Abstract:Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical properties, making them promising nano-materials for the next-generation electronic systems. A large number of heterostructures have been fabricated by stacking of various 2D materials to achieve different functionalities. In this work, we simulate the electron transport properties of a three-terminal multilayer heterostructure made from graphene nanoribbons vertically sandwiching a boron nitride tunneling barrier. To investigate the effects of the unavoidable misalignment in experiments, we introduce a tunable angular misorientation between 2D layers to the modeled system. Current-Voltage (I-V) characteristics of the device exhibit multiple NDR peaks originating from distinct mechanisms. A unique NDR mechanism arising from the lattice mismatch is captured and it depends on both the twisting angle and voltage bias. Analytical expressions for the positions of the resonant peaks observed in I-V characteristic are developed. To capture the slight degradation of PVR ratios observed in experiments when temperature increases from 2K to 300K, electron-photon scattering decoherence has been added to the simulation, indicating a good agreement with experiment works as well as a robust preservation of resonant tunneling feature.

Graphene nanoribbon resonant tunneling diode with dual connection between contacts

Design of bilayer graphene nanoribbon tunnel field effect transistor

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

First principles design of divacancy defected graphene nanoribbon based rectifying and negative differential resistance device

Graphene Nanoribbon As A Negative Differential Resistance Device

Resonant Tunneling Through Double-Bended Graphene Nanoribbons

Negative Differential Resistances in Graphene Double Barrier Resonant Tunneling Diodes

Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

Double ferromagnetic barriers resonant tunneling diodes (RTD) based on the surface of a topological insulator

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New methods to increase PVR in gate controllable armchair graphene-boron nitride RTDs

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Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Negative Differential Resistance in Parallel Single-Walled Carbon Nanotube Contacts

Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

Negative Differential Resistance and Rectification Effects in Step-Like Graphene Nanoribbons

Nonlinear Transport through ultra-narrow Zigzag Graphene Nanoribbons: non-equilibrium charge and bond currents

Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Three-terminal graphene negative differential resistance devices.