High efficiency regulation method to generate an illumination source by adopting the micromirror array in DUV lithography

Yuqing Chen,Yanqiu Li,Lihui Liu

DOI: https://doi.org/10.1364/ao.536947

IF: 1.9

2024-10-02

Applied Optics

Abstract:Yuqing Chen, Yanqiu Li, Lihui Liu Source and mask optimization (SMO) is an important lithography resolution enhancement technique for 22 nm technology nodes and ... [Appl. Opt. 63, 7608-7614 (2024)]

optics

What problem does this paper attempt to address?

Compact Ultraviolet Light-Emitting Diode-Based Lithography Illumination System with Tunable Coherent Factor

Jianghui Liu,Song Hu,Qiang Li

DOI: https://doi.org/10.1117/1.oe.62.4.045103

IF: 1.3

2023-01-01

Optical Engineering

Abstract:Abstract. Optimization of the illumination system of an ultraviolet light-emitting diode (UVLED)-based lithography system by reducing the system complexity and spatial volume has been a research focus. This work proposes a compact lithography illumination system that applies a specially designed embedded compound parabolic concentrator (ECPC) to replace the traditional collimation module and the zoom lenses module. The ECPC, comprised of two detachable parabolic surfaces, precisely collimates all light beams from the UVLED to a preset divergence angle of 6 deg and provides an adjustable lithography coherent factor. The final illumination system offers a square illumination field with a uniformity of up to 1.3% in the large coherent factor and a linearly adjustable numerical aperture in the range of 0.02 ∼ 0.04. The final exposure result of 0.7 μm based on the experiment setup further verifies the performance of the designed illumination system.
Light and Matter Co-Confined Multi-Photon Lithography

Lingling Guan,Chun Cao,Xi Liu,Qiulan Liu,Yiwei Qiu,Xiaobing Wang,Zhenyao Yang,Huiying Lai,Qiuyuan Sun,Chenliang Ding,Dazhao Zhu,Cuifang Kuang,Xu Liu

DOI: https://doi.org/10.1038/s41467-024-46743-5

IF: 16.6

2024-01-01

Nature Communications

Abstract:Mask-free multi-photon lithography enables the fabrication of arbitrary nanostructures low cost and more accessible than conventional lithography. A major challenge for multi-photon lithography is to achieve ultra-high precision and desirable lateral resolution due to the inevitable optical diffraction barrier and proximity effect. Here, we show a strategy, light and matter co-confined multi-photon lithography, to overcome the issues via combining photo-inhibition and chemical quenchers. We deeply explore the quenching mechanism and photoinhibition mechanism for light and matter co-confined multiphoton lithography. Besides, mathematical modeling helps us better understand that the synergy of quencher and photo-inhibition can gain a narrowest distribution of free radicals. By using light and matter co-confined multiphoton lithography, we gain a 30 nm critical dimension and 100 nm lateral resolution, which further decrease the gap with conventional lithography.
Single-color Peripheral Photoinhibition Lithography of Nanophotonic Structures

Minfei He,Zhimin Zhang,Chun Cao,Yiwei Qiu,Xiaoming Shen,Guozun Zhou,Zixin Cai,Xinjie Sun,Xin He,Liang Xu,Xi Liu,Chenliang Ding,Yaoyu Cao,Cuifang Kuang,Xu Liu

DOI: https://doi.org/10.1186/s43074-022-00072-2

IF: 16.5

2022-01-01

PhotoniX

Abstract:Advances in direct laser writing to attain super-resolution are required to improve fabrication performance and develop potential applications for nanophotonics. In this study, a novel technique using single-color peripheral photoinhibition lithography was developed to improve the resolution of direct laser writing while preventing the chromatic aberration characteristics of conventional multicolor photoinhibition lithography, thus offering a robust tool for fabricating 2D and 3D nanophotonic structures. A minimal feature size of 36 nm and a resolution of 140 nm were achieved with a writing speed that was at least 10 times faster than existing photoinhibition lithography. Super-resolution and fast scanning enable the fabrication of spin-decoupled metasurfaces in the visible range within a printing duration of a few minutes. Finally, a subwavelength photonic crystal with a near-ultraviolet structural color was fabricated to demonstrate the potential of 3D printing. This technique is a flexible and reliable tool for fabricating ultracompact optical devices.
Maskless photolithography based on ultraviolet micro-LEDs and direct writing method for improving pattern resolution

