Abstract:An anion hybridization strategy to construct Bisumth (Bi)‐doped photonic materials with intense optical response and low processing temperature is proposed. The Bi‐doped photonic glass after anion hybridization exhibits lower transition temperature and stronger broadband NIR luminescence. The potential of Bi‐active hybridized photonic materials for broadband optical amplification is further demonstrated. Given the ever‐increasing demand for transmission capacity in optical fiber communication systems, there is a growing focus on developing active fibers and devices with an optical response across a wider spectrum. Bismuth (Bi)‐doped photonic glasses have attracted significant interest for their exceptional ultra‐broadband optical response, particularly within telecommunication bands. However, developing advanced Bi‐activated materials with robust optical response, high compatibility with commercial transmission systems, and low processing temperature remains a huge challenge. Herein, an anion hybridization strategy is proposed to overcome the aforementioned limitations. The anion hybridization significantly enhances the broadband optical response (≈10 times) of the Bi center following the introduction of fluorine ions, and reduces the transition temperature of the photonic glass (≈200 °C). Moreover, the near‐infrared optical response bandwidth experiences significant broadening, a result attributed to the larger inhomogeneous broadening. Furthermore, successful fabrication of the anion‐hybridized Bi‐activated glass fiber is achieved, demonstrating excellent compatibility with commercial transmission fibers. Additionally, the fabricated fiber exhibits an amplified spontaneous emission and on‐off gain across a broad waveband, further validating its efficacy. These results indicate that anion hybridization offers an effective strategy to optimize the optical and thermal properties of photonic materials to develop novel advanced photonic devices.

Experimental study on activating bismuth active centers in bismuth/erbium co-doped optical fiber by ionizing radiations

Thermally aggravated photo-bleaching of BAC-Al in bismuth/erbium co-doped optical fiber

Ionizing Radiation Effect upon Er/Yb Co-Doped Fibre Made by In-Situ Nano Solution Doping

Generation and increment of Bi active center in silicate glass based on glass phase separation technology

Generation of Emission Centers for Broadband Nir Luminescence in Bismuthate Glass by Femtosecond Laser Irradiation

Influence of Pre-Radiation and Photo-Bleaching on the Yb-Doped Fiber Laser Radiated with Gamma-ray

Optical properties of bismuth-doped SiO2- or GeO2-based glass core optical fibers

Effects of Electron Irradiation on Optical Properties of Bismuth-Doped Phosphosilicate Fiber

Regulation of Bismuth Valence in Nano-Porous Silica Glass for Near Infrared Ultra-Wideband Optical Amplification

Broadband bismuth-doped fiber amplifiers

Gamma Radiation-Induced Effects over an Optical Fiber Laser: Towards New Sensing Applications

Anion Hybridization for Enhanced Broadband Optical Response in Bi‐Doped Photonic Glass and Fiber

Exploring the potential of a bismuth-erbium-vanadium co-doped optical fiber as a stable Q-switcher in the 1550??nm region

Modulating broadband near infrared emission from Bi doped borate laser glass by codoping nonactive rare earth ions

Thermal behavior of NIR active centers in Bi-doped optical fibers

Stable Broadband Fiber-Coupled Near Infrared Light Sources Based on a Bismuth Heavily Doped Aluminosilicate Optical Fiber

Homogeneity of Bismuth-Distribution in Bismuth-Doped Alkali Germanate Laser Glasses Towards Superbroad Fiber Amplifiers.

Fluorescence Emission Centres and the Corresponding Infrared Fluorescence Saturation in a Bismuth-Doped Silica Fibre

Ultra‐Broadband Emission in Bi/Ge Co‐Doped Silica Glass and Fiber via Bismuth Coordination Engineering

Recent Advances in Bismuth Activated Photonic Materials

Formation of E-band luminescence-active centers in bismuth-doped silica fiber via atomic layer deposition