Oxygen Vacancy Induced Ferromagnetism in V$_2$O$_{5-x}$

Zhi Ren Xiao,Guang Yu Guo,Po Han Lee,Hua Shu Hsu,Jung Chun Andrew Huang

DOI: https://doi.org/10.48550/arXiv.0802.1313

2008-02-10

Materials Science

Abstract:{\it Ab initio} calculations within density functional theory with generalized gradient approximation have been performed to study the effects of oxygen vacancies on the electronic structure and magnetism in undoped V$_2$O$_{5-x}$ ($0 < x < 0.5$). It is found that the introduction of oxygen vacancies would induce ferromagnetism in V$_2$O$_{5-x}$ with the magnetization being proportional to the O vacancy concentration $x$. The calculated electronic structure reveals that the valence electrons released by the introduction of oxygen vacancies would occupy mainly the neighboring V $d_{xy}$-dominant band which then becomes spin-polarized due to intra-atomic exchange interaction, thereby giving rise to the half-metallic ferromagnetism.