Abstract:Nanocrystalline diamond (NCD) films are attractive for many applications due to their smooth surfaces while holding the properties of diamond. However, their growth rate is generally low using common Ar/CH4 with or without H2 chemistry and strongly dependent on the overall growth conditions using microwave plasma chemical vapor deposition (MPCVD). In this work, incorporating a small amount of N2 and O2 additives into CH4/H2 chemistry offered a much higher growth rate of NCD films, which is promising for some applications. Several novel series of experiments were designed and conducted to tailor the growth features of NCD films by fine-tuning of the gas-phase compositions with different amounts of nitrogen and oxygen addition into CH4/H2 gas mixtures. The influence of growth parameters, such as the absolute amount and their relative ratios of O2 and N2 additives; substrate temperature, which was adjusted by two ways and inferred by simulation; and microwave power on NCD formation, was investigated. Short and long deposition runs were carried out to study surface structural evolution with time under identical growth conditions. The morphology, crystalline and optical quality, orientation, and texture of the NCD samples were characterized and analyzed. A variety of NCD films of high average growth rates ranging from 2.1 μm/h up to 6.7 μm/h were successfully achieved by slightly adjusting the O2/CH4 amounts from 6.25% to 18.75%, while that of N2 was kept constant. The results clearly show that the beneficial use of fine-tuning of gas-phase compositions offers a simple and effective way to tailor the growth characteristics and physical properties of NCD films for optimizing the growth conditions to envisage some specific applications.

The influence of nitrogen and oxygen on the high nucleation density diamond growth

Effect of Nitrogen on Growth and Optical Properties of Single-Crystal Diamond Synthesized by Chemical Vapor Deposition

High nitrogen amounts incorporated diamond films deposited by the addition of nitrogen in a hot-filament CVD system

Influence of CVD diamond growth conditions on nitrogen incorporation

Effects of Oxygen/nitrogen Co-Incorporation on Regulation of Growth and Properties of Boron-Doped Diamond Films

Effects of Nitrogen on Formation and Properties of Diamondlike Films Synthesized by Dual Ion Beam Deposition

Effect of nitrogen–hydrogen co-doping on diamond growth

Nitrogen Adsorption Induced Surface Kinetics Changes of Diamond Growth by Microwave Plasma Cvd

A Theoretical Study on Dopants Substituted on the H-terminated Surface Regulating the Threshold Concentration of Nitrogen for Accelerating Diamond Growth

Nitrogen overgrowth as a catalytic mechanism during diamond chemical vapour deposition

The effect of Ni content in metal solvent on diamond growth and N-related defects

Analysis of the mechanism of the effect of N–H–O impurities on diamond growth under HPHT

Synthesis and nitrogen content regulation of diamond in high pressure hydrogen rich environment

Effect of Nitrogen on Deposition and Field Emission Properties of Boron-Doped Micro- and Nano-Crystalline Diamond Films

Growth rate and EBSD texture analysis of nitrogen doped diamond films

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Fast, Efficient Tailoring Growth of Nanocrystalline Diamond Films by Fine-Tuning of Gas-Phase Composition Using Microwave Plasma Chemical Vapor Deposition

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Effect of Oxygen on Regulation of Properties of Moderately Boron-Doped Diamond Films

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process