Abstract:SmB6, a well-known Kondo insulator, has been proposed to be an ideal topological insulator with states of topological character located in a clean, bulk electronic gap, namely, the Kondo-hybridization gap. Since the Kondo gap arises from many-body electronic correlations, SmB6 would be placed at the head of a new material class: topological Kondo insulators. Here, for the first time, we show that the k-space characteristics of the Kondo-hybridization process is the key to unraveling the origin of the two types of metallic states experimentally observed by angle-resolved photoelectron spectroscopy (ARPES) in the electronic band structure of SmB6(001). One group of these states is essentially of bulk origin and cuts the Fermi level due to the position of the chemical potential 20 meV above the lowest-lying 5d-4f hybridization zone. The other metallic state is more enigmatic, being weak in intensity, but represents a good candidate for a topological surface state. However, before this claim can be substantiated by an unequivocal measurement of its massless dispersion relation, our data raise the bar in terms of the ARPES resolution required, as we show there to be a strong renormalization of the hybridization gaps by a factor 2-3 compared to theory, following from the knowledge of the true position of the chemical potential and a careful comparison with the predictions from recent local-density-approximation (LDA) + Gutzwiller calculations. All in all, these key pieces of evidence act as triangulation markers, providing a detailed description of the electronic landscape in SmB6 and pointing the way for future, ultrahigh-resolution ARPES experiments to achieve a direct measurement of the Dirac cones in the first topological Kondo insulator.

Surface and Electronic Structure of Smb6 Through Scanning Tunneling Microscopy

Additional Energy Scale in SmB6 at Low-Temperature

Comparative Scanning Tunneling Microscopy Study on Hexaborides

Planar tunneling spectroscopy of the topological Kondo insulator SmB$_6$

Composition-spread Growth and the Robust Topological Surface State of Kondo insulator SmB6 Thin Films

Surface electronic structure of the topological Kondo insulator candidate correlated electron system SmB6

Heavy Surface State In A Possible Topological Kondo Insulator: Magnetothermoelectric Transport On The (011) Plane Of Smb6

Hybridization, Inter-Ion Correlation, and Surface States in the Kondo Insulator SmB6

Kondo Hybridization and the Origin of Metallic States at the (001) Surface of SmB_{6}

Magnetic and Defect Probes of the SmB6 Surface State

Observation of Possible Topological In-Gap Surface States in the Kondo Insulator Smb6 by Photoemission

Robust Surface Hall Effect and Nonlocal Transport in SmB6: Indication for an Ideal Topological Insulator

Surface- and Pressure-Induced Bulk Kondo Breakdown in SmB6

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

Surface reconstruction in a tight-binding model for the topological Kondo insulator SmB 6

Emergence of a coherent in-gap state in SmB6 Kondo insulator revealed by scanning tunneling spectroscopy

Topology of SmB6 revisited by means of topological quantum chemistry

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB_{6}

Ultrafast terahertz spectroscopy study of Kondo insulating thin film SmB$_{6}$: evidence for an emergent surface state

Exotic Kondo Crossover in a Wide Temperature Region in the Topological Kondo Insulatorsmb6revealed by High-Resolution ARPES