Abstract:Hypereutectic Al-Si alloys, which have a silicon content ranging from 12% to 70%, are a new generation of casing materials for chip packaging. They have broad applications in aerospace, weaponry, and civilian communications. Selective Laser Melting (SLM) offers significant advantages in achieving near-net shaping of complex casings. This paper presents a study on the formation defects, microstructure, and room temperature tensile properties of AlSi60 alloy prepared by SLM. The results indicate that the primary forming defects in the SLM AlSi60 alloy are balling, lack of fusion, and porosity. These defects are mainly influenced by the volumetric energy density. Samples of good quality can be produced within the range of 150 J/mm3 to 250 J/mm3. However, the same volumetric energy density can result in differences in sample quality due to various combinations of process parameters. Therefore, it has been determined that a well-formed AlSi60 alloy can be obtained within a laser power range of 300 W–350 W, scanning speed of 400 mm/s–800 mm/s, and hatch spacing of 0.09 mm–0.13 mm, with a density close to 98%. The microstructure of the SLM AlSi60 alloy consists of primary Si phases with irregular shapes and sharp edges measuring 5–10 μm, eutectic Si particles of 0.5 μm, and α-Al phases, with eutectic Si dispersed within the α-Al. The SLM AlSi60 alloy exhibits fine and evenly distributed primary Si phases with an average hardness of 203 HV. No significant anisotropy in hardness values was observed in the X and Y directions. The tensile strength of the alloy reached an average of 219 MPa, with an average elongation of 2.99%. During the tensile process, cracks initiated by the primary Si phases rapidly expanded, exhibiting minor ductile fracture characteristics in the Al phases. Due to the high volume fraction of Si phases, the tensile test was dominated by brittle fracture. The tensile curve only exhibited the elastic stage.

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