Abstract:We present measurements of the self- and mutual inductance of NbN and bilayer NbN/Nb inductors with Nb ground plane(s) fabricated in an advanced process for superconductor electronics developed at MIT Lincoln Laboratory. In this process, the signal traces of logic cell inductors are made either of a 200-nm NbN layer with $T_c$=15 K or of an in-situ deposited NbN/Nb bilayer, replacing a 200-nm Nb layer M6 in the standard SFQ5ee process with nine superconducting layers. Nb ground planes were preserved to maintain a high level of interlayer shielding and low intralayer mutual coupling. A two-step patterning of the top Nb and the bottom NbN layers of the NbN/Nb bilayer allows to create inductors in a very wide range of linear inductance values, from low values ~ 0.4 pH/$\mu$m typical for Nb geometrical inductors to ~ 35 pH/$\mu$m typical to thin-film kinetic inductors. Mutual inductance of NbN and Nb inductors, of NbN inductors, and of bilayer inductors is the same as between two Nb inductors with the same geometry and placement between the ground planes, i.e., mutual inductance does not depend on superconducting properties of the signal traces in the studied range of linewidths. We measured magnetic field penetration depth and kinetic inductance of NbN films with thickness t=200 nm to be $\lambda$ = 491+/-5 nm and 1.51 pH/sq, and 2.06 pH/sq at t=150 nm. The kinetic inductance was found to be larger than that expected for superconductors with short mean free path, indicating a reduction in the superfluid density, likely due to carrier localization effects. Kinetic inductance associated with right-angled bends of the NbN inductors is negligible at linewidths $w<{\lambda}^2/t$, indicating a very small current crowding in structures with superconducting ground plane(s). Implementation of NbN and NbN/Nb inductors can significantly increase integration scale of superconductor digital electronics.

Inductance and mutual inductance of superconductor integrated circuit features with sizes down to 120 nm. Part I

Mutual and self-inductance in planarized multilayered superconductor integrated circuits: Microstrips, striplines, bends, meanders, ground plane perforations

Inductance of Circuit Structures for MIT LL Superconductor Electronics Fabrication Process With 8 Niobium Layers

Self- and Mutual Inductance of NbN and Bilayer NbN/Nb Inductors in Planarized Fabrication Process With Nb Ground Planes

Vertical Topologies of Miniature Multispiral Stacked Inductors

On the Efficacy of Through-Silicon-Via Inductors

Experimental Characterisation Of On-Chip Octagonal Double-Helix Inductors On Silicon Substrates

Experimental Characterization of Coupling Effects Between Two On-Chip Neighboring Square Inductors

A Compact Circuit Model of On-Chip Multi-layer Spiral Inductors on Silicon Substrate

Comparative Characteristics of On-Chip Single- and Double-Level Square Inductors

Modelling On-Chip Circular Double-Spiral Stacked Inductors for RFICs

Advanced Fabrication Processes for Superconducting Very Large Scale Integrated Circuits

Double-level Spiral Inductors with Multiple-Via Interconnects on GaAs Substrates

Three-dimensional multi-terminal superconductive integrated circuit inductance extraction

The design and fabrication of LTCC chip inductors for high frequency applications based on barium ferrites

Inductance extraction of superconductor structures with internal current sources

Inductance and penetration depth measurements of polycrystalline NbN Films for all-NbN single flux quantum circuits

Progress toward superconductor electronics fabrication process with planarized NbN and NbN/Nb layers

Coupling Effects Between On-Chip Inductors in the Millimeter-Wave Regime

Implementation of scalable suspended superinductors

Design and testing of high-speed interconnects for Superconducting multi-chip modules