C. Shang,Z. Jin,D. Zhao,Y. P. Wu,Z. J. Xiang,Z. C. Xia,A. F. Wang,X. G. Luo,T. Wu,X. H. Chen

DOI: https://doi.org/10.48550/arXiv.1309.2378

2015-03-27

Abstract:Recently, the resistance saturation at low temperature in Kondo insulator SmB6, a long-standing puzzle in condensed matter physics, was proposed to originate from topological surface state. Here,we systematically studied the magnetoresistance of SmB6 at low temperature up to 55 Tesla. Both temperature- and angular-dependent magnetoresistances show a similar crossover behavior below 5 K. Furthermore, the angular-dependent magnetoresistance on different crystal face confirms a two-dimensional surface state as the origin of magnetoresistances crossover below 5K. Based on two-channels model consisting of both surface and bulk states, the field-dependence of bulk gap with critical magnetic field (Hc) of 196 T is extracted from our temperature-dependent resistance under different magnetic fields. Our results give a consistent picture to understand the low-temperature transport behavior in SmB6, consistent with topological Kondo insulator scenario.

Strongly Correlated Electrons,Materials Science
Magnetic and Defect Probes of the SmB6 Surface State

Lin Jiao,Sahana Roessler,Deepa Kasinathan,Priscila F. S. Rosa,Chunyu Guo,Huiqiu Yuan,Chao-Xing Liu,Zachary Fisk,Frank Steglich,Steffen Wirth

DOI: https://doi.org/10.1126/sciadv.aau4886

IF: 13.6

2018-01-01

Science Advances

Abstract:The impact of nonmagnetic and magnetic impurities on topological insulators is a central focus concerning their fundamental physics and possible spintronics and quantum computing applications. Combining scanning tunneling spectroscopy with transport measurements, we investigate, both locally and globally, the effect of nonmagnetic and magnetic substituents in SmB 6 , a predicted topological Kondo insulator. Around the so-introduced substitutents and in accord with theoretical predictions, the surface states are locally suppressed with different length scales depending on the substituent’s magnetic properties. For sufficiently high substituent concentrations, these states are globally destroyed. Similarly, using a magnetic tip in tunneling spectroscopy also resulted in largely suppressed surface states. Hence, a destruction of the surface states is always observed close to atoms with substantial magnetic moment. This points to the topological nature of the surface states in SmB 6 and illustrates how magnetic impurities destroy the surface states from microscopic to macroscopic length scales.
Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB6 nanowires

Yugui Cui,Yi Chu,Zhencun Pan,Yingjie Xing,Shaoyun Huang,Hongqi Xu

DOI: https://doi.org/10.1039/d1nr07047a

IF: 6.7

2021-12-16

Nanoscale

Abstract:SmB6, which opens up an insulating bulk gap due to hybridization between itinerant d-electrons and localized f-electrons below a critical temperature, turns out to be a topological Kondo insulator possessing exotic conducting states on its surface. However, measurement of the surface-states in SmB6 draws controversial conclusions, depending on the growth methods and experimental techniques used. Herein, we report anisotropic magnetoresistance (AMR) observed in the Kondo energy gap of a single SmB6 nanowire that is immune to magnetic dopant pollution and features a square cross-section to show high-symmetry crystal facets. The AMR clearly shows a cosine function of included angle θ between magnetic field and measuring current with a period of π. The positive AMR is interpreted by anisotropically lifting the topological protection of spin-momentum inter-locking surface-states by rotating the in-plane magnetic field, which, therefore, provides the transport evidence that supports the topologically nontrivial nature of the SmB6 surface-states.

Non-static ground state in SmB6: a form of time crystal?

Additional Energy Scale in SmB6 at Low-Temperature

Surface and Electronic Structure of Smb6 Through Scanning Tunneling Microscopy

Hybridization, Inter-Ion Correlation, and Surface States in the Kondo Insulator SmB6

Direct Observation of the Spin Texture in SmB6 As Evidence of the Topological Kondo Insulator

Surface and Bulk Electronic Structure of the Strongly Correlated System SmB6and Implications for a Topological Kondo Insulator

Bulk Fermi Surface of Charge-Neutral Excitations in SmB_{6} or Not: A Heat-Transport Study.

Emergence of a coherent in-gap state in SmB6 Kondo insulator revealed by scanning tunneling spectroscopy

SmB6: A material with anomalous energy distribution function of charge carriers?

Emergence of a Coherent In-Gap State in the SmB6 Kondo Insulator Revealed by Scanning Tunneling Spectroscopy.

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB_{6}

Anomalous Quantum Oscillations and Evidence for a Non-Trivial Berry Phase in SmSb

Exploration of strongly correlated states in SmB6 through a comparison of its two-coil pick-up response to that of Bi2Se3

On the Chemistry and Physical Properties of Flux and Floating Zone Grown SmB6 Single Crystals

Magnetoresistance Evidence of A Surface State and A Field-Dependent Insulating State in the Kondo Insulator Smb6

Ground state anomalies in SmB6

Correlation Induced Magnetic Topological Phases in Mixed-Valence Compound SmB6

Anomalous quantum oscillations and a non-trivial Berry phase in SmSb

Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6

Magnetic and Defect Probes of the SmB6 Surface State

Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB6 nanowires