Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides

Zhongzheng Wu,Fan Wu,Peng Li,Chunyu Guo,Yi Liu,Zhe Sun,Cheng-Maw Cheng,Tai-Chang Chiang,Chao Cao,Huiqiu Yuan,Yang Liu

DOI: https://doi.org/10.1103/PhysRevB.99.035158

2019-02-09

Abstract:Combining angle-resolved photoemission spectroscopy and magneto-transport measurements, we systematically investigated the possible origin of the extreme magnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi, SmBi). Our photoemission measurements reveal that the bulk band inversion and surface states are absent (present) in Pr/Sm antimonides (bismuthides), implying that topological surface states are unlikely to play an important role for the observed extreme magnetoresistance. We found that the electron-hole compensation is well satisfied in all these compounds and the bulk band structure exhibits no obvious temperature dependence from 10 K up to 150 K. Simultaneous fittings of the magnetoresistance and Hall coefficient reveal that the carrier mobility is dramatically enhanced at low temperature, which naturally explains the suppression of extreme magnetoresistance at high temperatures. Our results therefore show that the extreme magnetoresistance in these compounds can be well accounted for by the two-band model with good electron-hole compensation. Finally, we found that both PrSb and SmSb exhibit highly linear bulk bands near the X point and lie close to the transition point between a topologically trivial and nontrivial phase, which might be relevant for the observed anomalous quantum oscillations.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **To explore the origin of extreme magnetoresistance (XMR) in Pr/Sm mono - antimonides and mono - bismuthides (PrSb, SmSb, PrBi, SmBi)**. Specifically, the author hopes to systematically study the causes of the XMR phenomenon in these materials by combining angle - resolved photoemission spectroscopy (ARPES) and magnetic transport measurements.

### Key issues:
1. **Does the topological surface state (TSS) contribute to XMR?**
- The study found that in Pr/Sm mono - antimonides, no obvious bulk band inversion and surface states were observed, while these phenomena exist in Pr/Sm mono - bismuthides. This indicates that the topological surface state is unlikely to be the main cause of XMR.

2. **Does the electron - hole compensation mechanism explain XMR?**
- By simultaneously fitting the magnetoresistance (MR) and Hall coefficient, the researchers found that all four compounds exhibit good electron - hole compensation, and the carrier mobility is significantly enhanced at low temperatures. This provides a reasonable explanation for XMR.

3. **Why does XMR only appear at low temperatures?**
- Research shows that as the temperature rises, the carrier mobility decreases significantly, which is the main reason for the disappearance of XMR at high temperatures. Although the electron - hole balance changes slightly in certain temperature ranges, this is not the main factor.

### Main conclusions:
- The main reasons for XMR are **good electron - hole compensation** and **high carrier mobility at low temperatures**.
- The topological surface state does not play a major role in the XMR phenomenon in these materials.
- PrSb and SmSb exhibit a highly linear bulk band structure near the X - point, close to the critical point of the topological phase transition, which may be one of the reasons for their special quantum oscillations.

Through these studies, the author provides important experimental and theoretical bases for understanding the physical mechanism of XMR.