Abstract:Photonic switches have attractive application prospects in optical communication data networks that require dynamic reconfiguration. Integrating optical switching devices with optical fiber, the most widely deployed photonic technology platform, can realize signal transmission and processing in practical applications. Here, we demonstrate the multilevel optical switching using the phase-change material Ge2Sb2Te5 (GST) integrated on a graded-index multimode fiber. This switching process works by exploiting the significant difference in extinction coefficient between the crystalline state and the amorphous state of the GST. Using GST to achieve the switch function, no external energy source is needed to maintain the existing state of the switch, and the device is nonvolatile. This multi-level optical switch is an all-fiber integrated device. We apply GST to the end facets of the graded-index multimode fiber by magnetron sputtering, which is a reflective structure. A pulsing scheme is used to control the optical propagation state of the optical modulation signal to realize the switching function. It can store up to 11 non-volatile reliable and repeatable levels encoded by the pump source laser with a wavelength of 1550 nm. At the same time, the switching process between states is on the order of hundreds of nanoseconds. The present experimental results demonstrate the feasibility of 11 multilevel states in the field of optical fibers commonly used in communications. It can be well coupled with the all-fiber terminal device. It also shows that the device is still applicable in the 1525 nm∼1610 nm broadband range, promising for designing future multilevel photonic switches and memory devices.

Exploring the potential of a bismuth-erbium-vanadium co-doped optical fiber as a stable Q-switcher in the 1550??nm region

All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

Q-switched pulse generation by stimulated Brillouin scattering assisted four-wave mixing effect in erbium–bismuth co-doped multi-elements silica glass based optical fiber laser

Dual-wavelength all-fiber Q-switched fiber laser using bismuth-doped fiber as saturable absorber

Passively Q-switched erbium-doped fiber laser based on two-dimensional boron carbide nanoparticles as saturable absorber

Bismuth-doped fiber amplifier based on a linear cavity double pass structure operating in the O?+?E band

Toward an ultra-broadband emission source based on the bismuth and erbium co-doped optical fiber and a single 830nm laser diode pump.

Stable Broadband Fiber-Coupled Near Infrared Light Sources Based on a Bismuth Heavily Doped Aluminosilicate Optical Fiber

980-nm Q-switched photonic crystal fiber laser by MoS 2 saturable absorber

Topological insulator: Bi2Se3/polyvinyl alcohol film-assisted multi-wavelength ultrafast erbium-doped fiber laser

A 23-dB bismuth-doped optical fiber amplifier for a 1700-nm band

Few-layer bismuthene for femtosecond soliton molecules generation in Er-doped fiber laser

Experimental study on activating bismuth active centers in bismuth/erbium co-doped optical fiber by ionizing radiations

High-Quantum-Efficiency Erbium-Doped Optical Fiber and the Effective Deactivator

Amplified Spontaneous emission from optical fibers containing anisotropic morphology CdSe/CdS quantum dots under CW excitation

E- and S-band Bismuth-Doped Fiber Amplifier

Q-switching pulse generation in multi-wavelength Brillouin Erbium-doped Fiber laser

CuCrO2 nanoparticles-polyimide films as saturable absorber for improving the output characteristics of passively Q-switched in ytterbium doped fiber lasers

Passively Q-switched and mode-locking fiber laser based on Sb2S3 saturable absorber

Bimetallic solid solution MAX phase Ti 2 NbAlC 2 as saturable absorber for passively Q-switched Er 3+ -doped fiber laser

Bandwidth extension to 1627 nm of over 20 dB gain in an erbium-doped silica fiber via two-photon absorption