Abstract:The recent conjecture of a topologically-protected surface state in SmB$_6$ and the verification of robust surface conduction below 4 K have prompted a large effort to understand the surface states. Conventional Hall transport measurements allow current to flow on all surfaces of a topological insulator, so such measurements are influenced by contributions from multiple surfaces of varying transport character. Instead, we study magnetotransport of SmB$_6$ using a Corbino geometry, which can directly measure the conductivity of a single, independent surface. Both (011) and (001) crystal surfaces show a strong negative magnetoresistance at all magnetic field angles measured. The (011) surface has a carrier mobility of $122\text{ cm}^2/\text{V}\cdot\text{sec}$ with a carrier density of $2.5\times10^{13} \text{ cm}^{-2}$, which are significantly smaller than indicated by Hall transport studies. This mobility value can explain a failure so far to observe Shubnikov-de Haas oscillations. Analysis of the angle-dependence of conductivity on the (011) surface suggests a combination of a field-dependent enhancement of the carrier density and a suppression of Kondo scattering from native oxide layer magnetic moments as the likely origin of the negative magnetoresistance. Our results also reveal a hysteretic behavior whose magnitude depends on the magnetic field sweep rate and temperature. Although this feature becomes smaller when the field sweep is slower, does not disappear or saturate during our slowest sweep-rate measurements, which is much slower than a typical magnetotransport trace. These observations cannot be explained by quantum interference corrections such as weak anti-localization, but are more likely due to an extrinsic magnetic effect such as the magnetocaloric effect or glassy ordering.

Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6

Magnetoresistance Evidence of A Surface State and A Field-Dependent Insulating State in the Kondo Insulator Smb6

Additional Energy Scale in SmB6 at Low-Temperature

Surface and Electronic Structure of Smb6 Through Scanning Tunneling Microscopy

Heavy Surface State In A Possible Topological Kondo Insulator: Magnetothermoelectric Transport On The (011) Plane Of Smb6

Magnetoresistance Anomaly in Topological Kondo Insulator SmB6 Nanowires with Strong Surface Magnetism

Observation of Possible Topological In-Gap Surface States in the Kondo Insulator Smb6 by Photoemission

Hybridization, Inter-Ion Correlation, and Surface States in the Kondo Insulator SmB6

Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB6 nanowires

Spin-Polarized Surface State Transport In A Topological Kondo Insulator Smb6 Nanowire

Magnetoresistance Hysteresis in Topological Kondo Insulator SmB6 Nanowire

Surface electronic structure of the topological Kondo insulator candidate correlated electron system SmB6

Magnetotransport Measurements of the Surface States of Samarium Hexaboride using Corbino Structures

Exotic Kondo Crossover in a Wide Temperature Region in the Topological Kondo Insulatorsmb6revealed by High-Resolution ARPES

Surface- and Pressure-Induced Bulk Kondo Breakdown in SmB6

Composition-spread Growth and the Robust Topological Surface State of Kondo insulator SmB6 Thin Films

Surface and Bulk Electronic Structure of the Strongly Correlated System SmB6and Implications for a Topological Kondo Insulator

Ultrafast terahertz spectroscopy study of Kondo insulating thin film SmB$_{6}$: evidence for an emergent surface state

Emergence of a coherent in-gap state in SmB6 Kondo insulator revealed by scanning tunneling spectroscopy

Bulk Fermi Surface of Charge-Neutral Excitations in SmB_{6} or Not: A Heat-Transport Study.

Emergence of a Coherent In-Gap State in the SmB6 Kondo Insulator Revealed by Scanning Tunneling Spectroscopy.