Cuili Tan,Tianyang Ren,Daopeng Qu,Xinyi Shan,Runze Lin,Zhihao Zhang,Fusheng Li,Qiuyi Han,Xugao Cui,Ruiqian Guo,Shanduan Zhang,Pengfei Tian

DOI: https://doi.org/10.1364/oe.520809

IF: 3.8

2024-05-09

Optics Express

Abstract:Cuili Tan, Tianyang Ren, Daopeng Qu, Xinyi Shan, Runze Lin, Zhihao Zhang, Fusheng Li, Qiuyi Han, Xugao Cui, Ruiqian Guo, Shanduan Zhang, Pengfei Tian Ultraviolet micro-LEDs show great potential as a light source for maskless photolithography. However, there are few reports on micro-LED ... [Opt. Express 32, 18916-18930 (2024)]

optics
Design And Simulation Of Double Annular Illumination Mode For Micro-Lithography

Qiang Song,Jing Zhu,Baoxi Yang,Lei Liu,Jun Wang,Huijie Huang

DOI: https://doi.org/10.1117/12.2031650

2013-01-01

Abstract:Methods of generating various illumination patterns remain as an attractive and important micro-optics research area for the development of resolution enhancement in advanced lithography system. In the current illumination system of lithography machine, off-axis illumination is widely used as an effective approach to enhance the resolution and increase the depth of focus (DOF). This paper proposes a novel illumination mode generation unit, which transform conventional mode to double annular shaped radial polarized (DARP) mode for improving the resolution of micro-lithography. Through LightTools (TM) software simulation, double annular shaped mode is obtained from the proposed generation unit. The mathematical expressions of the radius variation of inner and outer rings are deduced. The impacts of conventional and dual concentric annular illumination pattern on critical dimension uniformity were simulated on an isolated line, square hole and corner. Lithography performance was compared between DARP illumination mode and corresponding single annular modes under critical dimension of 45nm. As a result, DARP illumination mode can improve the uniformity of aerial image at 45nm node through pitch varied in 300-500 nm to a certain extent.
Can we improve the energy efficiency of EUV lithography?

Tsumoru Shintake

2024-05-20

Abstract:This paper discusses a simple, low-cost, highly efficient two-mirror projector with a simplified illumination system. The EUV source power can be reduced by 1/10 compared to the current six-mirror EUV projector system. The required EUV power is 20 watts for process speed of 100 wafers per hour. The proposed in-line projector achieves 0.2 NA (20 mm field) and 0.3 NA (10 mm field), which can be assembled in a cylindrical tube configuration similar to a DUV projector, providing superior mechanical stability and easier assembly/maintenance. The EUV light is introduced in front of the mask through two narrow cylindrical mirrors located on both side of the diffraction cone, providing average normal illumination and reducing the mask 3D effect. The simplified illumination system provides symmetric quadrupole off-axis illumination, bypassing central obscuration and improving spatial resolution, also realizing Köhler illumination. The theoretical resolution limit is 24 nm (20 mm field), image reduction factor x5 and object image distance (OID) 2000 mm. With the curved surface mask, the tool height can be reduced to (OID) 1500 mm, which provides resolution 16 nm (10 mm field). It will be suitable for small die size chip production for mobile applications as well as the latest chiplet technology.

Optics,Applied Physics
Optimization design of irradiance array for LED uniform rectangular illumination.

