Magnetoresistance Evidence of A Surface State and A Field-Dependent Insulating State in the Kondo Insulator Smb6

F. Chen,C. Shang,Z. Jin,D. Zhao,Y. P. Wu,Z. J. Xiang,Z. C. Xia,A. F. Wang,X. G. Luo,T. Wu,X. H. Chen
DOI: https://doi.org/10.1103/physrevb.91.205133
2015-01-01
Abstract:Recently the resistance saturation at low temperature in the Kondo insulator SmB6, a long-standing puzzle in condensed matter physics, was proposed to originate from a topological surface state. Here we systematically studied the magnetoresistance of SmB6 at low temperature up to 55 T. For temperature decreasing below 16 K, the temperature-dependent magnetoresistance exhibits a negative magnetoresistance, while the angular-dependent magnetoresistance shows a fourfold symmetry. Below 5 K, both temperature-and angular-dependent magnetoresistances show a similar crossover behavior in which the negative magnetoresistance is strongly suppressed and a twofold angular-dependent magnetoresistance appears. Furthermore, the angular-dependent magnetoresistance on a different crystal face confirms a two-dimensional surface state as the origin of magnetoresistance crossover below 5 K. Based on a two-channels model consisting of both surface and bulk states, the critical magnetic field (H-c) of 125 T for field-dependent insulating behavior is extracted from our temperature-dependent resistance under different magnetic fields. Our results have important implications in understanding the novel low-temperature transport behavior in SmB6.
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