Abstract:Earlier studies on the Kondo insulator SmB6 reveal the presence of a bulk Kondo insulating gap between 30 - 50 K, and the emergence of a conducting surface state only below 4 K. Here, we compare the two-coil mutual inductance pick-up response of SmB6 single crystal with that of a conventional topological insulator (TI), Bi2Se3 single crystal. From these studies we identify three distinct temperature regimes for SmB6, viz., (i) T >= T*(~ 66 K), (ii) (40 K~) T_g <= T < T*, and (iii) T < T_g. At T* in SmB6, we observe a peak in the temperature-dependent AC pickup signal which corresponds to the peak in the broad hump feature in the bulk DC susceptibility measurements and features in the resistivity measurements. A dip in the pickup signal at T_g in SmB6 correlates with the evidence for the opening of a bulk Kondo gap in transport measurements. Our study of the pickup signal in SmB6 suggests the presence of a thin (submicron order thickness) high conducting surface layer from a temperature just below T_g. In this T regime in SmB6, the pickup signal shows a distinct square root frequency (f) dependence compared to the linear f dependence found in Bi2Se3. Across all the different T regimes, distinct AC frequency dependence and scaling properties are observed. Our results suggest that above T*, weak exchange interactions cause electrons to scatter from random ion sites. Electronic correlations gradually strengthen with the onset of Kondo like hybridization, setting in from below T*, and at T_g, a strongly correlated Kondo gap opens up in the bulk of the material. The appearance of the thin high conducting surface layer is nearly coincident with the onset of bulk Kondo insulating state below T_g in SmB6.

Hybridization, Inter-Ion Correlation, and Surface States in the Kondo Insulator SmB6

Additional Energy Scale in SmB6 at Low-Temperature

Surface and Electronic Structure of Smb6 Through Scanning Tunneling Microscopy

Composition-spread Growth and the Robust Topological Surface State of Kondo insulator SmB6 Thin Films

Observation of Possible Topological In-Gap Surface States in the Kondo Insulator Smb6 by Photoemission

Ultrafast terahertz spectroscopy study of Kondo insulating thin film SmB$_{6}$: evidence for an emergent surface state

Surface electronic structure of the topological Kondo insulator candidate correlated electron system SmB6

Kondo Hybridization and the Origin of Metallic States at the (001) Surface Ofsmb6

Emergence of a coherent in-gap state in SmB6 Kondo insulator revealed by scanning tunneling spectroscopy

Heavy Surface State In A Possible Topological Kondo Insulator: Magnetothermoelectric Transport On The (011) Plane Of Smb6

Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB<sub>6</sub>

Emergence of a Coherent In-Gap State in the SmB6 Kondo Insulator Revealed by Scanning Tunneling Spectroscopy.

Magnetoresistance Evidence of A Surface State and A Field-Dependent Insulating State in the Kondo Insulator Smb6

Exotic Kondo Crossover in a Wide Temperature Region in the Topological Kondo Insulatorsmb6revealed by High-Resolution ARPES

Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6

From bad metal to Kondo insulator: temperature evolution of the optical properties of SmB$_{6}$

Exploration of strongly correlated states in SmB6 through a comparison of its two-coil pick-up response to that of Bi2Se3

Planar tunneling spectroscopy of the topological Kondo insulator SmB$_6$

Surface- and Pressure-Induced Bulk Kondo Breakdown in SmB6

Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB6 nanowires

Excitons in topological Kondo insulators - theory of thermodynamic and transport anomalies in SmB$_6$