Rengmao Wu,Zhenrong Zheng,Haifeng Li,Xu Liu

DOI: https://doi.org/10.1364/AO.51.002257

IF: 1.9

2012-01-01

Applied Optics

Abstract:Light-emitting diode (LED) large-scale uniform rectangular illumination has a wide range of applications and is usually created by an irradiance superposition scheme. Abandoning the traditional method, we propose an approach to generate this illumination mode and enhance efficiency. With this method, an independent rectangular irradiance distribution is generated by each LED lens unit, and the large-scale illumination is obtained by arraying the irradiance distribution. Two slim direct-lit LED backlightings with a distance-height ratio of 3 were designed. An optical performance with irradiance nonuniformity less than 0.0228 and efficiency greater than 96% were obtained. Compared with the traditional methods, the efficiency is significantly enhanced and the number of the LED units is dramatically reduced by this new method. (c) 2012 Optical Society of America
Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1149/1.3360669

2010-01-01

Abstract:With the technology node entering 45nm and below and the delay of the EUV lithography, the resolution enhancement techniques (RET) has been considered indispensable to extend the life time of conventional 193nm lithography. Traditional RETs, for example, optical proximity correction (OPC), phase-shifting mask (PSM), inverse lithography technique (ILT) and so on, use a fixed source thus limiting the degrees of freedom during the mask pattern optimization. To overcome the restriction, recently, source and mask co-optimization (SMO) has been proposed as a strong contender in RET. However, SMO is very computationally intensive. To mitigate the issue, we adopt a method which has demonstrated in good effectivity and efficiency in illumination source optimization. Based on the gray-level pixel based source representation, the gradient of the cost function is calculated to guide optimization to improve the wafer image fidelity and depth of focus (DOF). Moreover, the similar method has been used in mask optimization to form a complete SMO algorithm. The SMO algorithm is demonstrated using two mask patterns with critical dimension (CD) of 45nm, including a periodic array of contact holes and a tri-bar pattern. Both the results showed high image quality have been achieved using our SMO algorithm.
High Performance Source Optimization Using A Gradient-Based Method in Optical Lithography

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1109/isqed.2010.5450390

2010-01-01

Abstract:Recently, source and mask optimization (SMO) has been proposed as an effective solution to help extending the life time of conventional 193nm lithography. However, SMO is very computationally intensive. To mitigate this issue, we propose a highly effective and efficient method for source optimization in this paper. Based on the gray-level pixel based source representation, the gradient of the cost function is calculated to guide optimization to improve the wafer image fidelity and depth of focus (DOF). This method is demonstrated using two mask patterns with critical dimension of 45nm, including a periodic array of contact holes and an asymmetric mask pattern from an SRAM layout. Comparing with two recently proposed methods, our method can provide greater improvements in image quality and over 10X running speed enhancement. The robustness of our method is verified using several different initial source patterns. Results show that similar final optimized source patterns and image quality have been achieved.
High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography

Feng Feng,Yibo Liu,Ke Zhang,Hang Yang,Byung-Ryool Hyun,Ke Xu,Hoi-Sing Kwok,Zhaojun Liu

DOI: https://doi.org/10.1038/s41566-024-01551-7

IF: 35

2024-10-16

Nature Photonics

Abstract:Developing aluminium gallium nitride deep-ultraviolet (UVC) micro-light-emitting diodes (micro-LEDs) with sufficient power has been a challenge, which particularly limits these devices to various applications. However, advanced fabrication processes have been developed to enable the demonstration of highly efficient 270 nm UVC micro-LEDs and large-format UVC micro-LED displays with high resolution for maskless photolithography. Optical and electrical characterizations were performed on UVC micro-LEDs with sizes ranging from 3 μm to 100 μm to evaluate these emerging devices. The 3 μm device achieved a record-high peak external quantum efficiency of 5.7% and a maximum brightness of 396 W cm –2 . Moreover, 2,540 pixels per inch parallel-connected UVC micro-LED arrays featuring rear-side reflection layers exhibited emission uniformity and collimation. UVC micro-LED displays, with a resolution of 320 × 140, were explicitly designed for maskless photolithography applications utilizing a customized integrated circuit driver for optimal performance. The UVC micro-LEDs and UVC micro-displays provide sufficient doses to fully expose the photoresist film within seconds, owing to their enhanced current spreading uniformity, improved heat dispersion and superior light extraction efficiency. This work may open a path to maskless photolithography, potentially leading to revolutionary developments in the semiconductor industry.

optics,physics, applied
Angle monitor of micromirror array for freeform illumination in lithography systems

