A 1.58nJ/conversion temperature-to-digital converter with low power variations

Mao-Wei Lee,Hongchin Lin,Po-Wei Lai,Ching-Hsiang Chang,Yao-Ting Jian
DOI: https://doi.org/10.35848/1347-4065/ad2bba
IF: 1.5
2024-02-21
Japanese Journal of Applied Physics
Abstract:Abstract A 1.58nJ/conversion temperature-to-digital converter at the supply voltage of 0.7 V was designed and fabricated on the die area of 0.147 mm^2 using the 90nm CMOS technology. The sub-nA constant reference current (I_ref) and the sub-nA complementary-to-absolute temperature (CTAT) current (I_CTAT) are generated by employing the gate leakage currents of PMOSFETs. The current-to-frequency oscillators (CFOs) using those currents followed by the frequency-to-digital converter (FDC) are used to produce the digital codes inversely proportional to temperatures. With this approach, the power consumption at high temperatures can be alleviated significantly. Thus, the variation of power consumption is only 70% from -10oC to 90oC. The conversion time is 107 ms at the room temperature and the noise non-limited resolution is 0.052oC.
physics, applied
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