Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

Junfeng He,Chaofan Zhang,Nirmal J. Ghimire,Tian Liang,Chunjing Jia,Juan Jiang,Shujie Tang,Sudi Chen,Yu He,S. -K. Mo,C. C. Hwang,M. Hashimoto,D. H. Lu,B. Moritz,T. P. Devereaux,Y. L. Chen,J. F. Mitchell,Z. -X. Shen
DOI: https://doi.org/10.1103/physrevlett.117.267201
IF: 8.6
2016-01-01
Physical Review Letters
Abstract:An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.
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