Jingwei Zhang,Jingpei Hu,Zenghui Yang,Aijun Zeng,Huijie Huang

DOI: https://doi.org/10.1063/5.0186334

IF: 1.697

2024-01-01

AIP Advances

Abstract:Source and mask optimization is a critical technique for further resolution enhancement in immersion lithography systems, wherein the optimal illumination source shape is widely generated by the micromirror array. Accordingly, the accurate achievement of the allocated angles of micromirrors is a key prerequisite for the implementation of arbitrary illumination patterns. In this paper, we propose an angle monitor to ensure the high-precision tilting of thousands of biaxial micromirrors. As one of the critical modules for closed-loop control of the two-dimensional micromirror array, the online monitor feeds the monitored high-precision tilt angle back to the processing system. The angle monitor mainly consists of the spot scanning module and the angle detection module. Among them, an f-θ lens and a Fourier transform lens with satisfied performances are designed and evaluated by CODE V. Furthermore, a galvanometer and the designed f-θ lens are adopted for the generation of the spot array irradiated on the electrostatic actuated mirrors. Meanwhile, the designed Fourier transform lenses are employed to detect the corresponding tilt angles. In addition, the performance of the proposed system is identified by simulations and experiments individually. It is demonstrated that the monitorable biaxial tilt range of the system is (−2.5°, +2.5°) with a repeatability of better than 0.005°. The large-format micromirror array can be monitored completely without optical cross-talk. Through the device, a 16 × 16 micromirror array is monitored, where the initial angle with no bias voltage applied is captured and the voltage–angle relation for individual micromirrors is obtained. In general, the proposed system can be utilized in the illumination system, providing an efficient and reliable method for complex source shape generation.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Gradient-Based Source And Mask Optimization In Optical Lithography

Yao Peng,Jinyu Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1109/TIP.2011.2131668

IF: 10.6

2011-01-01

IEEE Transactions on Image Processing

Abstract:Source and mask optimization (SMO) has been proposed recently as an effective solution to extend the lifespan of conventional 193 nm lithography, although the process is computationally intensive. In this study, we propose a highly effective and efficient method for source optimization and improve a previous method for mask optimization. An SMO framework is implemented by integrating them. Based on pixel-based source and mask representation, the gradients of the objective function are utilized to guide optimization. In addition to maintain the image fidelity, extra penalties are added into the objective function to increase the depth of focus (DOF) and regularize the source and mask patterns. In our SMO framework, a specially designed mask optimization procedure is performed to enhance the algorithm robustness. Afterward, the source optimization and mask optimization are performed alternatively. Convergence results can be acquired using only two or three iteration cycles. This method is demonstrated using two mask patterns with critical dimensions of 45 nm, including a periodic array of contact holes and a cross gate design. The results show that our method can provide great improvements in both image quality and DOF. The robustness of our method is also verified using different initial conditions.
DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

Wei Xiong,Min-Chun Tsai,Jinyu Zhang,Zhiping Yu

2007-01-01

Abstract:Resolution Enhancement Technologies (RETs) are widely used to cope with the severe optical effects that are manifests in sub-wavelength lithography. Inverse Litho- graphy Technique (ILT) has recently been proposed as an effective RET for sub-wavelength technology. ILT incre- ases the degree-of-freedom in mask data manipulation, and allows automatic correction to 2D pattern distortion. In this work, a realistic aerial image model with an efficient opti- mization scheme is developed to pattern metal layers for the 65nm technology node. Simulation results show that the optimized masks provide good fidelity in patterning. We called our method DIscrete REtiCle Technique, DIRECT.
Parallel two-photon lithography achieving uniform sub-200 nm features with thousands of individually controlled foci

Shunhua Yang,Chenyi Su,Songyun Gu,Qiuyuan Sun,Qi Sun,Liang Xu,Zhenyao Yang,Tianhao Jia,Chenliang Ding,Shih-Chi Chen,Cuifang Kuang,Xu Liu

DOI: https://doi.org/10.1364/OE.483524

2023-04-24

Abstract:The limited throughput of nano-scale laser lithography has been the bottleneck for its industrial applications. Although using multiple laser foci to parallelize the lithography process is an effective and straightforward strategy to improve rate, most conventional multi-focus methods are plagued by non-uniform laser intensity distribution due to the lack of individual control for each focus, which greatly hinders the nano-scale precision. In this paper, we present a highly uniform parallel two-photon lithography method based on a digital mirror device (DMD) and microlens array (MLA), which allows the generation of thousands of femtosecond (fs) laser foci with individual on-off switching and intensity-tuning capability. In the experiments, we generated a 1,600-laser focus array for parallel fabrication. Notably, the intensity uniformity of the focus array reached 97.7%, where the intensity-tuning precision for each focus reached 0.83%. A uniform dot array structure was fabricated to demonstrate parallel fabrication of sub-diffraction limit features, i.e., below 1/4 λ or 200 nm. The multi-focus lithography method has the potential of realizing rapid fabrication of sub-diffraction, arbitrarily complex, and large-scale 3D structures with three orders of magnitude higher fabrication rate.
Linearized EUV mask optimization based on the adjoint method

Pinxuan He,Jiamin Liu,Honggang Gu,Hao Jiang,Shiyuan Liu

DOI: https://doi.org/10.1364/oe.517783

IF: 3.8

2024-02-24

Optics Express

Abstract:Pinxuan He, Jiamin Liu, Honggang Gu, Hao Jiang, Shiyuan Liu Mask optimization, a compensation method for the thick mask effect and the optical proximity effect in projection lithography, is essential ... [Opt. Express 32, 8415-8424 (2024)]

optics
Mask structure optimization for beyond EUV lithography

Ziqi Li,Lisong Dong,Xu Ma,Yayi Wei

DOI: https://doi.org/10.1364/ol.523596

IF: 3.6

2024-06-19

Optics Letters

Abstract:Ziqi Li, Lisong Dong, Ma Xu, Yayi Wei Beyond extreme ultraviolet (BEUV) lithography with a 6?×?nm wavelength is regarded as a future technique to continue the pattern ... [Opt. Lett. 49, 3604-3607 (2024)]

optics
Development of a Lithography Simulation Tool Set in Various Optical Conditions for Source Mask Optimization

Masaki Kuramochi,Yukihide Kohira,Hiroyoshi Tanabe,Tetsuaki Matsunawa,Chikaaki Kodama

DOI: https://doi.org/10.1109/access.2024.3390936

IF: 3.9

2024-04-30

IEEE Access

Abstract:Resolution Enhancement Techniques (RETs) in optical lithography have become essential for achieving the continuous shrinkage of technology nodes. The primary techniques in RETs include source mask optimization. Generally, lithography simulation, which estimates the image formed on wafers, is utilized in RETs. To optimize the light source and mask, optical conditions such as the light-source shape, numerical aperture, and exposure wavelength need to be adjusted in the lithography simulation. However, there is a shortage of open lithography simulation tools that cover various optical conditions. In academia, the study of source optimization in optical lithography is challenging. In this paper, we present the development of a lithography simulation tool set for source mask optimization. In our lithography simulation tool set, users can set optical conditions such as the light-source shape, mask shape, numerical aperture, and exposure wavelength. One function in our lithography simulation tool set calculates light intensity using the Transmission Cross Coefficient (TCC) model, while another function calculates it using the Sum of Coherent System (SOCS) for the specified optical conditions. In experiments, we verified the accuracy of our lithography simulation tool set and evaluated its execution time.

computer science, information systems,telecommunications,engineering, electrical & electronic
Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures

Yifan Zhu,Huimin Lu,Jianping Wang,Liya Feng,Jianhua Ma,Tongjun Yu,Junze Li

DOI: https://doi.org/10.1088/1361-6641/ad4dd9

IF: 2.048

2024-05-22

Semiconductor Science and Technology

Abstract:The surface of the deep ultraviolet (DUV) photodiodes requires an enhanced light absorption to improve wall-plug efficiency. The resonant Mie scatterer has a high optical mode density with a high refractive index all-dielectric resonant structure, which causes strong light coupling and improves forward scattering, providing a new perspective for efficient light absorption on the surface of the DUV photodiodes. In this work, a method is proposed for the design of nano-optical structures that is capable of supporting forward light scattering across the resonant bandwidth. This is achieved by utilizing intelligent algorithms in conjunction with Maxwell's equations. The results show that the average light absorption coefficient of the optimized optical structure is improved to more than 96% with angle-independent and polarization-independent characteristics. Based on intelligent algorithms, a reverse design approach can be employed to maximize this effect, thereby offering novel avenues for enhancing the wall-plug efficiency of the DUV photodiodes.

materials science, multidisciplinary,engineering, electrical & electronic,physics, condensed matter
Enhanced corner sharpness in DMD-based scanning maskless lithography using optical proximity correction and genetic algorithm

Chao-Li Weng,Chun-Ying Wu,Yung-Chun Lee

DOI: https://doi.org/10.1364/oe.544253

IF: 3.8

2024-11-29

Optics Express

Abstract:Chao-Li Weng, Chun-Ying Wu, Yung-Chun Lee An optical proximity correction (OPC) method is proposed to enhance the UV patterning quality in a DMD-based scanning-type maskless ... [Opt. Express 32, 45357-45372 (2024)]

optics
Angle Position Monitoring Technology of Micro-mirror Array for Freeform Illumination Module in Immersion Lithography

Ma Xiaozhe,Zhang Fang,Zeng Zongshun,Zhu Siyu,Zeng Aijun,Huang Huijie

DOI: https://doi.org/10.1117/12.2501223

2018-01-01

Abstract:In the 28nm and below nodes lithography machine, the freeform pupil illumination has been widely used with the application of source mask optimization technology. As one of the most important implementations, the freeform illumination module is equipped with micro-mirror array (MMA), which can generate arbitrary pupil by adjusting angle position of individual mirrors. It is necessary to monitor the angle position of MMA real time for its significant function. However, there are several difficulties in the monitoring: 1) The monitoring unit could not disturb the working light path. This determines that the monitoring light should be glancing incident onto the micro-mirror; 2) The size of micro-mirror is relative small, and its rotation angle range is relative large in two dimensions; 3) There are several thousands of micro-mirrors. The crosstalk should be avoided in the monitoring method. In order to find a suitable monitoring method, the imaging and Fourier transform methods are studied. In the imaging method, the reticle is imaged onto the detector with the reflection of a single micro-mirror. The center of the reticle image is calculated to represent the angle position. In the Fourier transform method, the angular distribution of the light reflected by the micro-mirror is detected. And the angular distribution centroid is used to evaluate the angle position. In order to verify the feasibility and compare the performance of the two methods, the influences of alignment error and the scattered light are analyzed. The simulation results show that the Fourier transform method is insensitive to the scattered light and is independent to the relative position of the micro-mirror and Fourier transform lens.

High efficiency regulation method to generate an illumination source by adopting the micromirror array in DUV lithography

Compact Ultraviolet Light-Emitting Diode-Based Lithography Illumination System with Tunable Coherent Factor

Light and Matter Co-Confined Multi-Photon Lithography

Single-color Peripheral Photoinhibition Lithography of Nanophotonic Structures

Maskless photolithography based on ultraviolet micro-LEDs and direct writing method for improving pattern resolution

Design And Simulation Of Double Annular Illumination Mode For Micro-Lithography

Can we improve the energy efficiency of EUV lithography?

Optimization design of irradiance array for LED uniform rectangular illumination.

Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

High Performance Source Optimization Using A Gradient-Based Method in Optical Lithography

High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography

Angle monitor of micromirror array for freeform illumination in lithography systems

Gradient-Based Source And Mask Optimization In Optical Lithography

DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography

Parallel two-photon lithography achieving uniform sub-200 nm features with thousands of individually controlled foci

Linearized EUV mask optimization based on the adjoint method

Mask structure optimization for beyond EUV lithography

Development of a Lithography Simulation Tool Set in Various Optical Conditions for Source Mask Optimization

Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures

Enhanced corner sharpness in DMD-based scanning maskless lithography using optical proximity correction and genetic algorithm

Angle Position Monitoring Technology of Micro-mirror Array for Freeform Illumination Module in Immersion Lithography